SSM2605GY-VB Product details
Product introduction:
SSM2605GY-VB is a single P-channel MOSFET in a SOT23-6 package, designed for switch control and current regulation in low-voltage applications. This MOSFET has a maximum drain-source voltage (V_DS) of -30V and can operate stably in a low voltage and current environment. Its on-resistance (R_DS(ON)) is 49mΩ when the gate-source voltage (V_GS) is 10V. It has low conduction loss and efficient switching performance, and is very suitable for applications in low-power power management, load switching, and overcurrent protection. The SSM2605GY-VB uses Trench technology to provide better switching speed and high efficiency, making it an ideal choice for applications that require high reliability and small packaging.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package type**: SOT23-6
- **Configuration**: Single P channel
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ @V_GS = 4.5V
- 49mΩ @V_GS = 10V
- **Maximum drain current (I_D)**: -4.8A
- **Technology**: Trench
Domain and module applications:
1. **Low-power power management**:
SSM2605GY-VB is suitable for low-power power management systems, especially in mobile devices, portable battery-powered systems, etc. Its low on-resistance and low voltage threshold enable it to provide efficient switching control under low-voltage operation, thereby improving battery efficiency and extending the use time of the device.
2. **Load switch and current control**:
This MOSFET is suitable for use in load switching circuits, especially those applications that require load current regulation through switching. Due to its small package and high efficiency, it performs well in various portable electronic products and battery-powered devices, effectively controlling the flow of current and protecting the system from overload and short circuit.
3. **Overcurrent protection circuit**:
In the power system, SSM2605GY-VB can be used in overcurrent protection circuits to protect the device from damage by detecting the current and cutting off the current path when it exceeds the preset value. Its low on-resistance and fast switching characteristics make it very reliable during dynamic response and can provide safety protection under high load conditions.
4. **Mobile devices and portable products**:
The small SOT23-6 package of the SSM2605GY-VB makes it very suitable for space-constrained applications such as smartphones, tablets, wearable devices, etc. In these devices, MOSFETs are used in battery-powered systems to control current flow and optimize power management to ensure battery efficiency during long-term use of the device.
5. **Battery charging management**:
This MOSFET can also be applied to battery charging management systems to help achieve efficient charging current regulation. During the charging process, the MOSFET can be used to control the current flow and ensure the safety of the battery during the charging process, while reducing power losses and improving system efficiency by reducing the on-resistance.
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