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SSM3J16TE-VB Product details
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SSM3J16TE-VB MOSFET Product Introduction
SSM3J16TE-VB is a unipolar P-channel MOSFET in SOT723-3 package, designed for low voltage, low power applications, and widely used in applications requiring high frequency switching and small size components. The maximum drain-source voltage (V_DS) of this MOSFET is -20V, and the gate-source voltage (V_GS) is ±20V, which is suitable for switch control in low voltage environments. Its threshold voltage (V_th) is -0.45V, and the lower threshold voltage enables it to be turned on at a lower gate-source voltage, which is suitable for low current switching applications. The on-resistance (R_DS(ON)) is 456mΩ (at V_GS=4.5V) and 380mΩ (at V_GS=10V), and the maximum drain current (I_D) is -0.78A. Using Trench technology, this MOSFET has lower conduction losses and is suitable for low power, low current, fast switching applications, especially for space-constrained circuits.
SSM3J16TE-VB is a unipolar P-channel MOSFET in SOT723-3 package, designed for low voltage, low power applications, and widely used in applications requiring high frequency switching and small size components. The maximum drain-source voltage (V_DS) of this MOSFET is -20V, and the gate-source voltage (V_GS) is ±20V, which is suitable for switch control in low voltage environments. Its threshold voltage (V_th) is -0.45V, and the lower threshold voltage enables it to be turned on at a lower gate-source voltage, which is suitable for low current switching applications. The on-resistance (R_DS(ON)) is 456mΩ (at V_GS=4.5V) and 380mΩ (at V_GS=10V), and the maximum drain current (I_D) is -0.78A. Using Trench technology, this MOSFET has lower conduction losses and is suitable for low power, low current, fast switching applications, especially for space-constrained circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
Detailed parameter description
- **Model**: SSM3J16TE-VB
- **Package**: SOT723-3
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (V_DS)**: -20V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -0.45V
- **On-resistance (R_DS(ON))**:
- 456mΩ @ V_GS = 4.5V
- 380mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -0.78A
- **Technology**: Trench
- **Maximum power consumption**: The specific power consumption depends on the application and heat dissipation conditions, but it is suitable for low-power circuits.
The SSM3J16TE-VB MOSFET provides a lower threshold voltage and on-resistance, suitable for applications that require small size, low current and high-frequency switching. Its Trench technology gives it good conduction performance and low power consumption characteristics, and is widely used in low-power switching power supplies, load control and regulation circuits.
- **Model**: SSM3J16TE-VB
- **Package**: SOT723-3
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (V_DS)**: -20V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -0.45V
- **On-resistance (R_DS(ON))**:
- 456mΩ @ V_GS = 4.5V
- 380mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -0.78A
- **Technology**: Trench
- **Maximum power consumption**: The specific power consumption depends on the application and heat dissipation conditions, but it is suitable for low-power circuits.
The SSM3J16TE-VB MOSFET provides a lower threshold voltage and on-resistance, suitable for applications that require small size, low current and high-frequency switching. Its Trench technology gives it good conduction performance and low power consumption characteristics, and is widely used in low-power switching power supplies, load control and regulation circuits.
Domain and module applications：
Application fields and module examples
SSM3J16TE-VB MOSFET is suitable for a variety of low-power, low-current switching applications. Here are several typical application scenarios:
1. **Portable device power management**:
- This MOSFET is very suitable for power management systems in portable electronic products such as smartphones, tablets, and smart wearable devices. Its small size (SOT723-3 package) and low on-resistance enable it to work effectively in miniaturized power modules, providing efficient current switching while ensuring long battery life.
2. **Wireless devices and sensors**:
- In low-power wireless devices and sensors, SSM3J16TE-VB can be used for power switching and load regulation. For example, in applications such as Internet of Things (IoT) devices and smart home sensors, it provides a small package and high-efficiency power switching solution.
3. **DC-DC Converter**:
- The SSM3J16TE-VB can be widely used in low-power DC-DC converter modules, especially where fast switching and lower current are required. Its low on-resistance and high switching frequency make it suitable for efficient voltage conversion and current regulation.
4. **Battery-Powered Low-Power Power Supply**:
- In battery-driven devices, the SSM3J16TE-VB can be used for battery voltage regulation and power switching. Due to its low on-resistance and small package, it can effectively save space and extend battery life, making it ideal for wireless headphones, electric toys and portable power devices.
5. **LED Drive Circuit**:
- In LED drive circuits, the SSM3J16TE-VB can be used to regulate current and control power. Its low on-resistance ensures stable current output, thereby ensuring the brightness and life of the LED, while improving power efficiency.
6. **Load Switching and Overcurrent Protection**:
- This MOSFET can also be used in load switching and overcurrent protection circuits. Due to its low threshold voltage and high switching speed, it can quickly respond to current changes and protect the circuit from overcurrent or overvoltage conditions.
7. **Power Tools and Small Motor Control**:
- In small power tools and motor control systems, the SSM3J16TE-VB can be used for load control and motor drive. Its small package and efficient switching performance make it an ideal choice for low-power applications such as power tools and electric toys.
In summary, the SSM3J16TE-VB is very suitable for portable devices, battery-powered systems, DC-DC conversion, LED drivers, wireless sensors and other power control systems that require miniaturization and high efficiency due to its low voltage, low power, fast switching and small package characteristics.
SSM3J16TE-VB MOSFET is suitable for a variety of low-power, low-current switching applications. Here are several typical application scenarios:
1. **Portable device power management**:
- This MOSFET is very suitable for power management systems in portable electronic products such as smartphones, tablets, and smart wearable devices. Its small size (SOT723-3 package) and low on-resistance enable it to work effectively in miniaturized power modules, providing efficient current switching while ensuring long battery life.
2. **Wireless devices and sensors**:
- In low-power wireless devices and sensors, SSM3J16TE-VB can be used for power switching and load regulation. For example, in applications such as Internet of Things (IoT) devices and smart home sensors, it provides a small package and high-efficiency power switching solution.
3. **DC-DC Converter**:
- The SSM3J16TE-VB can be widely used in low-power DC-DC converter modules, especially where fast switching and lower current are required. Its low on-resistance and high switching frequency make it suitable for efficient voltage conversion and current regulation.
4. **Battery-Powered Low-Power Power Supply**:
- In battery-driven devices, the SSM3J16TE-VB can be used for battery voltage regulation and power switching. Due to its low on-resistance and small package, it can effectively save space and extend battery life, making it ideal for wireless headphones, electric toys and portable power devices.
5. **LED Drive Circuit**:
- In LED drive circuits, the SSM3J16TE-VB can be used to regulate current and control power. Its low on-resistance ensures stable current output, thereby ensuring the brightness and life of the LED, while improving power efficiency.
6. **Load Switching and Overcurrent Protection**:
- This MOSFET can also be used in load switching and overcurrent protection circuits. Due to its low threshold voltage and high switching speed, it can quickly respond to current changes and protect the circuit from overcurrent or overvoltage conditions.
7. **Power Tools and Small Motor Control**:
- In small power tools and motor control systems, the SSM3J16TE-VB can be used for load control and motor drive. Its small package and efficient switching performance make it an ideal choice for low-power applications such as power tools and electric toys.
In summary, the SSM3J16TE-VB is very suitable for portable devices, battery-powered systems, DC-DC conversion, LED drivers, wireless sensors and other power control systems that require miniaturization and high efficiency due to its low voltage, low power, fast switching and small package characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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