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SSH4N60-VB Product details

Product introduction:

Product Introduction

**SSH4N60-VB** is a **single N-channel MOSFET**, which adopts **TO3P** package and is designed for high voltage and high current applications. This model has a high drain-source voltage (VDS) of **600V**, which is very suitable for switching applications in medium and high power circuits. Its maximum gate-source voltage is **±30V**, and it has a low on-resistance **(RDS(ON) = 380mΩ@VGS=10V)**, which can effectively reduce conduction losses and improve system efficiency. This MOSFET also has a high current carrying capacity (**ID = 11A**), which is suitable for high current application scenarios. This product adopts **SJ_Multi-EPI** technology, which can achieve higher switching frequency and lower switching loss, and is suitable for high-efficiency power management systems and power conversion circuits.

Due to its excellent switching performance and low conduction loss, SSH4N60-VB is suitable for a wide range of fields such as **power electronic equipment**, **motor drive**, **battery management system** (BMS), **power module**, etc., especially in scenarios with high voltage and low switching loss requirements, and has great market potential.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description

- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 380mΩ
- **Maximum leakage current (ID)**: 11A
- **Maximum power dissipation (Pd)**: 125W
- **Input capacitance (Ciss)**: 1000pF
- **Output capacitance (Coss)**: 100pF
- **Reverse transfer capacitance (Crss)**: 50pF
- **Operating temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Package size**: TO3P

Domain and module applications:

Applicable fields and modules

#### 1. **Power switching power supply (SMPS)**
SSH4N60-VB is suitable for **power switching power supply** (such as AC-DC converter, DC-DC converter, etc.), especially in **power management system**. Its **600V** high withstand voltage capability, low **RDS(ON)** and high current carrying capacity enable it to provide efficient and stable performance in the process of high power conversion. It is commonly used in **industrial power supply**, **home appliance power supply**, **communication equipment power supply**, and **high-efficiency photovoltaic inverter**.

#### 2. **Motor drive system**
In **motor drive system**, SSH4N60-VB can be used as a switching element of the motor controller, which can effectively control the starting, stopping, speed regulation and reverse operation of the motor. Due to its low on-resistance and high current carrying capacity, it is widely used in **power tools**, **home appliances** (such as air conditioners, electric fans, etc.), and **industrial automation** motor drive systems to ensure efficient operation of the equipment.

#### 3. **Battery Management System (BMS)**
In **battery management system** (BMS), SSH4N60-VB is suitable for **electric vehicles** (EV), **hybrid electric vehicles** (HEV) and **energy storage systems**. Its high withstand voltage capability and low switching loss enable it to provide more stable and efficient power management in the process of controlling battery charging and discharging. It is especially suitable for high voltage and high current battery management applications to ensure battery safety and life.

#### 4. **Industrial Power Control**
SSH4N60-VB plays a vital role in **industrial power control** systems, especially in **variable frequency drives** and **power conditioners**. Due to its high current carrying capacity and low switching losses, it can achieve precise power regulation in **high power supply systems**. It can be widely used in **power transmission systems**, **power dispatching devices**, and **high power electronic systems**, improving the efficiency and reliability of the entire power system.

#### 5. **High power electronic modules**
In **power electronic modules**, SSH4N60-VB can be used as a **power switching element** and is widely used in **power inverters**, **wireless charging devices**, and **high frequency power amplifiers**. With its high withstand voltage, low on-resistance and high switching frequency, SSH4N60-VB can provide efficient power conversion and high frequency signal processing in these modules.

#### 6. **Automotive electronics**
In **automotive electronics**, SSH4N60-VB is suitable for **electric vehicle charging systems** and **electric vehicle power systems**. This MOSFET has high voltage tolerance and high current handling capabilities, suitable for controlling battery charging current, regulating battery voltage, and ensuring efficient operation of the battery system. It is an ideal choice for **electric vehicle power systems** and **hybrid vehicle battery systems**, improving battery management performance and safety.

### Summary

**SSH4N60-VB** is a **single N-channel MOSFET** suitable for high voltage and high current applications. Its **600V** drain-source voltage and **11A** current carrying capacity make it extremely valuable in **power switching power supplies**, **motor drive systems**, **battery management systems**, **industrial power control** and other fields. Its low on-resistance and high switching efficiency make it an indispensable key component in modern high-power electronic systems, which can significantly improve system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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