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SSM3K03FV-VB Product details
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Product Introduction: SSM3K03FV-VB
SSM3K03FV-VB is a small N-channel MOSFET in a SOT723-3 package, designed for low voltage and low power applications. The MOSFET has a maximum drain-source voltage (V_DS) of 20V and a maximum drain current (I_D) of 0.65A. Its threshold voltage (V_th) is 0.45V, which means it can start to conduct at a lower gate-source voltage. The on-resistance (R_DS(ON)) is 337.5mΩ (V_GS = 4.5V) and 270mΩ (V_GS = 10V), respectively, ensuring low energy loss and efficient switching performance. Using **Trench** technology, the SSM3K03FV-VB has excellent switching speed and low conduction loss, and is suitable for a variety of low-power applications, especially in portable electronic devices, battery management systems, and switching power supplies.
SSM3K03FV-VB is a small N-channel MOSFET in a SOT723-3 package, designed for low voltage and low power applications. The MOSFET has a maximum drain-source voltage (V_DS) of 20V and a maximum drain current (I_D) of 0.65A. Its threshold voltage (V_th) is 0.45V, which means it can start to conduct at a lower gate-source voltage. The on-resistance (R_DS(ON)) is 337.5mΩ (V_GS = 4.5V) and 270mΩ (V_GS = 10V), respectively, ensuring low energy loss and efficient switching performance. Using **Trench** technology, the SSM3K03FV-VB has excellent switching speed and low conduction loss, and is suitable for a variety of low-power applications, especially in portable electronic devices, battery management systems, and switching power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
Detailed parameter description:
- **Model**: SSM3K03FV-VB
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.45V
- **On-resistance (R_DS(ON))**:
- **R_DS(ON)** = 337.5mΩ @ V_GS = 4.5V
- **R_DS(ON)** = 270mΩ @ V_GS = 10V
- **Drain current (I_D)**: 0.65A
- **Maximum power dissipation**: Although the on-resistance is relatively high, this MOSFET performs well in low-power applications and is suitable for designs with limited power consumption.
- **Technology**: Trench
- **Model**: SSM3K03FV-VB
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.45V
- **On-resistance (R_DS(ON))**:
- **R_DS(ON)** = 337.5mΩ @ V_GS = 4.5V
- **R_DS(ON)** = 270mΩ @ V_GS = 10V
- **Drain current (I_D)**: 0.65A
- **Maximum power dissipation**: Although the on-resistance is relatively high, this MOSFET performs well in low-power applications and is suitable for designs with limited power consumption.
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Low-power load switch**
SSM3K03FV-VB is very suitable for low-power load switching applications, such as battery-powered load switching in portable electronics. Its small package and efficient switching characteristics make it very suitable for smart watches, Bluetooth headsets and other wireless devices, providing precise power management in situations where efficient switching and low power consumption are required.
2. **Small battery management system (BMS)**
In the battery management system, SSM3K03FV-VB can be used as a key component for battery charging and discharging control. Its low threshold voltage (V_th = 0.45V) and low on-resistance (270mΩ) enable it to effectively control the charging process and discharge protection of small batteries, and is suitable for battery-powered systems such as handheld devices and smart devices.
3. **LED drive circuit**
In the LED drive circuit, SSM3K03FV-VB can be used for power switching and current regulation. Its low on-resistance makes it an ideal choice for efficient current switching, especially in low-power LED applications such as small LED lighting systems, home automation lighting, display backlighting, etc.
4. **Switching Power Supply (SMPS)**
This MOSFET can be used for efficient switching control in switching power supplies (SMPS), especially in applications where low-power power needs to be switched, such as mobile power supplies, low-power adapters, etc. Due to its low on-resistance, it can significantly reduce power losses and improve the efficiency of the entire power system.
5. **Small Power Tools and Portable Devices**
Due to its small package and low power consumption, the SSM3K03FV-VB is suitable for use in small power tools and portable devices. It can effectively manage the input and output of the power supply, provide reliable power switching functions, and ensure stable operation of the device.
6. **Portable Power Adapter**
This MOSFET is also suitable for portable power adapters, especially those designs that require low power loss and high switching speed. The SSM3K03FV-VB provides efficient current switching and power regulation in low-voltage power adapters, extending battery life.
1. **Low-power load switch**
SSM3K03FV-VB is very suitable for low-power load switching applications, such as battery-powered load switching in portable electronics. Its small package and efficient switching characteristics make it very suitable for smart watches, Bluetooth headsets and other wireless devices, providing precise power management in situations where efficient switching and low power consumption are required.
2. **Small battery management system (BMS)**
In the battery management system, SSM3K03FV-VB can be used as a key component for battery charging and discharging control. Its low threshold voltage (V_th = 0.45V) and low on-resistance (270mΩ) enable it to effectively control the charging process and discharge protection of small batteries, and is suitable for battery-powered systems such as handheld devices and smart devices.
3. **LED drive circuit**
In the LED drive circuit, SSM3K03FV-VB can be used for power switching and current regulation. Its low on-resistance makes it an ideal choice for efficient current switching, especially in low-power LED applications such as small LED lighting systems, home automation lighting, display backlighting, etc.
4. **Switching Power Supply (SMPS)**
This MOSFET can be used for efficient switching control in switching power supplies (SMPS), especially in applications where low-power power needs to be switched, such as mobile power supplies, low-power adapters, etc. Due to its low on-resistance, it can significantly reduce power losses and improve the efficiency of the entire power system.
5. **Small Power Tools and Portable Devices**
Due to its small package and low power consumption, the SSM3K03FV-VB is suitable for use in small power tools and portable devices. It can effectively manage the input and output of the power supply, provide reliable power switching functions, and ensure stable operation of the device.
6. **Portable Power Adapter**
This MOSFET is also suitable for portable power adapters, especially those designs that require low power loss and high switching speed. The SSM3K03FV-VB provides efficient current switching and power regulation in low-voltage power adapters, extending battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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