中文
English
SQV90N06-05-GE3-VB Product details
Back to previous pageProduct introduction：
SQV90N06-05-GE3-VB MOSFET Product Introduction
The SQV90N06-05-GE3-VB is a high-performance, low on-resistance unipolar N-channel power MOSFET in a TO262 package with a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 210A. This MOSFET is manufactured using Trench technology and has an ultra-low on-resistance (RDS(ON) of 2.8mΩ at VGS = 10V), which enables it to have lower power losses and higher efficiency under high current loads. Its high current carrying capability and low conduction losses make the SQV90N06-05-GE3-VB an ideal choice for applications such as power management, electric vehicle charging, and motor drive. The threshold voltage (Vth) of this MOSFET is 3.5V, which can provide efficient switching operation at relatively high gate voltages.
---
The SQV90N06-05-GE3-VB is a high-performance, low on-resistance unipolar N-channel power MOSFET in a TO262 package with a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 210A. This MOSFET is manufactured using Trench technology and has an ultra-low on-resistance (RDS(ON) of 2.8mΩ at VGS = 10V), which enables it to have lower power losses and higher efficiency under high current loads. Its high current carrying capability and low conduction losses make the SQV90N06-05-GE3-VB an ideal choice for applications such as power management, electric vehicle charging, and motor drive. The threshold voltage (Vth) of this MOSFET is 3.5V, which can provide efficient switching operation at relatively high gate voltages.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
SQV90N06-05-GE3-VB MOSFET parameter description
- **Package type**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the use environment)
- **Operating temperature range**: Typically -55°C to 150°C (the specific range depends on the application environment)
The SQV90N06-05-GE3-VB has a very low on-resistance of 2.8mΩ at VGS = 10V, which means it can provide very high efficiency at high currents, reducing significant heat generation. Its maximum drain-source voltage of 60V makes it suitable for medium voltage power control and power conversion.
---
- **Package type**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the use environment)
- **Operating temperature range**: Typically -55°C to 150°C (the specific range depends on the application environment)
The SQV90N06-05-GE3-VB has a very low on-resistance of 2.8mΩ at VGS = 10V, which means it can provide very high efficiency at high currents, reducing significant heat generation. Its maximum drain-source voltage of 60V makes it suitable for medium voltage power control and power conversion.
---
Domain and module applications：
SQV90N06-05-GE3-VB MOSFET application areas and module examples
1. **Power management system**
In power management systems, SQV90N06-05-GE3-VB is suitable for efficient power conversion, such as DC-DC converters and AC-DC power adapters. Its low RDS(ON) value and high current carrying capacity make it very effective in high-load and high-efficiency power management applications. It can significantly reduce conversion losses and provide higher conversion efficiency, making it very suitable for power modules that require efficient power conversion.
2. **Electric vehicle charging system**
SQV90N06-05-GE3-VB has important applications in electric vehicle charging systems, especially in the power conversion part of electric vehicle charging piles. Due to its high current carrying capacity and low on-resistance, it can effectively handle high current charging needs and reduce losses and heat, thereby improving charging efficiency and extending the service life of the equipment.
3. **Motor drive control system**
In motor drive systems, the SQV90N06-05-GE3-VB MOSFET can be used as a high-side switch in motor drive circuits. Due to its extremely low on-resistance, it can provide efficient and low-loss current control, especially suitable for high-current motor drives such as industrial motors, household appliance motors and power tools. The high current carrying capacity of this MOSFET ensures stable operation under higher loads.
4. **Renewable energy systems (such as solar inverters)**
In solar inverters, the SQV90N06-05-GE3-VB MOSFET can be used for efficient DC-AC conversion. Solar systems usually require efficient and stable power conversion to ensure stable interface between batteries and the grid. Due to its low on-resistance and high current carrying capacity, this MOSFET makes energy conversion more efficient and reduces heat loss in the system.
5. **Power Factor Correction (PFC) Circuit**
In the Power Factor Correction (PFC) circuit, the SQV90N06-05-GE3-VB MOSFET is used as an efficient switching element, which can reduce the current loss in the system and improve the overall efficiency of the power supply. Especially in power adapters and high-power devices, using this MOSFET to improve the power factor can not only reduce energy consumption, but also reduce electromagnetic interference.
6. **Intelligent Battery Management System (BMS)**
This MOSFET is also widely used in intelligent battery management systems (BMS). It can be used for battery overcharge, over-discharge protection, current control and other functions, especially in high-current battery systems. The low on-resistance enables the battery management system to provide efficient and stable current control during the charge and discharge process, extending the battery life.
7. **Industrial Automation and Robotics**
In industrial automation and robotics systems, SQV90N06-05-GE3-VB can be used as a power switch to improve the efficiency and stability of power management systems, especially industrial drive systems that require fast switching and efficient current control. Its excellent switching characteristics and low on-resistance make it suitable for high-load environments.
---
SQV90N06-05-GE3-VB MOSFET plays an important role in many high-efficiency, high-power demand applications due to its low on-resistance, extremely high current carrying capacity and trench technology. It is particularly suitable for power management, electric vehicle charging, motor drive, solar inverters, and smart battery management, and can provide excellent performance in high-efficiency, high-power applications.
1. **Power management system**
In power management systems, SQV90N06-05-GE3-VB is suitable for efficient power conversion, such as DC-DC converters and AC-DC power adapters. Its low RDS(ON) value and high current carrying capacity make it very effective in high-load and high-efficiency power management applications. It can significantly reduce conversion losses and provide higher conversion efficiency, making it very suitable for power modules that require efficient power conversion.
2. **Electric vehicle charging system**
SQV90N06-05-GE3-VB has important applications in electric vehicle charging systems, especially in the power conversion part of electric vehicle charging piles. Due to its high current carrying capacity and low on-resistance, it can effectively handle high current charging needs and reduce losses and heat, thereby improving charging efficiency and extending the service life of the equipment.
3. **Motor drive control system**
In motor drive systems, the SQV90N06-05-GE3-VB MOSFET can be used as a high-side switch in motor drive circuits. Due to its extremely low on-resistance, it can provide efficient and low-loss current control, especially suitable for high-current motor drives such as industrial motors, household appliance motors and power tools. The high current carrying capacity of this MOSFET ensures stable operation under higher loads.
4. **Renewable energy systems (such as solar inverters)**
In solar inverters, the SQV90N06-05-GE3-VB MOSFET can be used for efficient DC-AC conversion. Solar systems usually require efficient and stable power conversion to ensure stable interface between batteries and the grid. Due to its low on-resistance and high current carrying capacity, this MOSFET makes energy conversion more efficient and reduces heat loss in the system.
5. **Power Factor Correction (PFC) Circuit**
In the Power Factor Correction (PFC) circuit, the SQV90N06-05-GE3-VB MOSFET is used as an efficient switching element, which can reduce the current loss in the system and improve the overall efficiency of the power supply. Especially in power adapters and high-power devices, using this MOSFET to improve the power factor can not only reduce energy consumption, but also reduce electromagnetic interference.
6. **Intelligent Battery Management System (BMS)**
This MOSFET is also widely used in intelligent battery management systems (BMS). It can be used for battery overcharge, over-discharge protection, current control and other functions, especially in high-current battery systems. The low on-resistance enables the battery management system to provide efficient and stable current control during the charge and discharge process, extending the battery life.
7. **Industrial Automation and Robotics**
In industrial automation and robotics systems, SQV90N06-05-GE3-VB can be used as a power switch to improve the efficiency and stability of power management systems, especially industrial drive systems that require fast switching and efficient current control. Its excellent switching characteristics and low on-resistance make it suitable for high-load environments.
---
SQV90N06-05-GE3-VB MOSFET plays an important role in many high-efficiency, high-power demand applications due to its low on-resistance, extremely high current carrying capacity and trench technology. It is particularly suitable for power management, electric vehicle charging, motor drive, solar inverters, and smart battery management, and can provide excellent performance in high-efficiency, high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
