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SSM3J36MFV-VB Product details
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Product Introduction:
**SSM3J36MFV-VB** is a small, efficient P-channel MOSFET in a **SOT723-3** package, designed for low-voltage, low-power applications. Its maximum drain-source voltage (VDS) is -20V, suitable for power switches, load management, and power regulation circuits that require negative voltage control. This MOSFET is manufactured based on **Trench** technology and has a low on-resistance (**RDS(ON)**) and fast switching performance, providing excellent performance in low-current applications. The maximum drain current (ID) is -0.78A, and it is widely used in low-power electronic devices, battery-powered systems, and small power modules.
**SSM3J36MFV-VB** is a small, efficient P-channel MOSFET in a **SOT723-3** package, designed for low-voltage, low-power applications. Its maximum drain-source voltage (VDS) is -20V, suitable for power switches, load management, and power regulation circuits that require negative voltage control. This MOSFET is manufactured based on **Trench** technology and has a low on-resistance (**RDS(ON)**) and fast switching performance, providing excellent performance in low-current applications. The maximum drain current (ID) is -0.78A, and it is widely used in low-power electronic devices, battery-powered systems, and small power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
Detailed parameter description:
- **Model: ** SSM3J36MFV-VB
- **Package: ** SOT723-3
- **Configuration: ** Single-P-Channel
- **VDS (drain-source voltage): ** -20V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -0.45V
- **RDS(ON) (on-resistance): **
- 456mΩ @ VGS = 4.5V
- 380mΩ @ VGS = 10V
- **ID (drain current): ** -0.78A
- **Technology: ** Trench
- **Maximum power consumption: ** 0.5W (typical)
- **Total gate charge (Qg): ** 3.5nC (typical)
- **Reverse Recovery Time (Trr): ** 25ns (typical)
- **Turn-On/Turn-Off Time: ** Fast response, suitable for high frequency switching applications
- **Maximum Gate-Source Voltage (VGS): ** ±20V
- **Operating Temperature Range: ** -55°C to +150°C
- **Model: ** SSM3J36MFV-VB
- **Package: ** SOT723-3
- **Configuration: ** Single-P-Channel
- **VDS (drain-source voltage): ** -20V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -0.45V
- **RDS(ON) (on-resistance): **
- 456mΩ @ VGS = 4.5V
- 380mΩ @ VGS = 10V
- **ID (drain current): ** -0.78A
- **Technology: ** Trench
- **Maximum power consumption: ** 0.5W (typical)
- **Total gate charge (Qg): ** 3.5nC (typical)
- **Reverse Recovery Time (Trr): ** 25ns (typical)
- **Turn-On/Turn-Off Time: ** Fast response, suitable for high frequency switching applications
- **Maximum Gate-Source Voltage (VGS): ** ±20V
- **Operating Temperature Range: ** -55°C to +150°C
Domain and module applications：
Application fields and modules:
**1. Low-power portable devices: **
SSM3J36MFV-VB is ideal for low-power portable devices, especially for small battery-driven devices such as smart watches, wireless headphones, portable sensors, etc. These devices usually require efficient power management to maximize battery life. The low on-resistance and efficient switching performance of this MOSFET enable it to improve overall operating efficiency under limited battery power.
**2. Power management system: **
This MOSFET can be used in various low-voltage power management systems, especially in applications such as DC-DC converters and LDO (low dropout regulators). In these power modules, SSM3J36MFV-VB can provide efficient power conversion and reduce system power loss and improve power efficiency.
**3. Small load switch: **
SSM3J36MFV-VB can be used as a small load switch for various low-power load control, such as micro motors, electric curtains, LED drivers, etc. Its fast switching performance and low on-resistance make it suitable for use in low-power load environments, enabling efficient load switching and avoiding excessive power loss.
**4. Wireless communication equipment: **
In wireless communication modules, such as Bluetooth, Wi-Fi devices, etc., SSM3J36MFV-VB is also widely used. Its low on-resistance and high switching speed help improve the efficiency of the system, reduce the power consumption of communication equipment, and extend the working time of the equipment.
**5. Sensor interface circuit: **
SSM3J36MFV-VB can be used in sensor interface circuits, especially in battery-powered sensor modules. Its efficient switching characteristics and low on-resistance make it excellent in environments that require precise power control. For example, it can be used in temperature and humidity sensors, electrical sensors, and smart devices.
**6. Small power regulation system: **
This MOSFET is also suitable for small power regulation systems, such as load regulation circuits, power supply selection circuits, etc. It can effectively control the power supply of small current loads, ensure stable operation of the system, and reduce energy waste.
**1. Low-power portable devices: **
SSM3J36MFV-VB is ideal for low-power portable devices, especially for small battery-driven devices such as smart watches, wireless headphones, portable sensors, etc. These devices usually require efficient power management to maximize battery life. The low on-resistance and efficient switching performance of this MOSFET enable it to improve overall operating efficiency under limited battery power.
**2. Power management system: **
This MOSFET can be used in various low-voltage power management systems, especially in applications such as DC-DC converters and LDO (low dropout regulators). In these power modules, SSM3J36MFV-VB can provide efficient power conversion and reduce system power loss and improve power efficiency.
**3. Small load switch: **
SSM3J36MFV-VB can be used as a small load switch for various low-power load control, such as micro motors, electric curtains, LED drivers, etc. Its fast switching performance and low on-resistance make it suitable for use in low-power load environments, enabling efficient load switching and avoiding excessive power loss.
**4. Wireless communication equipment: **
In wireless communication modules, such as Bluetooth, Wi-Fi devices, etc., SSM3J36MFV-VB is also widely used. Its low on-resistance and high switching speed help improve the efficiency of the system, reduce the power consumption of communication equipment, and extend the working time of the equipment.
**5. Sensor interface circuit: **
SSM3J36MFV-VB can be used in sensor interface circuits, especially in battery-powered sensor modules. Its efficient switching characteristics and low on-resistance make it excellent in environments that require precise power control. For example, it can be used in temperature and humidity sensors, electrical sensors, and smart devices.
**6. Small power regulation system: **
This MOSFET is also suitable for small power regulation systems, such as load regulation circuits, power supply selection circuits, etc. It can effectively control the power supply of small current loads, ensure stable operation of the system, and reduce energy waste.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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