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SSM3K03TE-VB Product details
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**SSM3K03TE-VB MOSFET Product Introduction**
SSM3K03TE-VB is an N-channel MOSFET in a SOT723-3 package, designed for low-voltage, low-power applications, and suitable for applications requiring efficient switching performance and compact size. This MOSFET has a drain-source withstand voltage (Vds) of 20V and a gate-source voltage (Vgs) of ±20V, providing excellent conductivity at low gate drive voltages. The on-resistance (Rds(on)) of the SSM3K03TE-VB is 270mΩ at Vgs=10V, making it suitable for use in low-power switches, power management, electronic control, and portable devices. Its drain current capability of 0.65A can meet the needs of most low-power applications, especially in space-constrained designs.
SSM3K03TE-VB is an N-channel MOSFET in a SOT723-3 package, designed for low-voltage, low-power applications, and suitable for applications requiring efficient switching performance and compact size. This MOSFET has a drain-source withstand voltage (Vds) of 20V and a gate-source voltage (Vgs) of ±20V, providing excellent conductivity at low gate drive voltages. The on-resistance (Rds(on)) of the SSM3K03TE-VB is 270mΩ at Vgs=10V, making it suitable for use in low-power switches, power management, electronic control, and portable devices. Its drain current capability of 0.65A can meet the needs of most low-power applications, especially in space-constrained designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
**SSM3K03TE-VB MOSFET detailed parameter description**
- **Package type**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (Vds)**: 20V
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (Rds(on))**:
- 337.5mΩ @Vgs=4.5V
- 270mΩ @Vgs=10V
- **Drain current (Id)**: 0.65A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: optimized according to application current and operating conditions
- **Switching speed**: suitable for low frequency and low power switching applications
- **Maximum current density**: 0.65A drain current, suitable for low power load switching applications
- **Reliability**: high reliability design, suitable for long-term operation in miniaturized applications
- **Package type**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (Vds)**: 20V
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (Rds(on))**:
- 337.5mΩ @Vgs=4.5V
- 270mΩ @Vgs=10V
- **Drain current (Id)**: 0.65A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: optimized according to application current and operating conditions
- **Switching speed**: suitable for low frequency and low power switching applications
- **Maximum current density**: 0.65A drain current, suitable for low power load switching applications
- **Reliability**: high reliability design, suitable for long-term operation in miniaturized applications
Domain and module applications：
**SSM3K03TE-VB MOSFET application areas and module examples**
1. **Low-power load switch**:
- The low on-resistance and small drain current capability of the SSM3K03TE-VB make it an ideal choice for low-power load switches. In consumer electronics, home appliances, and wireless devices, MOSFETs can be used to control the switching of current and regulate power. Suitable for low-power applications such as wireless sensors, portable devices, remote control switches, etc., it can effectively control the flow of current and improve system efficiency.
2. **Electronic load control**:
- This MOSFET can be used in low-voltage electronic load control, such as in battery management systems for battery-powered devices, to help regulate current during charging and discharging. The SSM3K03TE-VB has a lower Rds(on), which helps reduce power losses, especially in applications with strict requirements on energy efficiency.
3. **Low Voltage Power Management**:
- In low voltage power management modules, the SSM3K03TE-VB MOSFET can be used in applications such as DC-DC converters and linear regulators. Its efficient conduction characteristics optimize the current regulation process, thereby improving power efficiency. In small electronic devices, especially portable devices such as wearable devices and smartphone accessories, MOSFETs can efficiently regulate power and reduce heat accumulation.
4. **LED Driver Power**:
- The SSM3K03TE-VB can also be used in LED driver power modules, especially in low power applications. The low on-resistance of the MOSFET helps improve system efficiency and ensure the brightness stability and life of the LED. It can be used as a switching element to stably control the current in a constant current drive circuit.
5. **Wireless Communication Equipment**:
- In wireless communication equipment, the SSM3K03TE-VB can be used to regulate RF modules, power control, and switches for signal transmission. Due to its compact package and low voltage operation characteristics, it is particularly suitable for wireless communication modules with limited space and low power consumption requirements, such as Bluetooth, Wi-Fi and Zigbee devices.
6. **Automation control system**:
- SSM3K03TE-VB can be used as a switching element in the automation control system to adjust the device state, suitable for low-power switching, relay control and signal conditioning circuits. Its low on-resistance enables it to operate efficiently during current control, suitable for systems such as smart homes, automation sensors, and electronic door locks.
7. **Small battery management system**:
- In the battery management system (BMS), SSM3K03TE-VB can be used for current control during battery charging and discharging. It can efficiently regulate the input and output current of the battery to ensure the safety and efficient operation of the battery system, and is particularly suitable for battery management applications in portable electronic products.
1. **Low-power load switch**:
- The low on-resistance and small drain current capability of the SSM3K03TE-VB make it an ideal choice for low-power load switches. In consumer electronics, home appliances, and wireless devices, MOSFETs can be used to control the switching of current and regulate power. Suitable for low-power applications such as wireless sensors, portable devices, remote control switches, etc., it can effectively control the flow of current and improve system efficiency.
2. **Electronic load control**:
- This MOSFET can be used in low-voltage electronic load control, such as in battery management systems for battery-powered devices, to help regulate current during charging and discharging. The SSM3K03TE-VB has a lower Rds(on), which helps reduce power losses, especially in applications with strict requirements on energy efficiency.
3. **Low Voltage Power Management**:
- In low voltage power management modules, the SSM3K03TE-VB MOSFET can be used in applications such as DC-DC converters and linear regulators. Its efficient conduction characteristics optimize the current regulation process, thereby improving power efficiency. In small electronic devices, especially portable devices such as wearable devices and smartphone accessories, MOSFETs can efficiently regulate power and reduce heat accumulation.
4. **LED Driver Power**:
- The SSM3K03TE-VB can also be used in LED driver power modules, especially in low power applications. The low on-resistance of the MOSFET helps improve system efficiency and ensure the brightness stability and life of the LED. It can be used as a switching element to stably control the current in a constant current drive circuit.
5. **Wireless Communication Equipment**:
- In wireless communication equipment, the SSM3K03TE-VB can be used to regulate RF modules, power control, and switches for signal transmission. Due to its compact package and low voltage operation characteristics, it is particularly suitable for wireless communication modules with limited space and low power consumption requirements, such as Bluetooth, Wi-Fi and Zigbee devices.
6. **Automation control system**:
- SSM3K03TE-VB can be used as a switching element in the automation control system to adjust the device state, suitable for low-power switching, relay control and signal conditioning circuits. Its low on-resistance enables it to operate efficiently during current control, suitable for systems such as smart homes, automation sensors, and electronic door locks.
7. **Small battery management system**:
- In the battery management system (BMS), SSM3K03TE-VB can be used for current control during battery charging and discharging. It can efficiently regulate the input and output current of the battery to ensure the safety and efficient operation of the battery system, and is particularly suitable for battery management applications in portable electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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