Product introduction：
Product Introduction: SSF3056C-VB
SSF3056C-VB is a dual N+P type MOSFET in DFN8(3X2)-B package, suitable for low voltage power management and signal conditioning applications. It integrates two transistors, one N-Channel MOSFET and one P-Channel MOSFET, with a drain-source voltage (V_DS) of ±20V and a maximum gate-source voltage (V_GS) of ±8V, suitable for a variety of power management and switching circuits. Its threshold voltage (V_th) is 0.8V (N-Channel) and -0.8V (P-Channel).
SSF3056C-VB has low on-resistance (R_DS(ON)), with N-Channel on-resistance of 36mΩ (V_GS = 4.5V) and P-Channel on-resistance of 97mΩ (V_GS = 4.5V), so it has good conduction efficiency and can effectively reduce power loss. Its drain current (I_D) is 5.9A (N-Channel) and -4.1A (P-Channel), respectively, which provides sufficient driving capability in a variety of applications.
The trench technology of this MOSFET ensures low-loss and high-efficiency working performance, suitable for various low-voltage power supplies and low-power devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
|
0.8/-0.8V |
5.9/-4.1A |
|
|
32/69mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
|
0.8/-0.8V |
5.9/-4.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
|
0.8/-0.8V |
5.9/-4.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SSF3056C-VB
- **Package type**: DFN8(3X2)-B
- **Configuration**: Dual N+P-Channel MOSFET (Dual-N+P-Channel)
- **Drain-source voltage (V_DS)**: ±20V
- **Gate-source voltage (V_GS)**: ±8V
- **Threshold voltage (V_th)**:
- N-Channel: 0.8V
- P-Channel: -0.8V
- **On-resistance (R_DS(ON))**:
- N-Channel: 36mΩ@V_GS=4.5V
- P-Channel: 97mΩ@V_GS=4.5V
- N-Channel: 32mΩ@V_GS=10V
- P-Channel: 69mΩ@V_GS=10V
- **Drain Current (I_D)**:
- N-Channel: 5.9A
- P-Channel: -4.1A
- **Operating Temperature Range**: -55°C to +150°C
- **Technology**: Trench Technology
Domain and module applications：
Applications and modules:
1. **Low-voltage power management**
The dual MOSFET configuration of the SSF3056C-VB makes it ideal for low-voltage power management circuits. It can be used as a load switch or a power control switch and is widely used in low-power power systems such as portable devices, sensor power supplies, and communication modules. Its low on-resistance characteristics help improve system efficiency and reduce power losses.
2. **Battery-powered systems**
In battery-powered systems, the low on-resistance and high current capability of the SSF3056C-VB make it an ideal choice in battery management systems (BMS). Whether used for battery charge management or battery-powered power conversion, this MOSFET can provide efficient current control and extend battery life.
3. **DC-DC converter**
In DC-DC converter modules, the SSF3056C-VB as a switching element can effectively control the current flow and provide precise voltage regulation. Its efficient switching characteristics, especially when operating at high frequencies, can significantly reduce losses and improve conversion efficiency, making it suitable for a variety of power conversion applications, such as voltage regulators, load power supplies, etc.
4. **Smart Home Devices**
SSF3056C-VB is suitable for power management modules in smart home devices. For example, in smart bulbs, smart sockets, and other small appliances, this MOSFET is used to control power switching and load regulation to ensure stable operation of the device and effective power management.
5. **Automotive Electronics**
In automotive electronic systems, SSF3056C-VB can be used in the power system and electronic control unit (ECU) of electric vehicles (EVs). Its low on-resistance and high current handling capability make it suitable for efficient switch regulation in battery management systems (BMS), providing efficient charge and discharge control of electric vehicle batteries.
6. **LED Driver Power Supply**
This MOSFET can be used in LED driver power supplies, especially when precise current control is required to maintain constant brightness. By acting as a switching device, the SSF3056C-VB can adjust the flow of current to achieve efficient power conversion while maintaining low energy losses.
7. **Portable devices**
SSF3056C-VB is particularly suitable for portable electronic products such as smartphones, portable audio and other small battery-powered devices due to its small DFN8 package and high efficiency. In these applications, low on-resistance and high current capability ensure that the device has a long operating time and low power consumption.
8. **Consumer electronics**
In consumer electronics such as flat-screen TVs, game consoles, portable chargers and other devices, the SSF3056C-VB can provide efficient power management and power conversion, optimize battery efficiency, extend device operating time, and reduce the size and weight of power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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