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SQR50N04-3M8-VB Product details
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Product Introduction
SQR50N04-3M8-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-current, high-efficiency power electronics applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, this MOSFET is very suitable for low to medium voltage applications. Its gate voltage threshold (Vth) is 2.5V, and it can be turned on quickly at a lower gate voltage, with excellent switching performance. Its on-resistance (RDS(ON)) is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V), respectively. When subjected to the maximum leakage current (ID=85A), it still maintains low energy loss, which is suitable for high-efficiency power management and power switching applications.
SQR50N04-3M8-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-current, high-efficiency power electronics applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, this MOSFET is very suitable for low to medium voltage applications. Its gate voltage threshold (Vth) is 2.5V, and it can be turned on quickly at a lower gate voltage, with excellent switching performance. Its on-resistance (RDS(ON)) is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V), respectively. When subjected to the maximum leakage current (ID=85A), it still maintains low energy loss, which is suitable for high-efficiency power management and power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 2.5V
- **RDS(ON)**:
- 6mΩ (VGS=4.5V）
- 5mΩ (VGS=10V）
- **ID (maximum drain current)**: 85A
- **Technology**: Trench technology, optimized on-resistance and switching speed
- **Operating temperature range**: Typically between -55°C and +150°C
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 2.5V
- **RDS(ON)**:
- 6mΩ (VGS=4.5V）
- 5mΩ (VGS=10V）
- **ID (maximum drain current)**: 85A
- **Technology**: Trench technology, optimized on-resistance and switching speed
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applicable fields and modules
With its low RDS(ON) and high current capability, the SQR50N04-3M8-VB is widely used in multiple power electronics fields, especially in scenarios that require high efficiency and low losses.
- **DC-DC converter**: This MOSFET is suitable for high-efficiency power conversion in DC-DC converters, and can maintain low conduction losses at high load currents, improving overall conversion efficiency.
- **Power management system**: Its low RDS(ON) and high current capability make it very suitable for use in power supply modules, UPS systems, and other power distribution systems, which can effectively reduce heat generation and improve energy efficiency.
- **Electric vehicles**: In the power system of electric vehicles, the SQR50N04-3M8-VB MOSFET can be used in modules such as power conversion, inverters, and charging control to ensure efficient and stable system operation.
- **Smart home devices**: This MOSFET can also play an important role in the power management system in home appliances and smart home devices, which can optimize power control and extend device life.
- **Industrial Power Control**: Suitable for industrial automation, motor drive systems, wind power generation systems and other industrial equipment that require high efficiency and high current control.
In general, the SQR50N04-3M8-VB is an ideal choice for various types of high-efficiency power systems and power conversion systems through its efficient conductive characteristics and high current capability.
With its low RDS(ON) and high current capability, the SQR50N04-3M8-VB is widely used in multiple power electronics fields, especially in scenarios that require high efficiency and low losses.
- **DC-DC converter**: This MOSFET is suitable for high-efficiency power conversion in DC-DC converters, and can maintain low conduction losses at high load currents, improving overall conversion efficiency.
- **Power management system**: Its low RDS(ON) and high current capability make it very suitable for use in power supply modules, UPS systems, and other power distribution systems, which can effectively reduce heat generation and improve energy efficiency.
- **Electric vehicles**: In the power system of electric vehicles, the SQR50N04-3M8-VB MOSFET can be used in modules such as power conversion, inverters, and charging control to ensure efficient and stable system operation.
- **Smart home devices**: This MOSFET can also play an important role in the power management system in home appliances and smart home devices, which can optimize power control and extend device life.
- **Industrial Power Control**: Suitable for industrial automation, motor drive systems, wind power generation systems and other industrial equipment that require high efficiency and high current control.
In general, the SQR50N04-3M8-VB is an ideal choice for various types of high-efficiency power systems and power conversion systems through its efficient conductive characteristics and high current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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