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SSH5N80-VB Product details
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Product Introduction: SSH5N80-VB
SSH5N80-VB is a high voltage N-channel MOSFET in TO3P package with 800V drain-source voltage (V_DS) and up to 11A drain current (I_D). This MOSFET adopts SJ_Multi-EPI technology, providing excellent performance, with 500mΩ R_DS(ON) (at V_GS = 10V), and its threshold voltage (V_th) is 3.5V. Due to its excellent voltage resistance and switching performance, SSH5N80-VB is particularly suitable for use in high-power, high-voltage applications.
SSH5N80-VB is a high voltage N-channel MOSFET in TO3P package with 800V drain-source voltage (V_DS) and up to 11A drain current (I_D). This MOSFET adopts SJ_Multi-EPI technology, providing excellent performance, with 500mΩ R_DS(ON) (at V_GS = 10V), and its threshold voltage (V_th) is 3.5V. Due to its excellent voltage resistance and switching performance, SSH5N80-VB is particularly suitable for use in high-power, high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Model**: SSH5N80-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 800V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **R_DS(ON)**: 500mΩ @ V_GS = 10V
- **Drain current (I_D)**: 11A
- **Technology**: SJ_Multi-EPI
- **Maximum power consumption**: Due to the relatively high R_DS(ON), special consideration of thermal management is required in high-power applications.
- **Model**: SSH5N80-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 800V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **R_DS(ON)**: 500mΩ @ V_GS = 10V
- **Drain current (I_D)**: 11A
- **Technology**: SJ_Multi-EPI
- **Maximum power consumption**: Due to the relatively high R_DS(ON), special consideration of thermal management is required in high-power applications.
Domain and module applications：
Application fields and module examples:
1. **Power Supplies**
Due to its high V_DS (800V) and low R_DS(ON), the SSH5N80-VB is ideal for high-voltage power applications such as industrial power supplies, battery chargers, and switch-mode power supplies (SMPS). In these applications, the low on-resistance of the MOSFET helps reduce energy losses, thereby improving the efficiency of the system.
2. **Switch-mode power supplies (SMPS) and UPS (uninterruptible power supply)**
In switch-mode power supplies and UPS, the SSH5N80-VB can be used to achieve efficient switching operations, especially in scenarios that require high voltages (such as 800V) and medium currents (11A). Its stable performance and low R_DS(ON) ensure high efficiency and long life of the UPS system.
3. **Industrial control and high-voltage circuits**
In some high-voltage control systems, such as inverters, motor drives, and power tool control systems, SSH5N80-VB can provide high voltage withstand capability and fast switching capability. Its low on-resistance can reduce heat generation when current passes through, improving the reliability and efficiency of the equipment.
4. **Electric vehicle (EV) charging station**
In the charging equipment of electric vehicles, SSH5N80-VB can be used for efficient power conversion. This MOSFET performs well in high-voltage charging environments, can effectively control the current flow and keep the system stable, and improve charging efficiency.
5. **Power amplifiers and radio frequency (RF) modules**
Due to its high voltage and medium current characteristics, SSH5N80-VB is also suitable for power amplifiers and RF modules, especially in communication systems with high electrical performance requirements.
This MOSFET provides stable and reliable performance in high-voltage power supplies, motor drives, charging equipment and various industrial applications, especially in environments with high voltage and high efficiency requirements.
1. **Power Supplies**
Due to its high V_DS (800V) and low R_DS(ON), the SSH5N80-VB is ideal for high-voltage power applications such as industrial power supplies, battery chargers, and switch-mode power supplies (SMPS). In these applications, the low on-resistance of the MOSFET helps reduce energy losses, thereby improving the efficiency of the system.
2. **Switch-mode power supplies (SMPS) and UPS (uninterruptible power supply)**
In switch-mode power supplies and UPS, the SSH5N80-VB can be used to achieve efficient switching operations, especially in scenarios that require high voltages (such as 800V) and medium currents (11A). Its stable performance and low R_DS(ON) ensure high efficiency and long life of the UPS system.
3. **Industrial control and high-voltage circuits**
In some high-voltage control systems, such as inverters, motor drives, and power tool control systems, SSH5N80-VB can provide high voltage withstand capability and fast switching capability. Its low on-resistance can reduce heat generation when current passes through, improving the reliability and efficiency of the equipment.
4. **Electric vehicle (EV) charging station**
In the charging equipment of electric vehicles, SSH5N80-VB can be used for efficient power conversion. This MOSFET performs well in high-voltage charging environments, can effectively control the current flow and keep the system stable, and improve charging efficiency.
5. **Power amplifiers and radio frequency (RF) modules**
Due to its high voltage and medium current characteristics, SSH5N80-VB is also suitable for power amplifiers and RF modules, especially in communication systems with high electrical performance requirements.
This MOSFET provides stable and reliable performance in high-voltage power supplies, motor drives, charging equipment and various industrial applications, especially in environments with high voltage and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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