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SSH8N70-VB Product details
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Product Introduction: SSH8N70-VB MOSFET
SSH8N70-VB is a high-performance unipolar N-type power MOSFET designed with TO3P package, suitable for medium and high voltage switching power supplies and power conversion applications. The maximum drain-source voltage (VDS) of this product is 700V, which is suitable for high-voltage power management systems. It has a low on-resistance (RDS(ON)) of 450mΩ (at VGS = 10V), which enables it to provide excellent efficiency in high current applications. The gate-source voltage (VGS) of the MOSFET is a maximum of ±30V, and the threshold voltage (Vth) is 3.5V, which can switch smoothly under standard drive voltage. SSH8N70-VB uses advanced SJ_Multi-EPI technology, which enables the MOSFET to work stably at high current and high voltage, and is widely used in high-efficiency power management, industrial drive, and battery management systems.
SSH8N70-VB is a high-performance unipolar N-type power MOSFET designed with TO3P package, suitable for medium and high voltage switching power supplies and power conversion applications. The maximum drain-source voltage (VDS) of this product is 700V, which is suitable for high-voltage power management systems. It has a low on-resistance (RDS(ON)) of 450mΩ (at VGS = 10V), which enables it to provide excellent efficiency in high current applications. The gate-source voltage (VGS) of the MOSFET is a maximum of ±30V, and the threshold voltage (Vth) is 3.5V, which can switch smoothly under standard drive voltage. SSH8N70-VB uses advanced SJ_Multi-EPI technology, which enables the MOSFET to work stably at high current and high voltage, and is widely used in high-efficiency power management, industrial drive, and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Model**: SSH8N70-VB
- **Package**: TO3P
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: SSH8N70-VB
- **Package**: TO3P
- **Configuration**: Unipolar N-type
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules
1. **High-voltage power conversion system (SMPS)**
SSH8N70-VB is suitable for switching power supply systems that require high voltage, such as AC-DC converters, DC-DC converters, and power adapters. Due to its high drain-source voltage of 700V, it can handle high-voltage input power, and has a low on-resistance to ensure efficient power conversion. It is widely used in industrial power supply, communication power supply, and home appliance power supply.
2. **Industrial power management and motor drive**
In the field of industrial automation and power drive, SSH8N70-VB can be used in variable frequency drives, inverters, and high-power motor drive systems. This MOSFET has a high current carrying capacity (maximum 11A) and can stably control the starting, speed regulation, and braking of the motor. It is suitable for industrial applications such as robots, automation equipment, and power tools.
3. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
In electric vehicles (such as electric cars, electric motorcycles) and their charging systems, the SSH8N70-VB can be used in battery management systems (BMS). Its high voltage tolerance and low on-resistance help effectively manage the battery charging and discharging process, ensure system efficiency and extend battery life. It can support high current rapid charging and discharging processes to ensure stable operation of electric vehicles.
4. **Renewable Energy Systems (Solar, Wind Inverters)**
In renewable energy systems, especially solar and wind power generation systems, the SSH8N70-VB is used for power conversion and voltage regulation. Solar inverters often need to handle high voltages and high currents. This MOSFET provides high-efficiency energy conversion and can stably withstand the high current working environment of the inverter, helping to achieve higher energy efficiency.
5. **Battery Charger and UPS System**
SSH8N70-VB is suitable for battery charger and uninterruptible power supply (UPS) system. Its high voltage and high current handling capabilities are particularly suitable for efficient battery charging and power storage systems. It can effectively reduce power loss during the conversion process and maintain system stability. It is widely used in home appliances, power backup, emergency power supply and other applications.
1. **High-voltage power conversion system (SMPS)**
SSH8N70-VB is suitable for switching power supply systems that require high voltage, such as AC-DC converters, DC-DC converters, and power adapters. Due to its high drain-source voltage of 700V, it can handle high-voltage input power, and has a low on-resistance to ensure efficient power conversion. It is widely used in industrial power supply, communication power supply, and home appliance power supply.
2. **Industrial power management and motor drive**
In the field of industrial automation and power drive, SSH8N70-VB can be used in variable frequency drives, inverters, and high-power motor drive systems. This MOSFET has a high current carrying capacity (maximum 11A) and can stably control the starting, speed regulation, and braking of the motor. It is suitable for industrial applications such as robots, automation equipment, and power tools.
3. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
In electric vehicles (such as electric cars, electric motorcycles) and their charging systems, the SSH8N70-VB can be used in battery management systems (BMS). Its high voltage tolerance and low on-resistance help effectively manage the battery charging and discharging process, ensure system efficiency and extend battery life. It can support high current rapid charging and discharging processes to ensure stable operation of electric vehicles.
4. **Renewable Energy Systems (Solar, Wind Inverters)**
In renewable energy systems, especially solar and wind power generation systems, the SSH8N70-VB is used for power conversion and voltage regulation. Solar inverters often need to handle high voltages and high currents. This MOSFET provides high-efficiency energy conversion and can stably withstand the high current working environment of the inverter, helping to achieve higher energy efficiency.
5. **Battery Charger and UPS System**
SSH8N70-VB is suitable for battery charger and uninterruptible power supply (UPS) system. Its high voltage and high current handling capabilities are particularly suitable for efficient battery charging and power storage systems. It can effectively reduce power loss during the conversion process and maintain system stability. It is widely used in home appliances, power backup, emergency power supply and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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