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SSH6N70A-VB Product details
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Product Introduction:
**SSH6N70A-VB** is an N-channel MOSFET with high withstand voltage and excellent conduction performance, using TO3P package. This product adopts advanced **SJ_Multi-EPI** technology, suitable for high voltage applications, and is widely used in switching power supplies, drive circuits and high-power electronic modules. Its rated drain-source voltage (VDS) is 700V, and it can provide up to 11A of continuous drain current, suitable for operation under conditions requiring higher voltage and current. Its low RDS(ON) characteristics and higher gate voltage (VGS) enable it to have excellent performance in applications such as power conversion and power amplification.
**SSH6N70A-VB** is an N-channel MOSFET with high withstand voltage and excellent conduction performance, using TO3P package. This product adopts advanced **SJ_Multi-EPI** technology, suitable for high voltage applications, and is widely used in switching power supplies, drive circuits and high-power electronic modules. Its rated drain-source voltage (VDS) is 700V, and it can provide up to 11A of continuous drain current, suitable for operation under conditions requiring higher voltage and current. Its low RDS(ON) characteristics and higher gate voltage (VGS) enable it to have excellent performance in applications such as power conversion and power amplification.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Model: ** SSH6N70A-VB
- **Package: ** TO3P
- **Configuration: ** Single-N-Channel
- **VDS: ** 700V
- **VGS: ** ±30V
- **Vth: ** 3.5V
- **RDS(ON): ** 450mΩ @ VGS = 10V
- **ID: ** 11A
- **Technology: ** SJ_Multi-EPI
- **Maximum power consumption: ** 125W (typical)
- **Total gate charge: ** 180nC
- **Reverse recovery time: ** 20ns (typical)
- **Turn on/off time: ** Fast switching characteristics, suitable for high frequency switching applications
- **Maximum gate-source voltage (VGS): ** ±30V
- **Model: ** SSH6N70A-VB
- **Package: ** TO3P
- **Configuration: ** Single-N-Channel
- **VDS: ** 700V
- **VGS: ** ±30V
- **Vth: ** 3.5V
- **RDS(ON): ** 450mΩ @ VGS = 10V
- **ID: ** 11A
- **Technology: ** SJ_Multi-EPI
- **Maximum power consumption: ** 125W (typical)
- **Total gate charge: ** 180nC
- **Reverse recovery time: ** 20ns (typical)
- **Turn on/off time: ** Fast switching characteristics, suitable for high frequency switching applications
- **Maximum gate-source voltage (VGS): ** ±30V
Domain and module applications：
Application fields and modules:
**1. Switching power supply module: **
The high voltage withstand capability of SSH6N70A-VB makes it particularly suitable for high-voltage power switches in switching power supplies (SMPS). Its **RDS(ON)** value is 450mΩ, which can efficiently convert electricity while maintaining low energy loss, and is particularly suitable for use in AC/DC converters, DC/DC regulated power supplies and other fields.
**2. Inverter and solar cell system: **
The high voltage tolerance and fast switching characteristics of this MOSFET make it suitable for power conversion in solar inverters and other renewable energy systems. It can effectively handle the power conversion of solar panels, work stably in high voltage environments, and provide efficient energy conversion.
**3. Electric vehicle drive system: **
In the motor drive and charging modules of electric vehicles, SSH6N70A-VB provides sufficient current carrying capacity and high voltage withstand characteristics to meet the requirements of electric vehicle power systems. It can be used in DC-AC conversion, inverters, and battery charging systems to ensure efficient and stable operation of the system.
**4. High-power LED drive circuit: **
Due to its low on-resistance and high current carrying capacity, the SSH6N70A-VB is an ideal choice for driving high-power LED lighting systems. In LED drive circuits, this MOSFET can ensure high-efficiency conversion, reduce power losses, and extend the service life of the equipment.
**5. Power transmission system: **
In high-voltage transmission systems, the SSH6N70A-VB can efficiently switch power and is suitable for high-voltage direct current transmission (HVDC) and other power switching equipment. Its voltage resistance and reliable performance make it excel in these high-demand environments.
**1. Switching power supply module: **
The high voltage withstand capability of SSH6N70A-VB makes it particularly suitable for high-voltage power switches in switching power supplies (SMPS). Its **RDS(ON)** value is 450mΩ, which can efficiently convert electricity while maintaining low energy loss, and is particularly suitable for use in AC/DC converters, DC/DC regulated power supplies and other fields.
**2. Inverter and solar cell system: **
The high voltage tolerance and fast switching characteristics of this MOSFET make it suitable for power conversion in solar inverters and other renewable energy systems. It can effectively handle the power conversion of solar panels, work stably in high voltage environments, and provide efficient energy conversion.
**3. Electric vehicle drive system: **
In the motor drive and charging modules of electric vehicles, SSH6N70A-VB provides sufficient current carrying capacity and high voltage withstand characteristics to meet the requirements of electric vehicle power systems. It can be used in DC-AC conversion, inverters, and battery charging systems to ensure efficient and stable operation of the system.
**4. High-power LED drive circuit: **
Due to its low on-resistance and high current carrying capacity, the SSH6N70A-VB is an ideal choice for driving high-power LED lighting systems. In LED drive circuits, this MOSFET can ensure high-efficiency conversion, reduce power losses, and extend the service life of the equipment.
**5. Power transmission system: **
In high-voltage transmission systems, the SSH6N70A-VB can efficiently switch power and is suitable for high-voltage direct current transmission (HVDC) and other power switching equipment. Its voltage resistance and reliable performance make it excel in these high-demand environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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