SSF80R1K3S-VB Product details
Product introduction:
**SSF80R1K3S-VB** is a high-performance unipolar N-channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET has a maximum drain-source voltage (V_DS) of 800V, can withstand a gate voltage (V_GS) of ±30V, and can provide a maximum drain current (I_D) of 5A. This product adopts SJ_Multi-EPI technology and has a low on-resistance (R_DS(ON) of 1100mΩ, when V_GS=10V), which enables it to maintain stable switching characteristics under high voltage conditions. SSF80R1K3S-VB is suitable for high-power power management, industrial automation, inverters, and battery management systems. It can provide efficient and reliable performance for these applications, reduce power losses and improve overall system efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| **Parameter** | **Description** |
|----------------------|----------------------------------------------|
| **Model** | SSF80R1K3S-VB |
| **Package** | TO220F |
| **Configuration** | Single-N-Channel |
| **Maximum drain voltage (V_DS)** | 800V |
| **Maximum gate voltage (V_GS)** | ±30V |
| **Throughput voltage (V_th)** | 3.5V |
| **On-resistance (R_DS(ON))** | 1100mΩ (V_GS = 10V) |
| **Maximum drain current (I_D)** | 5A |
| **Technology** | SJ_Multi-EPI |
| **Maximum Power Dissipation (P_d)** | 75W |
| **Gate Charge (Qg)** | 75nC (Typical) |
**Temperature Characteristics:**
- Operating Temperature Range: -55°C to 150°C
- Storage Temperature Range: -55°C to 150°C
**Input/Output Characteristics:**
- Gate Charge: 75nC (Typical)
- Gate Charge (Qg) @ V_DS = 800V: 120nC
Domain and module applications:
**a. High voltage power management **
Due to its 800V withstand voltage capability, the SSF80R1K3S-VB is very suitable for use in high voltage power management systems, especially in AC-DC converters, DC-DC converters, switching power supplies and other high power supply systems. The MOSFET provides low on-resistance and high efficiency, enabling it to effectively manage and control power, reduce power losses and improve system stability.
For example, in industrial power adapters, the SSF80R1K3S-VB can be used as a switching element for high voltage DC to AC conversion, ensuring efficient and stable operation of the power system.
**b. Electric vehicles and battery management systems **
The high withstand voltage characteristics of the SSF80R1K3S-VB make it very suitable for electric vehicles (EVs) and their battery management systems. In electric vehicles, the battery pack usually needs to withstand high voltage and high current, and the MOSFET can work stably in this high voltage environment. Through its low on-resistance, it can effectively reduce power loss in the system, extend battery life and improve energy efficiency.
For example, in the battery management system of electric vehicles, SSF80R1K3S-VB can be used as a key switching element for battery voltage regulation, load switching and current protection to optimize the battery charging and discharging process.
**c. Inverter and solar system**
SSF80R1K3S-VB is also suitable for inverter design due to its high voltage tolerance, especially in solar power generation systems. It is able to convert direct current (DC) into alternating current (AC) and maintain efficient and stable switching characteristics. Its low on-resistance reduces power loss during the conversion process and improves the overall efficiency of the system.
For example, in solar inverters, SSF80R1K3S-VB can be used as a switching element for converting DC to AC, ensuring efficient energy conversion and long-term stability of solar systems.
**d. Power protection system**
Due to its ability to withstand high voltage (800V), SSF80R1K3S-VB is suitable for power protection systems such as overvoltage protection, surge protection, etc. It can quickly respond to voltage changes in the power system, cut off the power supply in time, and prevent power equipment from being damaged by excessive voltage.
For example, in a high-voltage power system, SSF80R1K3S-VB can be used as a protection switch for power input to ensure rapid disconnection when the voltage is abnormal to avoid damage to power equipment.
**e. Industrial automation and control systems**
SSF80R1K3S-VB is also suitable for industrial automation control systems, especially in high-voltage and current control circuits. It can be used for load switching, motor control, servo drives, and other industrial applications that require precise voltage and current control.
For example, in the motor drive system of an automated production line, the SSF80R1K3S-VB can be used as a switching element to effectively control the start and stop of the motor and achieve efficient switching of the load.
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**Summary: **
SSF80R1K3S-VB is a high-efficiency N-channel MOSFET with a maximum drain voltage of 800V, suitable for multiple high-voltage applications such as high-power power management, electric vehicle battery management, inverters, solar energy systems, power protection, and industrial automation control. Its low on-resistance and high current carrying capacity enable it to provide excellent efficiency and reliability in these applications, especially under high voltage conditions.
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