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SSH6N70-VB Product details
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SSH6N70-VB Product Introduction
SSH6N70-VB is a unipolar N-channel MOSFET in TO3P package with a drain-source voltage (V_DS) of 700V, suitable for high-voltage switching and power conversion applications. This MOSFET adopts SJ_Multi-EPI technology, providing excellent conduction performance and low R_DS(ON) value, thereby reducing switching losses and improving efficiency. With a Vth (threshold voltage) of 3.5V, it can start at a lower gate-source voltage, suitable for high-efficiency and high-voltage power management systems.
SSH6N70-VB is a unipolar N-channel MOSFET in TO3P package with a drain-source voltage (V_DS) of 700V, suitable for high-voltage switching and power conversion applications. This MOSFET adopts SJ_Multi-EPI technology, providing excellent conduction performance and low R_DS(ON) value, thereby reducing switching losses and improving efficiency. With a Vth (threshold voltage) of 3.5V, it can start at a lower gate-source voltage, suitable for high-efficiency and high-voltage power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 700V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 450mΩ @V_GS = 10V
- **Maximum drain current (I_D)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 700V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 450mΩ @V_GS = 10V
- **Maximum drain current (I_D)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Power supply (PSU)**:
Due to its high V_DS (700V) and moderate R_DS(ON) value, SSH6N70-VB is very suitable for power supplies (especially high-voltage power supplies). It can withstand an operating voltage of up to 700V and is suitable for use in switching power supplies (SMPS) to provide support for stable power output.
2. **Electric vehicle charging system**:
This type of MOSFET is suitable for electric vehicle charging modules, especially in situations where high voltage and high current are required. Its 700V voltage tolerance makes it very suitable for power conversion and protection circuits in electric vehicle battery charging stations and related charging infrastructure.
3. **DC-DC converter**:
Due to its low on-resistance and high current carrying capacity, SSH6N70-VB can provide efficient power conversion in DC-DC converters. Its application can ensure stable voltage output, especially in high voltage and high current environments, such as industrial automation equipment, power electronic systems, etc.
4. **High voltage switching circuit**:
This MOSFET is suitable for various high voltage switching circuits, especially in high voltage and high power electronic devices such as inverters and power regulators. Its high breakdown voltage and low R_DS(ON) can ensure the efficiency and reliability of the circuit.
5. **Motor control system**:
Because SSH6N70-VB exhibits excellent characteristics when withstanding high current and high voltage, it is widely used in motor control systems, especially in high power driven motor drives and industrial motors.
Through these application examples, SSH6N70-VB shows its important role in industrial power electronics, high voltage power conversion and high efficiency electrical systems.
1. **Power supply (PSU)**:
Due to its high V_DS (700V) and moderate R_DS(ON) value, SSH6N70-VB is very suitable for power supplies (especially high-voltage power supplies). It can withstand an operating voltage of up to 700V and is suitable for use in switching power supplies (SMPS) to provide support for stable power output.
2. **Electric vehicle charging system**:
This type of MOSFET is suitable for electric vehicle charging modules, especially in situations where high voltage and high current are required. Its 700V voltage tolerance makes it very suitable for power conversion and protection circuits in electric vehicle battery charging stations and related charging infrastructure.
3. **DC-DC converter**:
Due to its low on-resistance and high current carrying capacity, SSH6N70-VB can provide efficient power conversion in DC-DC converters. Its application can ensure stable voltage output, especially in high voltage and high current environments, such as industrial automation equipment, power electronic systems, etc.
4. **High voltage switching circuit**:
This MOSFET is suitable for various high voltage switching circuits, especially in high voltage and high power electronic devices such as inverters and power regulators. Its high breakdown voltage and low R_DS(ON) can ensure the efficiency and reliability of the circuit.
5. **Motor control system**:
Because SSH6N70-VB exhibits excellent characteristics when withstanding high current and high voltage, it is widely used in motor control systems, especially in high power driven motor drives and industrial motors.
Through these application examples, SSH6N70-VB shows its important role in industrial power electronics, high voltage power conversion and high efficiency electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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