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SSH6N80-VB Product details

Product introduction:

Product Introduction: SSH6N80-VB

SSH6N80-VB is a high-voltage N-channel MOSFET in TO3P package with 800V drain-source voltage (V_DS) and 11A drain current (I_D). It adopts advanced **SJ_Multi-EPI** technology and has excellent performance and reliability. The device has an R_DS(ON) of 500mΩ (at V_GS = 10V), which makes it excel in efficient power management and power conversion. With a threshold voltage (V_th) of 3.5V, SSH6N80-VB has high voltage resistance and stability, and is suitable for a variety of high-power applications requiring higher voltage and larger current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 800V 3.5V 11A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 800V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 800V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description:

- **Model**: SSH6N80-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 800V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **R_DS(ON)**: 500mΩ @ V_GS = 10V
- **Drain current (I_D)**: 11A
- **Maximum power consumption**: Due to its relatively low R_DS(ON), this MOSFET has lower energy loss in high-power applications and can effectively improve system efficiency.
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples:

1. **High-voltage power conversion**
SSH6N80-VB can be widely used in high-voltage power conversion equipment, especially in switching power supplies (SMPS). Its 800V V_DS and low R_DS(ON) characteristics enable it to provide high-efficiency energy conversion in high-power power supplies, especially suitable for industrial-grade power systems, battery chargers, etc.

2. **Uninterruptible power system (UPS)**
In uninterruptible power supplies (UPS), SSH6N80-VB is suitable for high-voltage DC-AC conversion to provide reliable power due to its high withstand voltage and good switching performance. It can stably withstand high voltage and current, ensuring the normal operation of UPS under various load conditions and avoiding equipment failures caused by power outages.

3. **Motor Drives**
In the field of motor drives, especially in the control of high-power motors, SSH6N80-VB can be used as a key switch element in motor drives. It can work stably in high-voltage environments, reduce energy loss in motor control systems, and improve the efficiency and reliability of drive systems.

4. **Electric Vehicle (EV) Charging Stations**
Electric vehicle charging stations need to handle higher voltage and current loads. As a high-voltage power switch, SSH6N80-VB can efficiently convert and control electric energy in the power conversion module of electric vehicle charging stations, improve charging speed and efficiency, and ensure safety during charging.

5. **Power transmission and high-voltage direct current (HVDC) systems**
SSH6N80-VB is also suitable for high-voltage direct current (HVDC) power transmission systems. Its high withstand voltage characteristics and stable switching performance enable it to be used as an efficient power switching element in HVDC systems, withstand high voltage environments, while reducing power losses, and ensuring the stability and efficiency of high-voltage power systems.

6. **Solar Inverters**
In solar inverters, SSH6N80-VB can be used to convert direct current from solar panels into alternating current. The high-voltage withstand capability and low on-resistance of this MOSFET enable it to have high conversion efficiency and reliability in solar photovoltaic systems, meeting the demand for efficient power conversion in renewable energy equipment.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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