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SSH9N80A-VB Product details
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1. Product Introduction
**SSH9N80A-VB** is a high voltage, high efficiency unipolar N-type MOSFET in a **TO3P** package, designed to withstand a high drain-source voltage (VDS) of **800V**. This MOSFET has a low **on-resistance** (RDS(ON) = 500mΩ, VGS=10V) and excellent **switching performance**, capable of supporting a maximum **11A** drain current (ID). It uses **SJ_Multi-EPI** technology to enhance thermal management and switching efficiency, and is particularly suitable for high voltage, high current and high frequency switching applications. The SSH9N80A-VB is suitable for high efficiency power management, inverters, electric vehicle charging systems, motor drives and other fields, and has a wide range of applications in various industrial and consumer electronic devices.
**SSH9N80A-VB** is a high voltage, high efficiency unipolar N-type MOSFET in a **TO3P** package, designed to withstand a high drain-source voltage (VDS) of **800V**. This MOSFET has a low **on-resistance** (RDS(ON) = 500mΩ, VGS=10V) and excellent **switching performance**, capable of supporting a maximum **11A** drain current (ID). It uses **SJ_Multi-EPI** technology to enhance thermal management and switching efficiency, and is particularly suitable for high voltage, high current and high frequency switching applications. The SSH9N80A-VB is suitable for high efficiency power management, inverters, electric vehicle charging systems, motor drives and other fields, and has a wide range of applications in various industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 11A
- **Maximum power dissipation (Pd)**: 70W (the specific value depends on the heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate charge (Qg)**: Moderate, suitable for medium and high frequency switching applications
- **Drain current (IDSS)**: Low
- **Switching speed**: Moderate
- **Maximum switching frequency**: Suitable for medium and low frequency applications
- **Technology**: SJ_Multi-EPI, enhanced thermal management and efficiency
- **Package type**: TO3P
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 11A
- **Maximum power dissipation (Pd)**: 70W (the specific value depends on the heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate charge (Qg)**: Moderate, suitable for medium and high frequency switching applications
- **Drain current (IDSS)**: Low
- **Switching speed**: Moderate
- **Maximum switching frequency**: Suitable for medium and low frequency applications
- **Technology**: SJ_Multi-EPI, enhanced thermal management and efficiency
Domain and module applications：
3. Application fields and module examples
1. **Power management system**:
Due to its high voltage tolerance and low on-resistance, SSH9N80A-VB is particularly suitable for power management systems, especially switching power supplies (such as AC-DC, DC-DC converters). It can effectively reduce switching losses and improve energy efficiency, and is suitable for power modules that require high voltage conversion, such as battery charging systems and uninterruptible power supplies (UPS). Its high voltage tolerance enables it to withstand large fluctuations in input voltage and stably provide the required power output.
2. **Inverter application**:
In the field of solar energy, wind energy and other renewable energy sources, inverters are key devices that convert direct current (DC) into alternating current (AC). SSH9N80A-VB can be used as a switching element in the inverter to withstand high voltage and high current and perform power conversion efficiently. Due to its low on-resistance and high switching efficiency, it can effectively reduce the power loss and heat generation of the inverter and improve the overall efficiency of the system.
3. **Electric vehicle charging system**:
SSH9N80A-VB is suitable for electric vehicle charging piles and power conversion modules inside electric vehicles. Its high voltage tolerance of 800V and low on-resistance make it very suitable for high-efficiency battery charging applications. During the charging process, the excellent switching performance of MOSFET can effectively improve the charging efficiency and reduce heat loss, ensuring the stability and safety of the charging system.
4. **Motor drive system**:
In the field of motor control, SSH9N80A-VB can be used in motor drive modules in industrial automation, power tools and home appliances. Because it supports high voltage and high current, it can provide strong starting and driving capabilities for motors. In power tools and home appliances, its high efficiency and low on-resistance can reduce power loss and improve the overall efficiency and reliability of the system.
5. **High-frequency switching power supply**:
In high-frequency switching power supply applications, such as LED driver power supply, TV power supply and communication equipment power supply, SSH9N80A-VB can provide efficient power conversion and stable current output. Its high voltage tolerance and low on-resistance enable it to maintain stable operation under high frequency and large load changes. It performs well in application scenarios that require low power loss and high efficiency.
In summary, **SSH9N80A-VB** is a high-efficiency and high-reliability MOSFET that is widely used in power management, inverters, electric vehicle charging, motor drives, and high-frequency switching power supplies. Its excellent electrical characteristics and thermal performance enable it to provide stable and reliable working performance in harsh environments and effectively improve the overall efficiency of the system.
1. **Power management system**:
Due to its high voltage tolerance and low on-resistance, SSH9N80A-VB is particularly suitable for power management systems, especially switching power supplies (such as AC-DC, DC-DC converters). It can effectively reduce switching losses and improve energy efficiency, and is suitable for power modules that require high voltage conversion, such as battery charging systems and uninterruptible power supplies (UPS). Its high voltage tolerance enables it to withstand large fluctuations in input voltage and stably provide the required power output.
2. **Inverter application**:
In the field of solar energy, wind energy and other renewable energy sources, inverters are key devices that convert direct current (DC) into alternating current (AC). SSH9N80A-VB can be used as a switching element in the inverter to withstand high voltage and high current and perform power conversion efficiently. Due to its low on-resistance and high switching efficiency, it can effectively reduce the power loss and heat generation of the inverter and improve the overall efficiency of the system.
3. **Electric vehicle charging system**:
SSH9N80A-VB is suitable for electric vehicle charging piles and power conversion modules inside electric vehicles. Its high voltage tolerance of 800V and low on-resistance make it very suitable for high-efficiency battery charging applications. During the charging process, the excellent switching performance of MOSFET can effectively improve the charging efficiency and reduce heat loss, ensuring the stability and safety of the charging system.
4. **Motor drive system**:
In the field of motor control, SSH9N80A-VB can be used in motor drive modules in industrial automation, power tools and home appliances. Because it supports high voltage and high current, it can provide strong starting and driving capabilities for motors. In power tools and home appliances, its high efficiency and low on-resistance can reduce power loss and improve the overall efficiency and reliability of the system.
5. **High-frequency switching power supply**:
In high-frequency switching power supply applications, such as LED driver power supply, TV power supply and communication equipment power supply, SSH9N80A-VB can provide efficient power conversion and stable current output. Its high voltage tolerance and low on-resistance enable it to maintain stable operation under high frequency and large load changes. It performs well in application scenarios that require low power loss and high efficiency.
In summary, **SSH9N80A-VB** is a high-efficiency and high-reliability MOSFET that is widely used in power management, inverters, electric vehicle charging, motor drives, and high-frequency switching power supplies. Its excellent electrical characteristics and thermal performance enable it to provide stable and reliable working performance in harsh environments and effectively improve the overall efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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