SSH60N10-VB Product details
Product introduction:
SSH60N10-VB is a unipolar N-channel MOSFET in TO3P package, suitable for high-performance power conversion and switching applications. Its maximum drain-source voltage (V_DS) is 100V, the gate-source voltage (V_GS) is ±20V, and it has a low R_DS(ON) of 18mΩ (at V_GS=10V). This MOSFET has a threshold voltage (V_th) of 1.8V and a maximum drain current (I_D) of 65A. It uses advanced Trench technology to provide low on-resistance and excellent switching characteristics, suitable for high-frequency and high-efficiency power conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Model**: SSH60N10-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 18mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 65A
- **Technology**: Trench
- **Maximum power consumption**: Can be calculated according to the application environment and heat dissipation conditions, suitable for high-current high-efficiency conversion.
This MOSFET adopts Trench technology, has good switching performance, can effectively reduce energy loss, optimize switching speed, and is suitable for a variety of high-efficiency power applications.
Domain and module applications:
SSH60N10-VB MOSFET has a wide range of applications in multiple high-efficiency power electronic systems:
1. **DC-DC converter**:
- In devices such as switch mode power supplies (SMPS) and inverters, SSH60N10-VB can be used to control the switching of current, providing efficient power transmission and regulation. Its low R_DS(ON) can minimize power loss and improve the overall energy efficiency of the system.
2. **Electric vehicle (EV) battery management system**:
- In the battery management system of electric vehicles, this MOSFET can be used for power regulation and switching control of the charging/discharging process. Its high current carrying capacity and high efficiency make it an ideal choice for electric vehicle power systems.
3. **Power adapter**:
- In high-power adapters and power modules, SSH60N10-VB is used for efficient switching during power conversion, which helps to improve the energy conversion efficiency of the system, reduce heat generation, and ensure long-term stable operation.
4. **Industrial Power Supply**:
- In industrial applications, especially where stable and efficient power supply is required, such as automation equipment, power tools and transmission systems, this MOSFET can be used for high-frequency, high-efficiency switching power supplies.
5. **Solar Inverter**:
- In solar inverters, the SSH60N10-VB can be used as the main switching element responsible for converting the DC power from the solar panel into AC power. Its excellent switching performance and high voltage resistance make it an ideal choice for high-efficiency solar systems.
These application areas require high-efficiency and high-reliability switching elements, and the low on-resistance, good thermal management characteristics and high current carrying capacity provided by the SSH60N10-VB make it an excellent performer in these applications.
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