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SSM1N45B-VB Product details
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SSM1N45B-VB MOSFET Product Introduction
SSM1N45B-VB is a unipolar N-channel MOSFET in SOT223 package, designed for high voltage applications. Its maximum drain-source voltage (V_DS) is 650V, and the gate-source voltage (V_GS) is ±30V, which is suitable for medium to high voltage power control applications. This MOSFET has a high threshold voltage (V_th) of 3.5V, and an on-resistance (R_DS(ON)) of 5000mΩ (at V_GS=4.5V) and 4000mΩ (at V_GS=10V). The maximum drain current (I_D) is 2A, and Plannar technology is used, which makes it have good performance within a certain current and voltage range, especially for low power and high voltage applications. SSM1N45B-VB has reliable thermal management performance and stable switching characteristics, which is very suitable for applications requiring high voltage resistance and low current operation.
SSM1N45B-VB is a unipolar N-channel MOSFET in SOT223 package, designed for high voltage applications. Its maximum drain-source voltage (V_DS) is 650V, and the gate-source voltage (V_GS) is ±30V, which is suitable for medium to high voltage power control applications. This MOSFET has a high threshold voltage (V_th) of 3.5V, and an on-resistance (R_DS(ON)) of 5000mΩ (at V_GS=4.5V) and 4000mΩ (at V_GS=10V). The maximum drain current (I_D) is 2A, and Plannar technology is used, which makes it have good performance within a certain current and voltage range, especially for low power and high voltage applications. SSM1N45B-VB has reliable thermal management performance and stable switching characteristics, which is very suitable for applications requiring high voltage resistance and low current operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 2A | 4000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: SSM1N45B-VB
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 5000mΩ @ V_GS = 4.5V
- 4000mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 2A
- **Technology**: Plannar
- **Maximum power consumption**: The specific power consumption depends on the application and heat dissipation conditions, but it is suitable for low-power circuits.
This MOSFET uses Plannar technology and can still provide good switching performance and on-resistance at a high voltage of 650V, making it suitable for medium-power electronic system applications. Its higher on-resistance limits its application in high-current environments, but it still shows stability and reliability for low-current and high-voltage systems.
- **Model**: SSM1N45B-VB
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 5000mΩ @ V_GS = 4.5V
- 4000mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 2A
- **Technology**: Plannar
- **Maximum power consumption**: The specific power consumption depends on the application and heat dissipation conditions, but it is suitable for low-power circuits.
This MOSFET uses Plannar technology and can still provide good switching performance and on-resistance at a high voltage of 650V, making it suitable for medium-power electronic system applications. Its higher on-resistance limits its application in high-current environments, but it still shows stability and reliability for low-current and high-voltage systems.
Domain and module applications：
Application fields and module examples
SSM1N45B-VB MOSFET is mainly suitable for high voltage, low current power switching applications. The following are several typical application scenarios:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply module, SSM1N45B-VB is widely used in power supply systems in the medium voltage range (such as below 650V). It can efficiently perform power conversion, especially suitable for small switching power supplies, standby power supplies and low-power power supply modules. Due to its high on-resistance, it is suitable for smaller power supply systems and can ensure stable operation of the power supply.
2. **Small Power Drive System**:
- In small power drive applications, such as small power power tools, fans or household appliances, SSM1N45B-VB can be used as a power switch element to control the switching of current. Due to its voltage resistance, it can work stably in the medium voltage range and has good thermal management performance.
3. **Automotive Electronic Systems**:
- This MOSFET is suitable for low-power switching applications in automotive electronic systems, such as power regulators or small electronic load circuits with low current loads. Due to its 650V withstand voltage capability, it can operate stably in the battery management system or power regulation module of electric vehicles.
4. **Battery Management System (BMS)**:
- The SSM1N45B-VB can be used for charge and discharge control of low-power battery packs in battery management systems. Its high withstand voltage and low drain current make it very suitable for battery monitoring and regulation, especially in medium-voltage battery systems.
5. **LED Drive and Lighting Control Systems**:
- In LED drivers and lighting control systems, the SSM1N45B-VB MOSFET is used for high voltage regulation and drive current control. Due to its 650V withstand voltage performance, this MOSFET can effectively regulate current in low-power LED drive circuits and provide stable light source drive.
6. **Electrical protection and overvoltage protection circuit**:
- SSM1N45B-VB is also widely used in electrical protection systems, especially in protection circuits when the voltage is too high. It can handle higher voltages, prevent system overvoltage, and provide voltage regulation. It is suitable for overvoltage protection systems in the fields of home appliances, industrial equipment, etc.
In summary, SSM1N45B-VB MOSFET is suitable for medium and low power, high voltage electronic systems due to its high voltage tolerance, high on-resistance and stable switching performance. It is particularly suitable for application fields such as switching power supplies, battery management, automotive electronics, LED drivers and overvoltage protection circuits.
SSM1N45B-VB MOSFET is mainly suitable for high voltage, low current power switching applications. The following are several typical application scenarios:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply module, SSM1N45B-VB is widely used in power supply systems in the medium voltage range (such as below 650V). It can efficiently perform power conversion, especially suitable for small switching power supplies, standby power supplies and low-power power supply modules. Due to its high on-resistance, it is suitable for smaller power supply systems and can ensure stable operation of the power supply.
2. **Small Power Drive System**:
- In small power drive applications, such as small power power tools, fans or household appliances, SSM1N45B-VB can be used as a power switch element to control the switching of current. Due to its voltage resistance, it can work stably in the medium voltage range and has good thermal management performance.
3. **Automotive Electronic Systems**:
- This MOSFET is suitable for low-power switching applications in automotive electronic systems, such as power regulators or small electronic load circuits with low current loads. Due to its 650V withstand voltage capability, it can operate stably in the battery management system or power regulation module of electric vehicles.
4. **Battery Management System (BMS)**:
- The SSM1N45B-VB can be used for charge and discharge control of low-power battery packs in battery management systems. Its high withstand voltage and low drain current make it very suitable for battery monitoring and regulation, especially in medium-voltage battery systems.
5. **LED Drive and Lighting Control Systems**:
- In LED drivers and lighting control systems, the SSM1N45B-VB MOSFET is used for high voltage regulation and drive current control. Due to its 650V withstand voltage performance, this MOSFET can effectively regulate current in low-power LED drive circuits and provide stable light source drive.
6. **Electrical protection and overvoltage protection circuit**:
- SSM1N45B-VB is also widely used in electrical protection systems, especially in protection circuits when the voltage is too high. It can handle higher voltages, prevent system overvoltage, and provide voltage regulation. It is suitable for overvoltage protection systems in the fields of home appliances, industrial equipment, etc.
In summary, SSM1N45B-VB MOSFET is suitable for medium and low power, high voltage electronic systems due to its high voltage tolerance, high on-resistance and stable switching performance. It is particularly suitable for application fields such as switching power supplies, battery management, automotive electronics, LED drivers and overvoltage protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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