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SSM2603GY-VB Product details
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Product Introduction:
**SSM2603GY-VB** is a high-efficiency, low on-resistance P-channel MOSFET in a **SOT23-6** package, designed for low-voltage and small power applications. Its maximum drain-source voltage (VDS) is -30V, suitable for power management and power switching circuits that require negative voltage drive. Manufactured based on **Trench** technology, this MOSFET has excellent switching characteristics and low on-resistance (**RDS(ON)**), enabling it to perform well in low-current applications. The maximum drain current (ID) is -4.8A and has a wide range of adaptability, making it suitable for a variety of low-power devices such as switching power supplies, battery management systems, and load drive circuits.
**SSM2603GY-VB** is a high-efficiency, low on-resistance P-channel MOSFET in a **SOT23-6** package, designed for low-voltage and small power applications. Its maximum drain-source voltage (VDS) is -30V, suitable for power management and power switching circuits that require negative voltage drive. Manufactured based on **Trench** technology, this MOSFET has excellent switching characteristics and low on-resistance (**RDS(ON)**), enabling it to perform well in low-current applications. The maximum drain current (ID) is -4.8A and has a wide range of adaptability, making it suitable for a variety of low-power devices such as switching power supplies, battery management systems, and load drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model: ** SSM2603GY-VB
- **Package: ** SOT23-6
- **Configuration: ** Single-P-Channel
- **VDS (drain-source voltage): ** -30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -1.7V
- **RDS(ON) (on-resistance): **
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **ID (drain current): ** -4.8A
- **Technology: ** Trench
- **Maximum power consumption: ** 1.25W (typical)
- **Total gate charge: ** 20nC (typical)
- **Reverse recovery time (Trr): ** 35ns (typical)
- **Turn-on/turn-off time: ** Fast response, suitable for high frequency switching applications
- **Maximum gate-source voltage (VGS): ** ±20V
- **Operating temperature range: ** -55°C to +150°C
- **Model: ** SSM2603GY-VB
- **Package: ** SOT23-6
- **Configuration: ** Single-P-Channel
- **VDS (drain-source voltage): ** -30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -1.7V
- **RDS(ON) (on-resistance): **
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **ID (drain current): ** -4.8A
- **Technology: ** Trench
- **Maximum power consumption: ** 1.25W (typical)
- **Total gate charge: ** 20nC (typical)
- **Reverse recovery time (Trr): ** 35ns (typical)
- **Turn-on/turn-off time: ** Fast response, suitable for high frequency switching applications
- **Maximum gate-source voltage (VGS): ** ±20V
- **Operating temperature range: ** -55°C to +150°C
Domain and module applications：
Applications and modules:
**1. Battery Management System (BMS): **
The low on-resistance and high efficiency of SSM2603GY-VB make it very suitable for use in battery management systems. It can be used in battery charge and discharge control and protection circuits, especially in situations where precise control of battery voltage and current is required. Due to its low **RDS(ON)** value, it can reduce power loss during the charge and discharge process and extend battery life.
**2. Switching power supply module: **
This MOSFET has good performance in switching power supplies, especially for low-voltage DC-DC converters. Due to its low on-resistance and efficient switching performance, SSM2603GY-VB can significantly improve power efficiency and reduce heat generation, and is suitable for use in compact, low-power electronic devices.
**3. Low-power load drive: **
In the load drive circuit, the SSM2603GY-VB can efficiently control the load switch, which is particularly suitable for low-power, low-voltage application scenarios such as portable devices, sensor modules, etc. It can provide precise control to ensure that the load operates normally under appropriate voltage conditions.
**4. Logic circuits and signal processing: **
Due to its smaller package and low power consumption, the SSM2603GY-VB is suitable for small logic circuits and signal processing modules. These circuits require fast switching and low-power operation, and the high efficiency and fast response time of this MOSFET make it an ideal choice.
**5. Low-voltage control switch: **
The SSM2603GY-VB can be used in switch control modules in low-voltage applications, such as switch control in smart home devices and automation systems. Its efficient switching performance and low on-resistance enable it to provide high efficiency and long-term stability in these systems.
**1. Battery Management System (BMS): **
The low on-resistance and high efficiency of SSM2603GY-VB make it very suitable for use in battery management systems. It can be used in battery charge and discharge control and protection circuits, especially in situations where precise control of battery voltage and current is required. Due to its low **RDS(ON)** value, it can reduce power loss during the charge and discharge process and extend battery life.
**2. Switching power supply module: **
This MOSFET has good performance in switching power supplies, especially for low-voltage DC-DC converters. Due to its low on-resistance and efficient switching performance, SSM2603GY-VB can significantly improve power efficiency and reduce heat generation, and is suitable for use in compact, low-power electronic devices.
**3. Low-power load drive: **
In the load drive circuit, the SSM2603GY-VB can efficiently control the load switch, which is particularly suitable for low-power, low-voltage application scenarios such as portable devices, sensor modules, etc. It can provide precise control to ensure that the load operates normally under appropriate voltage conditions.
**4. Logic circuits and signal processing: **
Due to its smaller package and low power consumption, the SSM2603GY-VB is suitable for small logic circuits and signal processing modules. These circuits require fast switching and low-power operation, and the high efficiency and fast response time of this MOSFET make it an ideal choice.
**5. Low-voltage control switch: **
The SSM2603GY-VB can be used in switch control modules in low-voltage applications, such as switch control in smart home devices and automation systems. Its efficient switching performance and low on-resistance enable it to provide high efficiency and long-term stability in these systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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