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SSG4990N-VB Product details

Product introduction:

SSG4990N-VB MOSFET Product Introduction

The SSG4990N-VB is a dual N-channel MOSFET in a SOP8 package suitable for medium and high power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and it has an excellent on-resistance (RDS(ON)) of 63mΩ @ VGS = 10V, ensuring its excellent performance in low-power applications. The threshold voltage (Vth) is 1.8V, which is suitable for reliable operation in low-voltage drive systems. The SSG4990N-VB uses Trench technology to provide excellent switching characteristics and high efficiency, especially suitable for power management, battery management, DC-DC converters and other fields. Its high current carrying capacity (ID = 5.8A) makes it an ideal choice for many medium-power electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 100V 1.8V 5.8A 63mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 100V 1.8V 5.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 100V 1.8V 5.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
SSG4990N-VB MOSFET Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 63mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5.8A
- **Maximum power dissipation**: 20W (based on temperature conditions)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Quiet leakage current**: Low static leakage current to ensure low power consumption
- **Switching characteristics**: Efficient switching response, suitable for medium and high frequency applications

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Domain and module applications:

SSG4990N-VB MOSFET Applications and Module Examples

1. **Power Management System**
In power management systems, SSG4990N-VB is widely used in DC-DC converters, battery chargers, and regulated power supply modules. Due to its low on-resistance and high current carrying capacity, it is suitable for applications that require precise current control and high-efficiency energy conversion. This makes it particularly suitable for use in power systems such as portable devices, communication equipment, and power tools to provide efficient power conversion.

2. **Load Switch**
SSG4990N-VB is suitable for load switch modules. In situations where efficient and precise control of current flow is required, this MOSFET can maintain high efficiency at low power consumption, and is particularly suitable for power switches in home appliances, consumer electronics, and industrial control systems. Its low RDS(ON) can effectively reduce energy loss and heat generation.

3. **Battery Management and Protection**
This MOSFET also performs well in battery management systems. SSG4990N-VB can be used for battery charge and discharge control, protecting the battery from overcurrent and overvoltage damage. Its dual N-channel structure enables bidirectional current flow control in complex battery systems, and is widely used in battery management modules for power tools, electric vehicles, and rechargeable devices.

4. **High-efficiency DC-DC converters**
SSG4990N-VB is widely used in high-efficiency DC-DC converters, especially in situations where stable conversion and reduced power loss are required. Its excellent on-resistance and high current handling capabilities make it a key component in electronic devices, especially in high-efficiency power modules. It can provide stable voltage output and improve system efficiency, and is suitable for automotive electronics, communication systems, and various portable devices.

5. **Automotive electronics**
In automotive electronic systems, SSG4990N-VB can be used in battery management systems (BMS), power conversion, and load control systems for electric vehicles. Its excellent switching characteristics and low power consumption enable it to work efficiently and stably in the on-board power management system, helping to ensure the best charging and discharging efficiency of the battery and extend the service life of the vehicle.

6. **Power Tools and Consumer Electronics**
In the field of power tools and consumer electronics, SSG4990N-VB can be used for power management and control modules that drive motors. Due to its low on-resistance and high current carrying capacity, it can achieve efficient power transmission, reduce power loss, and improve product life and performance.

7. **Communication Power System**
In the communication power system, SSG4990N-VB can be used in power stability assurance modules, such as power conversion modules in communication base stations and network equipment. Its excellent switching performance can ensure efficient power transmission under long-term workloads, and is suitable for communication power management that requires high reliability and high efficiency.

8. **Smart Home and IoT Devices**
In smart home and IoT devices, SSG4990N-VB can be used as a key component of high-efficiency power modules, which can effectively support the long-term operation of low-power smart devices. It is suitable for smart sockets, smart lamps, sensors and other devices, providing stable voltage and current supply through efficient power conversion to ensure stable operation of the system.

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SSG4990N-VB MOSFET is a high-efficiency, low-power switching element suitable for a wide range of power management, load switching, battery management, DC-DC conversion and other fields. With its low on-resistance and high current handling capability, it can improve system efficiency and reduce energy loss, and is particularly suitable for various medium and high power applications such as consumer electronics, power tools, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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