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SSH6N55-VB Product details
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**SSH6N55-VB MOSFET Product Introduction**
SSH6N55-VB is a high-voltage power MOSFET with TO3P package, suitable for high-voltage applications. This model adopts SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 600V. It can withstand higher voltage levels and is suitable for high-power, low on-resistance electronic applications. This MOSFET has a turn-on voltage (Vth) of 3.5V, high withstand voltage and low RDS(ON), which enables it to have excellent performance in a variety of power conversion, switch-mode power supplies and drive circuits. SSH6N55-VB has a low on-resistance (380mΩ@VGS=10V) and a maximum leakage current (ID) of 11A. It is suitable for industrial and consumer power modules that require large current carrying capacity and high reliability.
SSH6N55-VB is a high-voltage power MOSFET with TO3P package, suitable for high-voltage applications. This model adopts SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 600V. It can withstand higher voltage levels and is suitable for high-power, low on-resistance electronic applications. This MOSFET has a turn-on voltage (Vth) of 3.5V, high withstand voltage and low RDS(ON), which enables it to have excellent performance in a variety of power conversion, switch-mode power supplies and drive circuits. SSH6N55-VB has a low on-resistance (380mΩ@VGS=10V) and a maximum leakage current (ID) of 11A. It is suitable for industrial and consumer power modules that require large current carrying capacity and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
**SSH6N55-VB MOSFET detailed parameter description**
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Maximum power loss (Pd)**: Depends on the operating environment conditions and is usually closely related to current and temperature.
- **Junction Temperature (Tj)**: Up to 150°C
- **Vibration Resistance**: Vibration resistance and thermal stability that meet industry standards.
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Maximum power loss (Pd)**: Depends on the operating environment conditions and is usually closely related to current and temperature.
- **Junction Temperature (Tj)**: Up to 150°C
- **Vibration Resistance**: Vibration resistance and thermal stability that meet industry standards.
Domain and module applications：
**Application fields and modules**
1. **High voltage power supply module**:
Due to its high withstand voltage of up to 600V and leakage current capability of 11A, SSH6N55-VB is suitable for high voltage power supply modules, especially in industrial power supply or power tool power supply systems that require long-term and efficient operation. Its low on-resistance can reduce power loss and improve power conversion efficiency.
2. **Switch mode power supply (SMPS)**:
This MOSFET is suitable for switch mode power supply, especially for application scenarios that require high switching speed and low on-resistance. In DC-DC converters and AC-DC converters, it can effectively improve efficiency and system stability.
3. **Battery management system (BMS)**:
In the battery management system, SSH6N55-VB can be used as a switching element in the battery protection circuit to help regulate the battery charging and discharging process, ensure the safe and efficient use of the battery, especially the protection of high voltage battery packs.
4. **Electric Vehicles (EV) and Battery Chargers**:
As an indispensable switching element in the power system of electric vehicles, the SSH6N55-VB can be used in the power conversion stage of electric vehicle chargers, or as a switching element in the power battery management module of electric vehicles to ensure the stability of voltage and current.
5. **Motor Drive and Control System**:
In motor drive and control systems, the high withstand voltage and high current characteristics of this MOSFET enable it to perform well when driving high-power motors. Especially in motor control systems that require high efficiency and strict requirements, the SSH6N55-VB can be used as an efficient switching element to reduce the power consumption of the motor control module.
6. **Inverter and Solar Power Generation System**:
For solar inverters and other forms of renewable energy power generation systems, the high withstand voltage and excellent conduction performance of the SSH6N55-VB are its important advantages in such applications. It can effectively convert electricity and improve the overall efficiency and long-term stability of the system.
With the SSH6N55-VB, design engineers can achieve high-efficiency and high-reliability power conversion in multiple high-voltage power, drive and control applications.
1. **High voltage power supply module**:
Due to its high withstand voltage of up to 600V and leakage current capability of 11A, SSH6N55-VB is suitable for high voltage power supply modules, especially in industrial power supply or power tool power supply systems that require long-term and efficient operation. Its low on-resistance can reduce power loss and improve power conversion efficiency.
2. **Switch mode power supply (SMPS)**:
This MOSFET is suitable for switch mode power supply, especially for application scenarios that require high switching speed and low on-resistance. In DC-DC converters and AC-DC converters, it can effectively improve efficiency and system stability.
3. **Battery management system (BMS)**:
In the battery management system, SSH6N55-VB can be used as a switching element in the battery protection circuit to help regulate the battery charging and discharging process, ensure the safe and efficient use of the battery, especially the protection of high voltage battery packs.
4. **Electric Vehicles (EV) and Battery Chargers**:
As an indispensable switching element in the power system of electric vehicles, the SSH6N55-VB can be used in the power conversion stage of electric vehicle chargers, or as a switching element in the power battery management module of electric vehicles to ensure the stability of voltage and current.
5. **Motor Drive and Control System**:
In motor drive and control systems, the high withstand voltage and high current characteristics of this MOSFET enable it to perform well when driving high-power motors. Especially in motor control systems that require high efficiency and strict requirements, the SSH6N55-VB can be used as an efficient switching element to reduce the power consumption of the motor control module.
6. **Inverter and Solar Power Generation System**:
For solar inverters and other forms of renewable energy power generation systems, the high withstand voltage and excellent conduction performance of the SSH6N55-VB are its important advantages in such applications. It can effectively convert electricity and improve the overall efficiency and long-term stability of the system.
With the SSH6N55-VB, design engineers can achieve high-efficiency and high-reliability power conversion in multiple high-voltage power, drive and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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