Product introduction:
**SSM3J109TU-VB MOSFET Product Introduction**
SSM3J109TU-VB is a high-efficiency P-Channel MOSFET in SC70-3 package, designed for low-voltage, low-power electronic applications. It has a low on-resistance (RDS(ON)), which is 100mΩ at VGS=2.5V and 80mΩ at VGS=4.5V, which makes it perform well in high-frequency switching operations, reduce power losses, and improve the energy efficiency of the overall system. The drain-source voltage (VDS) of SSM3J109TU-VB is -20V, which is suitable for low-voltage power management and switch control circuits.
The turn-on voltage (Vth) of this MOSFET is -0.6V, and the maximum gate-source voltage (VGS) is ±12V, which can start and work stably at a lower gate-source voltage. Its maximum drain current (ID) is -3.1A, which is very suitable for small, high-efficiency power management and switching applications.
SSM3J109TU-VB uses Trench technology to provide lower on-resistance and better power density, making it ideal for applications with limited space and requiring efficient power conversion.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
100mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-P |
|
|
|
|
|
|
|
**SSM3J109TU-VB MOSFET detailed parameter description**
- **Package**: SC70-3
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Throw-on voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ (at VGS=2.5V)
- 80mΩ (at VGS=4.5V)
- **Maximum drain current (ID)**: -3.1A
- **Technology**: Trench
- **Maximum power loss (Pd)**: Depending on the temperature and current conditions of the working environment, the typical power loss is less than 1W (needs to be calculated based on the specific application)
- **Junction temperature (Tj)**: Maximum 150°C
- **Vibration resistance**: Meets industry standards, suitable for most industrial applications, with good thermal stability and vibration resistance.
Domain and module applications:
**Application Areas and Modules**
1. **Low Voltage Power Management**:
The 20V withstand voltage of the SSM3J109TU-VB makes it particularly suitable for low voltage power management systems, such as power switches in 3.3V, 5V and 12V systems. It can operate efficiently at lower gate-source voltages and is suitable for applications that require fast switching operations and have strict power consumption requirements.
2. **Battery-Powered Devices**:
In battery-powered devices such as portable electronic devices and power tools, the SSM3J109TU-VB can be used as an efficient power switching element to control the charging and discharging process of the battery. Due to its low RDS(ON) value, it can significantly reduce power losses, improve battery life, and extend the service life of the device.
3. **DC-DC Converters**:
This MOSFET is particularly suitable in DC-DC converters, especially as load switches and power switches. In miniaturized, high-efficiency power modules, the SSM3J109TU-VB can reduce energy losses during the conversion process and improve the overall efficiency of the system. It performs well under low-voltage, high-frequency operation.
4. **Smart Cards and Sensor Modules**:
The SSM3J109TU-VB is suitable for space-constrained, low-power applications such as smart cards, sensor modules, and other portable devices due to its compact SC70-3 package. These applications often require efficient power management and switching control to reduce power consumption and extend battery life.
5. **LED Drive Circuits**:
In LED drive circuits, the SSM3J109TU-VB can be used as a switching element to regulate current and ensure stable operation of the LED. Its low on-resistance makes it excellent in high-efficiency lighting applications, which can improve energy utilization and reduce power loss.
6. **Load Switch and Protection Circuit**:
In load switch circuits and overcurrent protection circuits, SSM3J109TU-VB as a P-Channel MOSFET can efficiently control the switching operation of the load. It can effectively manage the current flow in load switch applications and protect the circuit from electrical damage such as overvoltage and overcurrent.
7. **Automotive Electronics Application**:
In the field of automotive electronics, SSM3J109TU-VB can be used in small power management systems such as on-board battery charging, voltage regulation and distribution circuits. Due to its small size and high efficiency, it can provide stable power support for various electrical subsystems in on-board electronic devices.
8. **Internet of Things (IoT) Devices**:
Since IoT devices usually have low power consumption and miniaturization design requirements, SSM3J109TU-VB is a very suitable switch element for such applications. It can effectively manage battery power in sensors, smart home devices and wearable devices to improve the endurance and stability of the device.
With the SSM3J109TU-VB, designers can provide reliable solutions in a variety of electronic devices that require low voltage and high-efficiency power management, meeting the stringent requirements of modern portable devices, smart systems and low-power applications for high performance and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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