SQM85N15-19-GE3-VB Product details
Product introduction:
SQM85N15-19-GE3-VB is a high-performance **unipolar N-type MOSFET** in a **TO263** package, designed for high voltage and high current applications. This MOSFET provides a **150V** drain-source voltage (VDS), suitable for power conversion and power management applications requiring higher voltages. Its gate-source voltage (VGS) supports **±20V** and can operate stably under a variety of control conditions. The **RDS(ON)** of the SQM85N15-19-GE3-VB is only **7.5mΩ** @ VGS = 10V, with very low on-resistance, which can effectively reduce switching losses and improve system efficiency. It is suitable for applications such as high-power, high-efficiency switching power supplies, battery management and electric vehicles.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Through voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7.5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 128A
- **Technology**: Trench technology
Domain and module applications:
1. **Power Management and Power Conversion**:
- Due to the high **VDS (150V)** and low **RDS(ON)** of the SQM85N15-19-GE3-VB, it is very suitable for **DC-DC converters** and **AC-DC power modules**, especially in applications that need to handle high voltage and high current. It can effectively reduce energy loss and improve power conversion efficiency, especially for industrial equipment, telecommunications power supply and server power supply.
2. **Electric Vehicle Charging and Battery Management System**:
- In **Electric Vehicle (EV) Charging System** and **Battery Management System (BMS)**, the SQM85N15-19-GE3-VB can be used for efficient battery charge and discharge control. Its low RDS(ON) enables it to reduce heat generation and loss during high power charging and discharging, improve system efficiency and extend battery life.
3. **High-power switching power supply**:
- In **high-power switching power supply** (such as UPS, uninterruptible power supply system), the high current carrying capacity (128A) and low on-resistance of this MOSFET make it very suitable for handling high-power loads. It can achieve efficient and low-loss power conversion, ensuring the reliability and stability of the power system.
4. **Power tools and home appliances**:
- In the power management of **power tools** and **high-power home appliances**, SQM85N15-19-GE3-VB provides efficient current switching and power management, supports high-frequency operation and reduces heat loss, and is suitable for equipment that requires high-efficiency power conversion.
5. **Industrial automation and robot control**:
- Because this MOSFET supports high current and high voltage, SQM85N15-19-GE3-VB is also widely used in **industrial automation systems** and **robot control systems**. In these areas, fast and efficient power switch control is critical, and this type of MOSFET provides an ideal solution for such applications.
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