SSF60R850S-VB Product details
Product introduction:
**SSF60R850S-VB** is an **N-Channel MOSFET**, using **TO220F** package, with **600V** drain-source withstand voltage (VDS) and **5A** maximum drain current (ID). This MOSFET uses **SJ_Multi-EPI** technology, with high withstand voltage capability and stable performance. Its on-resistance (RDS(ON)) is **850mΩ** (at **VGS = 10V**), suitable for high withstand voltage applications in medium and low power. SSF60R850S-VB is mainly used in **high voltage power management, switching power supplies, inverters, industrial drive circuits** and other fields.
This MOSFET is designed with excellent thermal stability and reliability, and can work normally in high voltage, high power density environments. Its **low gate voltage** and **high gate-source threshold voltage (Vth)** make it suitable for a wide range of high-frequency and high-power electronic devices, especially in **switching power supplies (SMPS)** and **high-efficiency power conversion systems**, which can effectively improve the energy efficiency of the system and reduce power loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 5A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: SSF60R850S-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **VDS** (drain-source withstand voltage): 600V
- **VGS** (gate-source voltage): ±30V
- **Vth** (gate-source threshold voltage): 3.5V
- **RDS(ON)** (on-resistance):
- **850mΩ** @ VGS = 10V
- **ID** (maximum drain current): 5A
- **Technology**: SJ_Multi-EPI
- **Power loss**: Lower switching loss and conduction loss, suitable for high-efficiency design
- **Maximum operating temperature**: -55°C to +150°C
Domain and module applications:
1. **Switching Power Supply (SMPS)**:
Due to its **high withstand voltage (600V)** and **low on-resistance**, **SSF60R850S-VB** is an ideal choice for high-efficiency **switching power supply (SMPS)** systems. In power conversion modules, this MOSFET can work stably in high voltage environments to ensure energy efficiency during power conversion.
2. **Inverter**:
This MOSFET can be widely used in **inverter** systems, especially in **solar inverter**, **wind inverter** and other renewable energy systems. Its **high withstand voltage (600V)** and stable on-resistance can effectively withstand the high voltage input in the inverter while maintaining efficient energy conversion.
3. **Power Tool Power Module**:
**SSF60R850S-VB**'s **low on-resistance** feature makes it an excellent choice for **power tool power modules**. Especially in situations where reliable and efficient power conversion is required, such as **power tools** and **electric vehicles**, it can provide a stable power supply.
4. **Power Supply System (UPS)**:
In **uninterruptible power supply (UPS)** systems, **SSF60R850S-VB** MOSFET acts as a switching element to effectively regulate power flow and ensure current stability during battery charging or power supply, thereby improving system efficiency and reliability.
5. **Power Electronic Control System**:
Suitable for **power electronic control systems**, such as **industrial motor drives** and **power conversion equipment**, this MOSFET performs well in load switching, has high switching frequency and high withstand voltage characteristics, and can adapt to the voltage and load conditions of various industrial applications.
6. **High-power conversion equipment**:
Due to its **SJ_Multi-EPI technology**, the **SSF60R850S-VB** has lower switching losses in high-power power conversion equipment, suitable for **industrial power conditioners**, **inverters** and other high-power applications. Its high-voltage capability and high-current characteristics make it suitable for switching needs in various high-power power equipment.
7. **High-frequency switching circuits**:
This MOSFET has lower switching losses in **high-frequency switching circuits**, suitable for **high-frequency power converters** and **power management systems**. It can operate stably at high frequencies and is suitable for high-efficiency power management modules in **communication systems** and **data centers**.
Technical support:
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