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SSM3J16FV-VB Product details
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1. **Product Introduction:**
SSM3J16FV-VB is a small P-type MOSFET in SOT723-3 package, designed for low voltage, high efficiency switching circuits. Its maximum drain-source voltage (VDS) is -20V, suitable for low voltage control applications, especially when low power switching elements are required. The threshold voltage (Vth) of this MOSFET is -0.45V, which has good switching characteristics. Its on-resistance (RDS(ON)) is 456mΩ (at VGS = 4.5V) and 380mΩ (at VGS = 10V), respectively, providing it with low conduction loss. The maximum drain current is -0.78A, suitable for low power circuits and low current drive applications.
SSM3J16FV-VB uses Trench technology, which can provide excellent switching performance in a smaller package, suitable for compact design and low voltage drive occasions. Its compact SOT723-3 package makes it ideal for space-constrained applications such as mobile devices, low-power power supplies, and battery management systems.
SSM3J16FV-VB is a small P-type MOSFET in SOT723-3 package, designed for low voltage, high efficiency switching circuits. Its maximum drain-source voltage (VDS) is -20V, suitable for low voltage control applications, especially when low power switching elements are required. The threshold voltage (Vth) of this MOSFET is -0.45V, which has good switching characteristics. Its on-resistance (RDS(ON)) is 456mΩ (at VGS = 4.5V) and 380mΩ (at VGS = 10V), respectively, providing it with low conduction loss. The maximum drain current is -0.78A, suitable for low power circuits and low current drive applications.
SSM3J16FV-VB uses Trench technology, which can provide excellent switching performance in a smaller package, suitable for compact design and low voltage drive occasions. Its compact SOT723-3 package makes it ideal for space-constrained applications such as mobile devices, low-power power supplies, and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
2. **Detailed parameter description:**
- **Model**: SSM3J16FV-VB
- **Package type**: SOT723-3
- **Configuration**: Single-channel P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- 456mΩ (at VGS=4.5V)
- 380mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -0.78A
- **Technology**: Trench (trench technology)
- **Model**: SSM3J16FV-VB
- **Package type**: SOT723-3
- **Configuration**: Single-channel P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.45V
- **On-resistance (RDS(ON))**:
- 456mΩ (at VGS=4.5V)
- 380mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -0.78A
- **Technology**: Trench (trench technology)
Domain and module applications：
*Application fields and module examples: **
#### (1) **Low power switch mode power supply (SMPS) **
SSM3J16FV-VB is very suitable for low power switch mode power supply (SMPS) modules, especially in 5V or 12V power supply systems. In these power supply systems, MOSFET plays an important switching role and can achieve efficient power conversion at low voltage. Due to its small package and low on-resistance, this MOSFET is particularly suitable for power management of portable battery-powered devices (such as mobile phones, Bluetooth headsets, mobile power supplies, etc.).
#### (2) **Low voltage logic level conversion **
In low voltage logic level conversion applications, SSM3J16FV-VB can be used for signal conversion between different voltage systems. Especially in embedded systems or microcontroller applications, signal conversion between low voltage and high voltage is usually required. The low on-resistance and good switching performance of this MOSFET enable it to provide efficient and reliable level conversion in these circuits to ensure accurate signal transmission.
#### （3）**Battery Management System (BMS)**
SSM3J16FV-VB can be widely used in battery management systems (BMS), especially in the charge and discharge control of small batteries (such as lithium batteries or rechargeable batteries). This MOSFET can provide switching control at the positive electrode of the battery to help monitor the battery's charge and discharge status. Its low on-resistance helps reduce energy loss and provides efficient battery management, suitable for power tools, electric bicycles, consumer electronic devices, etc.
#### （4）**Portable Electronic Devices**
Due to its small SOT723-3 package, SSM3J16FV-VB is ideal for switch control in portable electronic devices such as smart watches, Bluetooth headsets, wireless sensors, etc. These devices usually have strict size requirements, and this MOSFET can provide efficient switching performance in space-constrained environments and extend battery life.
#### （5）**LED drive and lighting control**
SSM3J16FV-VB is also suitable for small LED drive and lighting control circuits. In these applications, MOSFET acts as a switching element to control the flow of current, ensuring efficient drive and stable brightness of LED lamps. Since this MOSFET provides a low on-resistance, it can efficiently drive LEDs at low voltages and is suitable for applications in low-power lighting equipment, small display screens, etc.
#### （6）**Power tools and small motor drives**
SSM3J16FV-VB can be used in small power tools and low-power motor drive circuits. Due to its small package and efficient switching characteristics, it can efficiently control the start, stop and speed regulation of motors in battery-driven systems, and is widely used in power tools, electric toys, and household appliances.
### Summary:
SSM3J16FV-VB is a small P-type MOSFET suitable for low voltage and low power applications, with low on-resistance and good switching performance. It is widely used in low power switching power supplies, battery management systems, logic level conversion, power tool drivers, LED drivers and portable electronic devices. With its small package and efficient performance, it plays an important role in modern electronic products.
#### (1) **Low power switch mode power supply (SMPS) **
SSM3J16FV-VB is very suitable for low power switch mode power supply (SMPS) modules, especially in 5V or 12V power supply systems. In these power supply systems, MOSFET plays an important switching role and can achieve efficient power conversion at low voltage. Due to its small package and low on-resistance, this MOSFET is particularly suitable for power management of portable battery-powered devices (such as mobile phones, Bluetooth headsets, mobile power supplies, etc.).
#### (2) **Low voltage logic level conversion **
In low voltage logic level conversion applications, SSM3J16FV-VB can be used for signal conversion between different voltage systems. Especially in embedded systems or microcontroller applications, signal conversion between low voltage and high voltage is usually required. The low on-resistance and good switching performance of this MOSFET enable it to provide efficient and reliable level conversion in these circuits to ensure accurate signal transmission.
#### （3）**Battery Management System (BMS)**
SSM3J16FV-VB can be widely used in battery management systems (BMS), especially in the charge and discharge control of small batteries (such as lithium batteries or rechargeable batteries). This MOSFET can provide switching control at the positive electrode of the battery to help monitor the battery's charge and discharge status. Its low on-resistance helps reduce energy loss and provides efficient battery management, suitable for power tools, electric bicycles, consumer electronic devices, etc.
#### （4）**Portable Electronic Devices**
Due to its small SOT723-3 package, SSM3J16FV-VB is ideal for switch control in portable electronic devices such as smart watches, Bluetooth headsets, wireless sensors, etc. These devices usually have strict size requirements, and this MOSFET can provide efficient switching performance in space-constrained environments and extend battery life.
#### （5）**LED drive and lighting control**
SSM3J16FV-VB is also suitable for small LED drive and lighting control circuits. In these applications, MOSFET acts as a switching element to control the flow of current, ensuring efficient drive and stable brightness of LED lamps. Since this MOSFET provides a low on-resistance, it can efficiently drive LEDs at low voltages and is suitable for applications in low-power lighting equipment, small display screens, etc.
#### （6）**Power tools and small motor drives**
SSM3J16FV-VB can be used in small power tools and low-power motor drive circuits. Due to its small package and efficient switching characteristics, it can efficiently control the start, stop and speed regulation of motors in battery-driven systems, and is widely used in power tools, electric toys, and household appliances.
### Summary:
SSM3J16FV-VB is a small P-type MOSFET suitable for low voltage and low power applications, with low on-resistance and good switching performance. It is widely used in low power switching power supplies, battery management systems, logic level conversion, power tool drivers, LED drivers and portable electronic devices. With its small package and efficient performance, it plays an important role in modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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