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SSM3K16TE-VB Product details
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Product Introduction
**SSM3K16TE-VB** is a high-efficiency, low-voltage single N-type MOSFET in a small package SOT723-3, designed for low-power applications. This MOSFET has a maximum drain-source voltage (V_DS) of 20V and a maximum drain current (I_D) of 0.65A, suitable for low-voltage and low-power systems. Its low on-resistance (R_DS(ON)) characteristic enables it to perform well at different gate-source voltages (V_GS), especially at a gate-source voltage of 10V, the on-resistance is 270mΩ, which significantly reduces power loss and improves system efficiency. The SSM3K16TE-VB uses Trench technology and has a lower threshold voltage (V_th), which enables it to work efficiently even under low-voltage drive, making it very suitable for battery-powered devices, power management systems, load switches and other occasions.
**SSM3K16TE-VB** is a high-efficiency, low-voltage single N-type MOSFET in a small package SOT723-3, designed for low-power applications. This MOSFET has a maximum drain-source voltage (V_DS) of 20V and a maximum drain current (I_D) of 0.65A, suitable for low-voltage and low-power systems. Its low on-resistance (R_DS(ON)) characteristic enables it to perform well at different gate-source voltages (V_GS), especially at a gate-source voltage of 10V, the on-resistance is 270mΩ, which significantly reduces power loss and improves system efficiency. The SSM3K16TE-VB uses Trench technology and has a lower threshold voltage (V_th), which enables it to work efficiently even under low-voltage drive, making it very suitable for battery-powered devices, power management systems, load switches and other occasions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
Detailed parameter description
- **Package type**: SOT723-3
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.45V
- **On-resistance (R_DS(ON))**:
- 337.5mΩ @ V_GS = 4.5V
- 270mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 0.65A
- **Technology**: Trench
- **Package type**: SOT723-3
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.45V
- **On-resistance (R_DS(ON))**:
- 337.5mΩ @ V_GS = 4.5V
- 270mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 0.65A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Low-power battery-powered devices**
Due to its low gate-source voltage and low on-resistance, the SSM3K16TE-VB is ideal for battery-powered devices such as portable electronic devices, wireless sensors, wearable devices, etc. In these applications, the MOSFET can be used as a power management and load switching element to help reduce power consumption and effectively extend battery life. Its low threshold voltage and efficient switching characteristics give it a significant energy efficiency advantage in battery-driven devices.
2. **Power management system**
The SSM3K16TE-VB is suitable for low-power power management modules, especially in situations where efficient current switching is required, such as in DC-DC converters, low-voltage power modules, and battery charging management systems. In these applications, the MOSFET can efficiently control current flow, reduce power losses, and improve the energy efficiency and stability of the entire system.
3. **Load switch control**
In low voltage environments, the SSM3K16TE-VB can be used as a load switch control element to help achieve efficient power switching. For example, in low-power consumer electronic devices, portable power modules, and low-power sensors, the SSM3K16TE-VB can effectively control the on and off of the load, optimize system performance, and extend the life of the device.
4. **Analog signal switch**
Due to its low on-resistance and excellent switching performance, the SSM3K16TE-VB is also suitable for analog signal switching applications, such as in audio equipment, wireless communication equipment, and sensor modules as a low-power signal switch. These applications require high signal transmission quality and stability under the premise of low power consumption, and the SSM3K16TE-VB can effectively meet these requirements.
5. **Integrated circuits and low-power integrated systems**
In integrated circuit (IC) design, the SSM3K16TE-VB can be used in power management modules and signal switch modules. Its small SOT723-3 package makes it suitable for compact electronic systems, especially in applications that require small size and high efficiency, and can provide ideal power switching and control performance.
6. **Smart Home and Internet of Things (IoT)**
This MOSFET is also very suitable for smart home devices and IoT applications, such as smart lighting control, environmental monitoring equipment, etc. These devices usually require efficient power management and low power operation. The high efficiency of SSM3K16TE-VB can optimize the battery life of the device and ensure continuous and stable performance.
1. **Low-power battery-powered devices**
Due to its low gate-source voltage and low on-resistance, the SSM3K16TE-VB is ideal for battery-powered devices such as portable electronic devices, wireless sensors, wearable devices, etc. In these applications, the MOSFET can be used as a power management and load switching element to help reduce power consumption and effectively extend battery life. Its low threshold voltage and efficient switching characteristics give it a significant energy efficiency advantage in battery-driven devices.
2. **Power management system**
The SSM3K16TE-VB is suitable for low-power power management modules, especially in situations where efficient current switching is required, such as in DC-DC converters, low-voltage power modules, and battery charging management systems. In these applications, the MOSFET can efficiently control current flow, reduce power losses, and improve the energy efficiency and stability of the entire system.
3. **Load switch control**
In low voltage environments, the SSM3K16TE-VB can be used as a load switch control element to help achieve efficient power switching. For example, in low-power consumer electronic devices, portable power modules, and low-power sensors, the SSM3K16TE-VB can effectively control the on and off of the load, optimize system performance, and extend the life of the device.
4. **Analog signal switch**
Due to its low on-resistance and excellent switching performance, the SSM3K16TE-VB is also suitable for analog signal switching applications, such as in audio equipment, wireless communication equipment, and sensor modules as a low-power signal switch. These applications require high signal transmission quality and stability under the premise of low power consumption, and the SSM3K16TE-VB can effectively meet these requirements.
5. **Integrated circuits and low-power integrated systems**
In integrated circuit (IC) design, the SSM3K16TE-VB can be used in power management modules and signal switch modules. Its small SOT723-3 package makes it suitable for compact electronic systems, especially in applications that require small size and high efficiency, and can provide ideal power switching and control performance.
6. **Smart Home and Internet of Things (IoT)**
This MOSFET is also very suitable for smart home devices and IoT applications, such as smart lighting control, environmental monitoring equipment, etc. These devices usually require efficient power management and low power operation. The high efficiency of SSM3K16TE-VB can optimize the battery life of the device and ensure continuous and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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