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SSM3K36MFV-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction:**
SSM3K36MFV-VB is a high-performance, low-power N-type MOSFET in a SOT723-3 package, designed for small, low-power applications. With a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 0.65A, this MOSFET is suitable for circuits that require low voltage and high switching efficiency. Its threshold voltage (Vth) is 0.45V, which allows it to be turned on at a lower gate voltage, making it particularly suitable for low-power devices and compact circuit designs.
SSM3K36MFV-VB uses Trench technology to provide low on-resistance, especially at higher gate voltages (such as 10V), which can significantly reduce power losses and improve circuit efficiency. The characteristics of this MOSFET make it ideal for applications such as mobile devices, sensors, and LED drivers, while its small package size gives it an advantage in space-constrained designs.
SSM3K36MFV-VB is a high-performance, low-power N-type MOSFET in a SOT723-3 package, designed for small, low-power applications. With a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 0.65A, this MOSFET is suitable for circuits that require low voltage and high switching efficiency. Its threshold voltage (Vth) is 0.45V, which allows it to be turned on at a lower gate voltage, making it particularly suitable for low-power devices and compact circuit designs.
SSM3K36MFV-VB uses Trench technology to provide low on-resistance, especially at higher gate voltages (such as 10V), which can significantly reduce power losses and improve circuit efficiency. The characteristics of this MOSFET make it ideal for applications such as mobile devices, sensors, and LED drivers, while its small package size gives it an advantage in space-constrained designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
2. **Detailed parameter description:**
- **Model**: SSM3K36MFV-VB
- **Package type**: SOT723-3
- **Configuration**: Single-channel N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ (at VGS = 4.5V)
- 270mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench (trench technology)
- **Model**: SSM3K36MFV-VB
- **Package type**: SOT723-3
- **Configuration**: Single-channel N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ (at VGS = 4.5V)
- 270mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench (trench technology)
Domain and module applications：
3. **Application fields and module examples:**
#### （1）**Portable electronic devices**
Due to its small SOT723-3 package, the SSM3K36MFV-VB is particularly suitable for use in space-constrained portable electronic devices. For example, it can be used in devices such as smart watches, wireless headphones, and mobile sensors. These devices usually have high requirements for size, power efficiency, and battery life, and this MOSFET provides an efficient power management solution.
#### （2）**Low-power power management**
The SSM3K36MFV-VB is ideal for low-power power management systems, especially for low-voltage power conversion and load control. In such applications, it can help achieve precise control of voltage and current to maximize power efficiency. For power management of portable and wireless devices, the low on-resistance and fast switching characteristics of this MOSFET are very suitable.
#### （3） **LED driver circuits**
This MOSFET is also suitable for low-power LED driver circuits, especially in applications that require compact packaging and efficient power conversion. The SSM3K36MFV-VB can be used as an efficient switching element to control the flow of current in LED lighting systems, thereby improving energy efficiency and extending the life of the LED.
#### （4） **Sensor circuits**
Due to its low power consumption and high efficiency, the SSM3K36MFV-VB is also widely used in sensor circuits. Whether in temperature sensors, motion sensors, or environmental monitoring equipment, this MOSFET can provide fast response and reduce energy loss. It is ideal for sensor systems that require precise current control and fast switching, especially in battery-powered devices.
#### （5） **Logic level conversion**
The SSM3K36MFV-VB also performs well in circuits that require level conversion. It can convert signals from low-voltage logic to signals suitable for high-voltage devices, thereby ensuring stable signal transmission. The fast switching performance and low on-resistance of this MOSFET make it an ideal choice when communicating data between microcontrollers and peripheral devices.
#### (6) **Wireless Communication Module**
Wireless communication modules usually require stable, low-power power management solutions. SSM3K36MFV-VB can be used for power regulation of wireless communication equipment. It can effectively control current and reduce power loss, improving the overall performance of the system, especially in low-power wireless transmission and reception modules.
### Summary:
SSM3K36MFV-VB is a small, efficient, low-power N-type MOSFET suitable for low-voltage and low-current applications, especially in space-constrained and battery-powered devices. Its low on-resistance and fast switching characteristics make it an ideal choice for portable electronic devices, power management, LED drivers, sensor circuits and other fields. Whether in battery management, LED control, or communication modules that require fast response, the SSM3K36MFV-VB provides excellent performance to meet the needs of a variety of modern electronic devices.
#### （1）**Portable electronic devices**
Due to its small SOT723-3 package, the SSM3K36MFV-VB is particularly suitable for use in space-constrained portable electronic devices. For example, it can be used in devices such as smart watches, wireless headphones, and mobile sensors. These devices usually have high requirements for size, power efficiency, and battery life, and this MOSFET provides an efficient power management solution.
#### （2）**Low-power power management**
The SSM3K36MFV-VB is ideal for low-power power management systems, especially for low-voltage power conversion and load control. In such applications, it can help achieve precise control of voltage and current to maximize power efficiency. For power management of portable and wireless devices, the low on-resistance and fast switching characteristics of this MOSFET are very suitable.
#### （3） **LED driver circuits**
This MOSFET is also suitable for low-power LED driver circuits, especially in applications that require compact packaging and efficient power conversion. The SSM3K36MFV-VB can be used as an efficient switching element to control the flow of current in LED lighting systems, thereby improving energy efficiency and extending the life of the LED.
#### （4） **Sensor circuits**
Due to its low power consumption and high efficiency, the SSM3K36MFV-VB is also widely used in sensor circuits. Whether in temperature sensors, motion sensors, or environmental monitoring equipment, this MOSFET can provide fast response and reduce energy loss. It is ideal for sensor systems that require precise current control and fast switching, especially in battery-powered devices.
#### （5） **Logic level conversion**
The SSM3K36MFV-VB also performs well in circuits that require level conversion. It can convert signals from low-voltage logic to signals suitable for high-voltage devices, thereby ensuring stable signal transmission. The fast switching performance and low on-resistance of this MOSFET make it an ideal choice when communicating data between microcontrollers and peripheral devices.
#### (6) **Wireless Communication Module**
Wireless communication modules usually require stable, low-power power management solutions. SSM3K36MFV-VB can be used for power regulation of wireless communication equipment. It can effectively control current and reduce power loss, improving the overall performance of the system, especially in low-power wireless transmission and reception modules.
### Summary:
SSM3K36MFV-VB is a small, efficient, low-power N-type MOSFET suitable for low-voltage and low-current applications, especially in space-constrained and battery-powered devices. Its low on-resistance and fast switching characteristics make it an ideal choice for portable electronic devices, power management, LED drivers, sensor circuits and other fields. Whether in battery management, LED control, or communication modules that require fast response, the SSM3K36MFV-VB provides excellent performance to meet the needs of a variety of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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