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SSH8N60-VB Product details
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**SSH8N60-VB MOSFET Product Introduction**
SSH8N60-VB is an N-channel MOSFET in TO3P package, designed for medium and high voltage power supply and power conversion applications. It has a drain-source withstand voltage (Vds) of 600V, suitable for medium voltage power systems, and is widely used in power conversion, motor drive and industrial control. This MOSFET adopts SJ_Multi-EPI (super junction multilayer epitaxy) technology and has a low on-resistance (Rds(on)), which is 380mΩ at Vgs = 10V, which can provide higher conversion efficiency and lower power loss. Its maximum drain current (Id) is 11A, with high current carrying capacity, suitable for high voltage applications requiring efficient energy conversion and stable switching performance.
SSH8N60-VB is an N-channel MOSFET in TO3P package, designed for medium and high voltage power supply and power conversion applications. It has a drain-source withstand voltage (Vds) of 600V, suitable for medium voltage power systems, and is widely used in power conversion, motor drive and industrial control. This MOSFET adopts SJ_Multi-EPI (super junction multilayer epitaxy) technology and has a low on-resistance (Rds(on)), which is 380mΩ at Vgs = 10V, which can provide higher conversion efficiency and lower power loss. Its maximum drain current (Id) is 11A, with high current carrying capacity, suitable for high voltage applications requiring efficient energy conversion and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
**SSH8N60-VB MOSFET detailed parameter description**
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (Vds)**: 600V
- **Gate-source voltage (Vgs)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (Rds(on))**: 380mΩ @Vgs=10V
- **Drain current (Id)**: 11A
- **Technology**: SJ_Multi-EPI (Super Junction Multilayer Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Depends on operating conditions (such as current and switching frequency)
- **Switching speed**: suitable for medium and high frequency switching applications
- **Maximum current density**: 11A drain current, suitable for high current load
- **Reliability**: focus on high reliability, suitable for working in high stress environment
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (Vds)**: 600V
- **Gate-source voltage (Vgs)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (Rds(on))**: 380mΩ @Vgs=10V
- **Drain current (Id)**: 11A
- **Technology**: SJ_Multi-EPI (Super Junction Multilayer Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Depends on operating conditions (such as current and switching frequency)
- **Switching speed**: suitable for medium and high frequency switching applications
- **Maximum current density**: 11A drain current, suitable for high current load
- **Reliability**: focus on high reliability, suitable for working in high stress environment
Domain and module applications：
**SSH8N60-VB MOSFET application fields and module examples**
1. **Power converter**:
- In AC-DC and DC-DC power converters, SSH8N60-VB MOSFET can efficiently convert power. Its 600V withstand voltage makes it suitable for medium and high voltage power systems, especially for devices such as switching power supplies and adapters. Its low on-resistance helps reduce power loss and improve conversion efficiency, and is widely used in power modules, power supply systems, and battery chargers.
2. **Motor drive system**:
- In motor drive systems, especially where large currents (such as 11A) are required, SSH8N60-VB MOSFET can provide stable current control for motors. It has advantages in efficient energy conversion and current control, and is widely used in applications such as industrial motors, robots, and variable speed drives.
3. **Photovoltaic inverter**:
- In solar power generation systems, SSH8N60-VB is suitable for photovoltaic inverters. It converts direct current (DC) generated by photovoltaic panels into alternating current (AC) and can withstand higher operating voltages, making it suitable for home, commercial and industrial photovoltaic inverters. Its low Rds(on) improves conversion efficiency and ensures long-term stable operation of the inverter.
4. **Industrial Automation Control Systems**:
- In the field of industrial automation, SSH8N60-VB MOSFET is commonly used in various power control modules, such as inverters, servo drives, power conditioners, etc. These systems require high-voltage, high-current switching elements to ensure smooth operation of mechanical systems. The high voltage tolerance and low on-resistance characteristics of this MOSFET are suitable for various industrial control applications that require efficient current conversion.
5. **Power Electronics Modules**:
- In power electronics modules, SSH8N60-VB MOSFET can be used in high-frequency switching applications, such as power factor correction (PFC) circuits and power conditioning circuits. Its stable switching performance and low on-resistance make it suitable for efficient energy management and power distribution systems. Suitable for power monitoring systems, UPS systems, and high-power conversion modules.
6. **Electric vehicles**:
- In electric vehicles (such as electric vehicles, hybrid vehicles, electric bicycles, etc.), SSH8N60-VB MOSFET acts as a key switching element in the battery management system (BMS), which controls the charge and discharge status of the battery and regulates the power output of the motor. It provides efficient energy conversion and current control in the power system of electric vehicles, supporting the efficient operation of high-voltage batteries and motor systems.
7. **High-frequency switching power supply**:
- The fast switching characteristics and low on-resistance of SSH8N60-VB make it suitable for high-frequency switching power supply applications. It is widely used in efficient power factor correction (PFC) circuits, chargers, and power regulators. Suitable for power electronic equipment that requires efficient power conversion and low power loss.
1. **Power converter**:
- In AC-DC and DC-DC power converters, SSH8N60-VB MOSFET can efficiently convert power. Its 600V withstand voltage makes it suitable for medium and high voltage power systems, especially for devices such as switching power supplies and adapters. Its low on-resistance helps reduce power loss and improve conversion efficiency, and is widely used in power modules, power supply systems, and battery chargers.
2. **Motor drive system**:
- In motor drive systems, especially where large currents (such as 11A) are required, SSH8N60-VB MOSFET can provide stable current control for motors. It has advantages in efficient energy conversion and current control, and is widely used in applications such as industrial motors, robots, and variable speed drives.
3. **Photovoltaic inverter**:
- In solar power generation systems, SSH8N60-VB is suitable for photovoltaic inverters. It converts direct current (DC) generated by photovoltaic panels into alternating current (AC) and can withstand higher operating voltages, making it suitable for home, commercial and industrial photovoltaic inverters. Its low Rds(on) improves conversion efficiency and ensures long-term stable operation of the inverter.
4. **Industrial Automation Control Systems**:
- In the field of industrial automation, SSH8N60-VB MOSFET is commonly used in various power control modules, such as inverters, servo drives, power conditioners, etc. These systems require high-voltage, high-current switching elements to ensure smooth operation of mechanical systems. The high voltage tolerance and low on-resistance characteristics of this MOSFET are suitable for various industrial control applications that require efficient current conversion.
5. **Power Electronics Modules**:
- In power electronics modules, SSH8N60-VB MOSFET can be used in high-frequency switching applications, such as power factor correction (PFC) circuits and power conditioning circuits. Its stable switching performance and low on-resistance make it suitable for efficient energy management and power distribution systems. Suitable for power monitoring systems, UPS systems, and high-power conversion modules.
6. **Electric vehicles**:
- In electric vehicles (such as electric vehicles, hybrid vehicles, electric bicycles, etc.), SSH8N60-VB MOSFET acts as a key switching element in the battery management system (BMS), which controls the charge and discharge status of the battery and regulates the power output of the motor. It provides efficient energy conversion and current control in the power system of electric vehicles, supporting the efficient operation of high-voltage batteries and motor systems.
7. **High-frequency switching power supply**:
- The fast switching characteristics and low on-resistance of SSH8N60-VB make it suitable for high-frequency switching power supply applications. It is widely used in efficient power factor correction (PFC) circuits, chargers, and power regulators. Suitable for power electronic equipment that requires efficient power conversion and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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