中文
English
SSM3J35MFV-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**SSM3J35MFV-VB** is a unipolar P-type MOSFET in **SOT723-3** package, designed for low voltage and high efficiency current switching applications. With **-20V** drain-source voltage (VDS) and **±20V** gate-source voltage (VGS), this MOSFET can achieve high efficiency switching at a lower gate voltage, suitable for various load control and power management applications. **RDS(ON)** (on-resistance) is **456mΩ** (VGS=4.5V) and **380mΩ** (VGS=10V), respectively, which can provide low power consumption and high efficiency current conduction capability. The maximum leakage current is **-0.78A**, making it very suitable for power switch, load switch and other applications in low power, compact electronic products. This MOSFET adopts **Trench** technology, with low on-resistance and small package size, suitable for mobile phones, portable devices, sensor modules and smart home devices.
**SSM3J35MFV-VB** is a unipolar P-type MOSFET in **SOT723-3** package, designed for low voltage and high efficiency current switching applications. With **-20V** drain-source voltage (VDS) and **±20V** gate-source voltage (VGS), this MOSFET can achieve high efficiency switching at a lower gate voltage, suitable for various load control and power management applications. **RDS(ON)** (on-resistance) is **456mΩ** (VGS=4.5V) and **380mΩ** (VGS=10V), respectively, which can provide low power consumption and high efficiency current conduction capability. The maximum leakage current is **-0.78A**, making it very suitable for power switch, load switch and other applications in low power, compact electronic products. This MOSFET adopts **Trench** technology, with low on-resistance and small package size, suitable for mobile phones, portable devices, sensor modules and smart home devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
2. Detailed parameter description
- **Package type**: SOT723-3
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- 456mΩ (VGS=4.5V)
- 380mΩ (VGS=10V)
- **Maximum leakage current (ID)**: -0.78A
- **Technology process**: Trench
- **Maximum power dissipation (Pd)**: Moderate, the specific value depends on the heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: Moderate, suitable for medium to high frequency switching applications
- **Drain current (IDSS)**: Low
- **Switching speed**: Moderate, suitable for low to medium frequency applications
- **Package type**: SOT723-3
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- 456mΩ (VGS=4.5V)
- 380mΩ (VGS=10V)
- **Maximum leakage current (ID)**: -0.78A
- **Technology process**: Trench
- **Maximum power dissipation (Pd)**: Moderate, the specific value depends on the heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: Moderate, suitable for medium to high frequency switching applications
- **Drain current (IDSS)**: Low
- **Switching speed**: Moderate, suitable for low to medium frequency applications
Domain and module applications：
3. Applications and module examples
1. **Low-power power switch**:
**SSM3J35MFV-VB** is suitable for low-voltage power management systems as a power path switch or load switch. In mobile devices, portable power supplies, and low-power electronic systems, it helps reduce power loss and extend battery life through its low on-resistance and efficient current switching capabilities. For example, in smart watches, Bluetooth headsets, and other portable electronic devices, it can effectively manage power on and off, thereby providing high efficiency and long battery life.
2. **Load switch application**:
This MOSFET is very suitable for low-power load switch systems. In smart home devices, wireless sensors, and low-power electronic circuits, the SSM3J35MFV-VB can be used as a main switch to control the start and stop of the load. Its low RDS(ON) makes current transmission more efficient and reduces heat generation, thereby improving the efficiency of the overall system. Especially in battery-powered devices, it helps improve energy efficiency by controlling the switching of the load.
3. **Battery Management System (BMS)**:
In the battery management system, SSM3J35MFV-VB can be used as a protection switch for the battery to help achieve overcharge, over-discharge protection and current control of the battery pack. Due to its low on-resistance and small package size, it is very suitable for integration into the battery management system to optimize the battery charging and discharging efficiency. It is suitable for battery-driven devices such as smartphones, laptops, and power tools.
4. **LED Driver Power Supply**:
SSM3J35MFV-VB can also be used for switch control in LED driver power supplies, especially in LED lighting systems that require high efficiency and low power consumption. Its low on-resistance helps reduce the power loss of the LED driver power supply and is widely used in home, commercial and automotive LED lighting systems to ensure system stability and efficiency.
5. **Smart Home and Wearable Devices**:
In smart homes and wearable devices, SSM3J35MFV-VB is an ideal load switch solution. Its small package, low on-resistance, and moderate switching speed make it very suitable for integration in space-constrained devices that require efficient power management, such as smart home control devices, sensors, smart watches, etc.
In summary, **SSM3J35MFV-VB** is a small, low-power P-type MOSFET suitable for portable devices, battery management, LED driving, power switching, load control and other fields. Its low on-resistance and efficient switching characteristics make it very suitable for use in smart homes, wearable devices, and low-voltage electronic systems, helping to improve the system's energy efficiency and extend battery life.
1. **Low-power power switch**:
**SSM3J35MFV-VB** is suitable for low-voltage power management systems as a power path switch or load switch. In mobile devices, portable power supplies, and low-power electronic systems, it helps reduce power loss and extend battery life through its low on-resistance and efficient current switching capabilities. For example, in smart watches, Bluetooth headsets, and other portable electronic devices, it can effectively manage power on and off, thereby providing high efficiency and long battery life.
2. **Load switch application**:
This MOSFET is very suitable for low-power load switch systems. In smart home devices, wireless sensors, and low-power electronic circuits, the SSM3J35MFV-VB can be used as a main switch to control the start and stop of the load. Its low RDS(ON) makes current transmission more efficient and reduces heat generation, thereby improving the efficiency of the overall system. Especially in battery-powered devices, it helps improve energy efficiency by controlling the switching of the load.
3. **Battery Management System (BMS)**:
In the battery management system, SSM3J35MFV-VB can be used as a protection switch for the battery to help achieve overcharge, over-discharge protection and current control of the battery pack. Due to its low on-resistance and small package size, it is very suitable for integration into the battery management system to optimize the battery charging and discharging efficiency. It is suitable for battery-driven devices such as smartphones, laptops, and power tools.
4. **LED Driver Power Supply**:
SSM3J35MFV-VB can also be used for switch control in LED driver power supplies, especially in LED lighting systems that require high efficiency and low power consumption. Its low on-resistance helps reduce the power loss of the LED driver power supply and is widely used in home, commercial and automotive LED lighting systems to ensure system stability and efficiency.
5. **Smart Home and Wearable Devices**:
In smart homes and wearable devices, SSM3J35MFV-VB is an ideal load switch solution. Its small package, low on-resistance, and moderate switching speed make it very suitable for integration in space-constrained devices that require efficient power management, such as smart home control devices, sensors, smart watches, etc.
In summary, **SSM3J35MFV-VB** is a small, low-power P-type MOSFET suitable for portable devices, battery management, LED driving, power switching, load control and other fields. Its low on-resistance and efficient switching characteristics make it very suitable for use in smart homes, wearable devices, and low-voltage electronic systems, helping to improve the system's energy efficiency and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
