Product introduction：
**SSM3K15FU-VB MOSFET Product Introduction**
SSM3K15FU-VB is an N-Channel MOSFET in SC70-3 package, designed for low power applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium and low voltage power management and switching circuits. Its higher on-resistance (RDS(ON)) is 4000mΩ (VGS=4.5V) and 2000mΩ (VGS=10V), respectively, with good cost performance. When the gate-source voltage is 10V, this MOSFET can provide a maximum leakage current (ID) of 0.3A, which is suitable for low power load switching and power regulation applications.
The turn-on voltage (Vth) of this MOSFET is 1.7V, which can be effectively turned on at a lower gate voltage, suitable for circuits that require low gate voltage drive, and uses Trench technology to provide lower on-resistance and faster switching characteristics. The SSM3K15FU-VB is suitable for applications requiring small size, high switching speed and medium power control.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-N |
60V |
|
1.7V |
0.3A |
|
|
2000mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-N |
60V |
|
1.7V |
0.3A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-N |
60V |
|
1.7V |
0.3A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-N |
|
|
|
|
|
|
|
**SSM3K15FU-VB MOSFET detailed parameter description**
- **Package**: SC70-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4000mΩ (at VGS=4.5V)
- 2000mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
- **Maximum power loss (Pd)**: Depending on the temperature and current conditions of the working environment, the typical power loss is low (the specific value needs to be calculated based on the actual working conditions)
- **Junction temperature (Tj)**: Maximum 150°C
- **Vibration resistance**: In line with industry standards, with good thermal stability and vibration resistance.
Domain and module applications：
**Application fields and modules**
1. **Low power management**:
SSM3K15FU-VB is suitable for low power power management applications, especially in lower voltage power regulation and conversion circuits. Its maximum drain-source voltage is 60V, suitable for 5V and 12V power systems, and widely used in smart phones, wearable devices and portable electronic products.
2. **Load switch and battery management**:
Due to its low gate voltage startup characteristics (Vth=1.7V), SSM3K15FU-VB is very suitable for load switch applications in battery management systems. It can control the battery charging and discharging process, reduce power loss, and extend battery life. It is particularly suitable for low-power sensors, portable devices and wireless communication devices.
3. **Small DC-DC converter**:
SSM3K15FU-VB can be used as a switching element in a small DC-DC converter, especially in situations where efficient switching and low power consumption are required. Its lower on-resistance can reduce switching losses and is suitable for efficient conversion in the voltage range of 5V to 12V, suitable for chargers, mobile power supplies, and LED drive circuits.
4. **Low-power switching circuits**:
This MOSFET can be used in low-power switching circuits, especially for operation at high frequencies. Due to its lower RDS(ON), it can effectively reduce power losses and improve the overall efficiency of the system, and is widely used in regulation circuits and load switches.
5. **Consumer electronics**:
In consumer electronics, SSM3K15FU-VB can be used for applications such as power switching, interface circuits, and load control. It is suitable for use in small electronic devices such as wireless headphones, Bluetooth speakers, and smart homes, and can effectively optimize power management and reduce system energy consumption.
6. **Smart home and IoT devices**:
This MOSFET is particularly suitable for smart home and IoT devices due to its small size and low power consumption. It can be used in smart sensors, wireless control modules, battery-powered home automation systems, etc. to ensure efficient operation of the equipment and extend battery life.
7. **Battery-powered sensors and remote control systems**:
SSM3K15FU-VB has significant advantages in the application of low-power sensors and remote control systems. It can provide precise power control and reduce standby power consumption, making it an ideal switching element in battery-powered sensors and low-power remote controls.
8. **LED drive circuit**:
In the LED drive circuit, SSM3K15FU-VB can provide precise switching control to ensure the stability of the LED, especially for low-power lighting equipment. Due to its low on-resistance, it can effectively improve energy conversion efficiency and reduce heat generation, making it suitable for home lighting, vehicle lighting and decorative lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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