Product introduction:
1. **Product Introduction:**
SSM3K131TU-VB is a high-performance, small N-type MOSFET designed in SC70-3 package for low-voltage, high-performance applications. Its maximum drain-source voltage (VDS) is 20V and its maximum drain current (ID) is 4A, which is suitable for low-power circuits and space-limited applications. The threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, which enables it to turn on at a lower gate voltage and has fast switching characteristics. SSM3K131TU-VB uses Trench technology to provide low on-resistance, especially at higher gate voltages (36mΩ @ VGS = 10V), which can effectively reduce power loss and improve system efficiency.
This product performs well in many low-power, high-performance applications, especially for power management, portable devices, and other small electronic devices that require precise current control. Its small size and low power consumption make it very suitable for circuit designs that require high efficiency and occupy very little space.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
48mΩ |
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-N |
|
|
|
|
|
|
|
2. **Detailed parameter description:**
- **Model**: SSM3K131TU-VB
- **Package type**: SC70-3
- **Configuration**: Single-channel N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 48mΩ (at VGS = 2.5V)
- 40mΩ (at VGS = 4.5V)
- 36mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 4A
- **Technology**: Trench (trench technology)
Domain and module applications:
#**Application fields and module examples:**
#### (1)**Power Management System**
SSM3K131TU-VB is suitable for low-power power management systems, especially in systems that require high efficiency and low power consumption. For example, in portable battery-powered devices, this MOSFET can be used as a switching element to control the flow of battery current, helping to improve the system's energy efficiency and extend battery life. Its low on-resistance and high switching speed are very suitable for use in efficient power conversion modules.
#### (2)**Portable Electronic Devices**
Due to its small SC70-3 package, the SSM3K131TU-VB is very suitable for use in portable electronic devices such as smart watches, health trackers, Bluetooth headsets, etc. These devices usually have high requirements for battery life and size, and the low power consumption and compact package of this MOSFET make it an ideal choice. It can provide high-efficiency power conversion and ensure stable operation of the device for a long time.
#### (3)**Load switch and drive circuit**
In the load switch circuit, SSM3K131TU-VB can be used as an efficient switching element to control the start and stop of the load. It is suitable for various low-power drive circuits, such as LED drive, power tool drive, etc. Its low on-resistance and high switching speed enable it to effectively control the load current, reduce power loss, and ensure system efficiency.
#### (4)**Logic level conversion circuit**
In a variety of electronic devices, SSM3K131TU-VB can be used as a logic level converter, especially in low-voltage systems and embedded applications. In such applications, MOSFET can convert signals between different voltage levels to ensure accurate signal transmission, which is particularly suitable for communication between microcontrollers and other peripherals.
#### (5)**LED drive circuit**
This MOSFET is suitable for driving low-power LED devices such as desk lamps, backlight displays, and indicator lights. Its low on-resistance and high switching efficiency help reduce power loss and improve system efficiency, thereby enhancing the overall performance of the LED driver circuit.
#### (6) **Battery protection circuit**
In the battery protection circuit, the SSM3K131TU-VB acts as a switching element to help control the battery charging and discharging process. Its low on-resistance can effectively reduce energy loss and improve battery efficiency, and is particularly suitable for battery management systems in applications such as smartphones and wearable devices.
### Summary:
The SSM3K131TU-VB is a high-efficiency, low-power N-type MOSFET that is particularly suitable for applications that require low voltage and high switching speed. Its low on-resistance and small package make it excellent in power management, portable devices, load switches, battery protection, and LED driving. Whether it is a low-power power supply, battery-driven equipment, or logic level conversion and load control applications, this MOSFET can provide excellent performance to help achieve high-efficiency, low-energy circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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