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SSH10N55-VB Product details
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Product Introduction
**SSH10N55-VB** is a **single N-channel** MOSFET, using **TO3P** package, with high **drain-source voltage (VDS)** and current carrying capacity, especially suitable for high voltage, high power switching applications. The maximum drain-source voltage of this MOSFET is **600V**, and it can withstand **±30V** gate-source voltage (VGS), suitable for use in high voltage applications such as industrial power supplies, high voltage circuits and switching power supplies. Its gate voltage threshold (Vth) is **3.5V**, on-resistance (RDS(ON)) is **380mΩ** (VGS = 10V), and maximum leakage current is **11A**, which can handle higher current loads while maintaining good thermal stability and reliability.
Using **SJ_Multi-EPI** technology, SSH10N55-VB provides lower on-resistance and higher power efficiency, suitable for a variety of applications requiring high voltage and high current. Whether used as a switching element in a power system or as part of power management, this MOSFET provides excellent performance and stability.
**SSH10N55-VB** is a **single N-channel** MOSFET, using **TO3P** package, with high **drain-source voltage (VDS)** and current carrying capacity, especially suitable for high voltage, high power switching applications. The maximum drain-source voltage of this MOSFET is **600V**, and it can withstand **±30V** gate-source voltage (VGS), suitable for use in high voltage applications such as industrial power supplies, high voltage circuits and switching power supplies. Its gate voltage threshold (Vth) is **3.5V**, on-resistance (RDS(ON)) is **380mΩ** (VGS = 10V), and maximum leakage current is **11A**, which can handle higher current loads while maintaining good thermal stability and reliability.
Using **SJ_Multi-EPI** technology, SSH10N55-VB provides lower on-resistance and higher power efficiency, suitable for a variety of applications requiring high voltage and high current. Whether used as a switching element in a power system or as part of power management, this MOSFET provides excellent performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 380mΩ
- **Maximum leakage current (ID)**: 11A
- **Input capacitance (Ciss)**: 2200pF
- **Output capacitance (Coss)**: 180pF
- **Reverse transfer capacitance (Crss)**: 50pF
- **Maximum power dissipation (Pd)**: 100W
- **Operating temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Package size**: TO3P
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 380mΩ
- **Maximum leakage current (ID)**: 11A
- **Input capacitance (Ciss)**: 2200pF
- **Output capacitance (Coss)**: 180pF
- **Reverse transfer capacitance (Crss)**: 50pF
- **Maximum power dissipation (Pd)**: 100W
- **Operating temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Package size**: TO3P
Domain and module applications：
Applicable fields and modules
#### 1. **High-voltage switching power supply**
SSH10N55-VB can be widely used in **high-voltage switching power supply** (SMPS), especially in **DC-DC converter**, **AC-DC power adapter** and other devices. Due to its **600V** drain-source voltage capability, it can handle higher input voltage and power, and is suitable for power conversion systems in industrial power supplies and electrical equipment. Its low on-resistance minimizes power loss, thereby improving power efficiency.
#### 2. **Motor drive system**
In **motor drive systems**, SSH10N55-VB is widely used for switching control of **DC motors** or **brushless DC motors**. The **high current capability** (maximum 11A) and **low on-resistance** of MOSFET can ensure fast response and low energy loss in motor control. This feature makes it an ideal choice for applications such as **power tools**, **robotic systems**, **home appliance drive systems** and **electric vehicles**.
#### 3. **Battery Management System (BMS)**
In **Battery Management System** (BMS), SSH10N55-VB can be used as a current control and switching element. Especially in **high voltage battery packs** (such as lithium battery packs in electric vehicles), it is able to handle the higher voltage and current during battery charging and discharging. Due to its **600V** withstand voltage capability and **low on-resistance**, it can effectively manage battery current, ensure battery safety and extend battery life.
#### 4. **Industrial Power Control**
Due to its **high withstand voltage** and **large current carrying capacity**, SSH10N55-VB is very suitable for industrial power control systems. It can be used as a key switching element in devices such as **power converters**, **UPS power supplies** (uninterruptible power supply systems), **overcurrent protection circuits** and **power conditioners**. The low on-resistance and excellent thermal performance provided by MOSFET enable it to operate efficiently in these systems while maintaining low temperature rise and high power efficiency.
#### 5. **Automotive electronics**
In **automotive electronics** systems, SSH10N55-VB can be used for battery management, charging systems and power conversion equipment. It is widely used in **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**, and can provide efficient current control and overvoltage protection in **on-board battery management systems (BMS)**. Its high current capability and good thermal stability make it very suitable for working in harsh environmental conditions, ensuring the safety and long life of electric vehicle battery packs.
#### 6. **Power amplifier and RF applications**
The high current carrying capacity and stability of SSH10N55-VB also make it suitable for **power amplifier** and **RF (RF) applications**. In these applications, MOSFET is used as a switch or linear element, can operate at higher power levels, and is widely used in communication equipment, radar systems and other high-power RF devices.
#### 7. **Solar and wind power systems**
SSH10N55-VB can be used in **solar inverter** and **wind power generation systems**, especially in situations where efficient power conversion and control are required. It can provide reliable switching operation in **DC-AC conversion** or **maximum power point tracking (MPPT)** of solar power generation systems to ensure efficient operation of the system.
### Summary
SSH10N55-VB is a high-performance **single N-channel MOSFET** designed for high voltage, high power applications. It is suitable for a variety of high-power electronic systems, such as **switching power supply**, **motor drive**, **battery management**, **industrial power control**, **automotive electronics** and **renewable energy systems**. With its **600V** drain-source voltage, low **RDS(ON)** and high current carrying capacity, it provides an ideal switching solution for various high-efficiency power management systems.
#### 1. **High-voltage switching power supply**
SSH10N55-VB can be widely used in **high-voltage switching power supply** (SMPS), especially in **DC-DC converter**, **AC-DC power adapter** and other devices. Due to its **600V** drain-source voltage capability, it can handle higher input voltage and power, and is suitable for power conversion systems in industrial power supplies and electrical equipment. Its low on-resistance minimizes power loss, thereby improving power efficiency.
#### 2. **Motor drive system**
In **motor drive systems**, SSH10N55-VB is widely used for switching control of **DC motors** or **brushless DC motors**. The **high current capability** (maximum 11A) and **low on-resistance** of MOSFET can ensure fast response and low energy loss in motor control. This feature makes it an ideal choice for applications such as **power tools**, **robotic systems**, **home appliance drive systems** and **electric vehicles**.
#### 3. **Battery Management System (BMS)**
In **Battery Management System** (BMS), SSH10N55-VB can be used as a current control and switching element. Especially in **high voltage battery packs** (such as lithium battery packs in electric vehicles), it is able to handle the higher voltage and current during battery charging and discharging. Due to its **600V** withstand voltage capability and **low on-resistance**, it can effectively manage battery current, ensure battery safety and extend battery life.
#### 4. **Industrial Power Control**
Due to its **high withstand voltage** and **large current carrying capacity**, SSH10N55-VB is very suitable for industrial power control systems. It can be used as a key switching element in devices such as **power converters**, **UPS power supplies** (uninterruptible power supply systems), **overcurrent protection circuits** and **power conditioners**. The low on-resistance and excellent thermal performance provided by MOSFET enable it to operate efficiently in these systems while maintaining low temperature rise and high power efficiency.
#### 5. **Automotive electronics**
In **automotive electronics** systems, SSH10N55-VB can be used for battery management, charging systems and power conversion equipment. It is widely used in **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**, and can provide efficient current control and overvoltage protection in **on-board battery management systems (BMS)**. Its high current capability and good thermal stability make it very suitable for working in harsh environmental conditions, ensuring the safety and long life of electric vehicle battery packs.
#### 6. **Power amplifier and RF applications**
The high current carrying capacity and stability of SSH10N55-VB also make it suitable for **power amplifier** and **RF (RF) applications**. In these applications, MOSFET is used as a switch or linear element, can operate at higher power levels, and is widely used in communication equipment, radar systems and other high-power RF devices.
#### 7. **Solar and wind power systems**
SSH10N55-VB can be used in **solar inverter** and **wind power generation systems**, especially in situations where efficient power conversion and control are required. It can provide reliable switching operation in **DC-AC conversion** or **maximum power point tracking (MPPT)** of solar power generation systems to ensure efficient operation of the system.
### Summary
SSH10N55-VB is a high-performance **single N-channel MOSFET** designed for high voltage, high power applications. It is suitable for a variety of high-power electronic systems, such as **switching power supply**, **motor drive**, **battery management**, **industrial power control**, **automotive electronics** and **renewable energy systems**. With its **600V** drain-source voltage, low **RDS(ON)** and high current carrying capacity, it provides an ideal switching solution for various high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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