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SSM3K04FV-VB Product details
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**SSM3K04FV-VB MOSFET Product Introduction**
SSM3K04FV-VB is a high-performance N-Channel MOSFET in SOT723-3 package, designed for low voltage and high efficiency applications. It has a low on-resistance (RDS(ON)), which is 337.5mΩ (at VGS=4.5V) and 270mΩ (at VGS=10V), which can effectively reduce power loss and improve system efficiency. Its maximum drain-source voltage (VDS) is 20V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low voltage power management and low power switch control circuits.
The turn-on voltage (Vth) of SSM3K04FV-VB is 0.45V, and the maximum drain current (ID) is 0.65A, which is suitable for low power consumption and high efficiency power management applications. The MOSFET uses Trench technology, which offers lower switching losses and higher power density, making it ideal for space-constrained and power-sensitive applications.
SSM3K04FV-VB is a high-performance N-Channel MOSFET in SOT723-3 package, designed for low voltage and high efficiency applications. It has a low on-resistance (RDS(ON)), which is 337.5mΩ (at VGS=4.5V) and 270mΩ (at VGS=10V), which can effectively reduce power loss and improve system efficiency. Its maximum drain-source voltage (VDS) is 20V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low voltage power management and low power switch control circuits.
The turn-on voltage (Vth) of SSM3K04FV-VB is 0.45V, and the maximum drain current (ID) is 0.65A, which is suitable for low power consumption and high efficiency power management applications. The MOSFET uses Trench technology, which offers lower switching losses and higher power density, making it ideal for space-constrained and power-sensitive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
**SSM3K04FV-VB MOSFET detailed parameter description**
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ (at VGS=4.5V)
- 270mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench
- **Maximum power loss (Pd)**: Depending on the temperature and current conditions of the working environment, the typical power loss is low (the specific value needs to be calculated based on the actual working conditions)
- **Junction temperature (Tj)**: Maximum 150°C
- **Vibration resistance**: In line with industry standards, with good thermal stability and vibration resistance.
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ (at VGS=4.5V)
- 270mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench
- **Maximum power loss (Pd)**: Depending on the temperature and current conditions of the working environment, the typical power loss is low (the specific value needs to be calculated based on the actual working conditions)
- **Junction temperature (Tj)**: Maximum 150°C
- **Vibration resistance**: In line with industry standards, with good thermal stability and vibration resistance.
Domain and module applications：
**Application fields and modules**
1. **Low-power power management**:
SSM3K04FV-VB is suitable for low-voltage power management circuits, especially in 3.3V, 5V or 12V systems, and can work stably at lower gate-source voltages. Due to its low on-resistance, it can effectively improve the power conversion efficiency and is widely used in low-power power modules, mobile device power supplies, etc.
2. **Load switch**:
This MOSFET can be used in low-power load switch applications to control the start and stop of small power supplies and devices. It is suitable for switch control in small electronic devices such as smart sensors, low-power microcontrollers and battery-powered portable devices.
3. **Battery-powered applications**:
In battery-driven devices, SSM3K04FV-VB can be used as a switching element in the battery management system to help achieve efficient battery charge and discharge management. Its low on-resistance ensures lower power consumption and extends the battery life, making it suitable for wireless sensors, Bluetooth devices and smart wearable devices.
4. **DC-DC Converters**:
Due to its low RDS(ON) value, the SSM3K04FV-VB performs very well in small DC-DC converters. It can provide excellent efficiency in low-voltage, high-efficiency conversion as a switching element, suitable for small power adapters, mobile power supplies and battery charging circuits.
5. **LED Drive Circuit**:
This MOSFET can be used as a switching element in LED drive circuits to accurately control current and ensure LED stability. Its low on-resistance helps reduce power loss and improve energy efficiency, making it ideal for applications in low-power lighting systems.
6. **Smart Home and IoT Devices**:
The SSM3K04FV-VB is particularly suitable for smart home and Internet of Things (IoT) devices due to its small size and low power consumption. These devices often require efficient power management and long battery life, and the SSM3K04FV-VB can provide stable current control and efficient power management in these applications.
7. **Sensors and Automation Equipment**:
In automation control and sensor modules, the SSM3K04FV-VB can be used as a switching element to regulate sensor power and optimize the system's power consumption. It is suitable for use in precision sensors, electrical switches, and small automation equipment to ensure stable and reliable operation of the power system.
8. **Overvoltage Protection and Load Switching**:
Due to its low RDS(ON) and low leakage current, the SSM3K04FV-VB can be used in overvoltage protection circuits to help ensure safe and stable operation of electrical systems. It can also be used as a load switcher, which is particularly suitable for space-constrained electrical modules and circuits that require high efficiency.
With the SSM3K04FV-VB, engineers can provide efficient and reliable power management solutions in multiple low-power, low-voltage applications. It is particularly suitable for space-constrained and power-sensitive occasions such as mobile devices, wireless communications, LED driver circuits, smart homes, and other fields.
1. **Low-power power management**:
SSM3K04FV-VB is suitable for low-voltage power management circuits, especially in 3.3V, 5V or 12V systems, and can work stably at lower gate-source voltages. Due to its low on-resistance, it can effectively improve the power conversion efficiency and is widely used in low-power power modules, mobile device power supplies, etc.
2. **Load switch**:
This MOSFET can be used in low-power load switch applications to control the start and stop of small power supplies and devices. It is suitable for switch control in small electronic devices such as smart sensors, low-power microcontrollers and battery-powered portable devices.
3. **Battery-powered applications**:
In battery-driven devices, SSM3K04FV-VB can be used as a switching element in the battery management system to help achieve efficient battery charge and discharge management. Its low on-resistance ensures lower power consumption and extends the battery life, making it suitable for wireless sensors, Bluetooth devices and smart wearable devices.
4. **DC-DC Converters**:
Due to its low RDS(ON) value, the SSM3K04FV-VB performs very well in small DC-DC converters. It can provide excellent efficiency in low-voltage, high-efficiency conversion as a switching element, suitable for small power adapters, mobile power supplies and battery charging circuits.
5. **LED Drive Circuit**:
This MOSFET can be used as a switching element in LED drive circuits to accurately control current and ensure LED stability. Its low on-resistance helps reduce power loss and improve energy efficiency, making it ideal for applications in low-power lighting systems.
6. **Smart Home and IoT Devices**:
The SSM3K04FV-VB is particularly suitable for smart home and Internet of Things (IoT) devices due to its small size and low power consumption. These devices often require efficient power management and long battery life, and the SSM3K04FV-VB can provide stable current control and efficient power management in these applications.
7. **Sensors and Automation Equipment**:
In automation control and sensor modules, the SSM3K04FV-VB can be used as a switching element to regulate sensor power and optimize the system's power consumption. It is suitable for use in precision sensors, electrical switches, and small automation equipment to ensure stable and reliable operation of the power system.
8. **Overvoltage Protection and Load Switching**:
Due to its low RDS(ON) and low leakage current, the SSM3K04FV-VB can be used in overvoltage protection circuits to help ensure safe and stable operation of electrical systems. It can also be used as a load switcher, which is particularly suitable for space-constrained electrical modules and circuits that require high efficiency.
With the SSM3K04FV-VB, engineers can provide efficient and reliable power management solutions in multiple low-power, low-voltage applications. It is particularly suitable for space-constrained and power-sensitive occasions such as mobile devices, wireless communications, LED driver circuits, smart homes, and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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