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SSG4424-VB Product details

Product introduction:

1. Product Introduction

**SSG4424-VB** is a high-performance N-channel MOSFET in SOP8 package, designed for low voltage and high current applications. Its maximum drain-source voltage (V_DS) is 30V, the maximum gate-source voltage (V_GS) is ±20V, the turn-on voltage (V_th) is 1.7V, the on-resistance (R_DS(ON)) is 11mΩ at a gate voltage of 4.5V, 8mΩ at a gate voltage of 10V, and the maximum drain current (I_D) is 13A. The device uses Trench technology to provide low-loss and high-efficiency switching performance, and is suitable for applications requiring high current and low conduction loss.

**SSG4424-VB** has extremely low on-resistance in current control, which can significantly reduce the power loss and heat generation of the system, and is suitable for power management, load switching, motor control and other fields. Its high performance enables it to meet the needs of modern miniaturized, high-performance electronic products, especially in applications requiring low power loss and high response speed.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
2. Detailed parameter description

| **Parameter** | **Description** |
|---------------------|---------------------------------------------|
| **Model** | SSG4424-VB |
| **Package** | SOP8 |
| **Configuration** | Single-N-Channel |
| **Maximum drain-source voltage (V_DS)** | 30V |
| **Maximum gate-source voltage (V_GS)** | ±20V |
| **Throughput voltage (V_th)** | 1.7V |
| **On-resistance (R_DS(ON))** | 11mΩ (V_GS = 4.5V) / 8mΩ (V_GS = 10V) |
| **Maximum drain current (I_D)** | 13A |
| **Technology** | Trench technology|
| **Maximum power dissipation (P_d)** | 100W |
| **Gate charge (Qg)** | 20nC (typical) |

**Temperature characteristics:**
- Operating temperature range: -55°C to 150°C
- Storage temperature range: -55°C to 150°C

**Input/output characteristics:**
- Gate charge: 20nC (typical)

Domain and module applications:

3. Applications and module examples

**a. Power management and DC-DC converters

**SSG4424-VB** is ideal for high-efficiency power management applications due to its extremely low on-resistance and excellent switching characteristics. This MOSFET can be used as a switching element in a DC-DC converter to help improve energy conversion efficiency and reduce power losses, especially for high-frequency operation. Its low conduction loss helps reduce system heat generation and extend system life.

For example, in portable power devices, chargers or battery management systems, SSG4424-VB can be used as an efficient switching element to ensure fast and stable power conversion.

**b. Electric drive systems

**SSG4424-VB**'s high current carrying capacity makes it a key component in electric drive systems. It is particularly suitable for controlling the drive current of electric motors, such as motor control systems in power tools, electric vehicles and industrial automation equipment. Its low on-resistance ensures high efficiency and low power consumption during motor driving.

For example, in the drive system of power tools, **SSG4424-VB** can efficiently control the start and stop and speed of the motor, ensuring efficient operation of the equipment and reducing energy consumption.

**c. Load Switch and Power Switching**

In load switching and power switching applications, **SSG4424-VB** can be used as a switching element to accurately control the flow of current and ensure efficient switching of the load. The low on-resistance of this MOSFET enables it to carry large currents while reducing the heat generation of the system, making it an ideal choice for load switch modules.

For example, in industrial electrical equipment, **SSG4424-VB** can be used for load switching of power supplies to ensure that the system operates under efficient and safe working conditions.

**d. Portable Devices and Battery Management Systems**

**SSG4424-VB** is an ideal choice for battery management systems in portable electronic devices. In terms of current control and overload protection during battery charging and discharging, this MOSFET can provide fast response and precise regulation to ensure efficient and safe battery use. Low on-resistance helps extend the battery life of the device and reduce heat loss.

For example, in consumer electronics such as smartphones, tablets and wireless headphones, **SSG4424-VB** can be used in battery management modules to accurately control the charging and discharging process and optimize battery performance.

**e. LED drive and lighting control**

Due to the high-efficiency switching performance of **SSG4424-VB**, it is also suitable for applications in LED drive and lighting systems. Low on-resistance and high current handling capabilities enable it to effectively drive LED modules and ensure long-term stable operation while reducing power consumption and heat generation.

For example, in LED lighting control systems, **SSG4424-VB** can be used as a switching element in the power driver module to provide precise current regulation to ensure the stability and high efficiency of LED lamps.

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**Summary: **
SSG4424-VB is a high-efficiency, low on-resistance N-channel MOSFET, which is widely used in power management, electric drive, load switching, battery management and LED lighting. Its excellent switching performance, high current carrying capacity and low power consumption make it a key switching element in modern electronic products. By using this MOSFET, the system efficiency can be significantly improved, the power loss can be reduced, and the performance and reliability of the equipment can be improved.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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