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SQM75P03-07-GE3-VB Product details
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SQM75P03-07-GE3-VB MOSFET Product Introduction
SQM75P03-07-GE3-VB is a high-performance, low on-resistance unipolar P-channel power MOSFET in TO263 package with high current carrying capability (maximum drain current -75A) and low on-resistance (RDS(ON) is 8mΩ at VGS = 10V). Its maximum drain-source voltage is -30V, suitable for applications requiring efficient power switching and low thermal losses. Manufactured based on Trench technology, this MOSFET provides fast switching performance and good thermal management capabilities, making it an ideal choice for power management, electric vehicle charging, motor drive and other fields.
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SQM75P03-07-GE3-VB is a high-performance, low on-resistance unipolar P-channel power MOSFET in TO263 package with high current carrying capability (maximum drain current -75A) and low on-resistance (RDS(ON) is 8mΩ at VGS = 10V). Its maximum drain-source voltage is -30V, suitable for applications requiring efficient power switching and low thermal losses. Manufactured based on Trench technology, this MOSFET provides fast switching performance and good thermal management capabilities, making it an ideal choice for power management, electric vehicle charging, motor drive and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
SQM75P03-07-GE3-VB MOSFET parameter description
- **Package type**: TO263
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (VGS = 4.5V)
- 8mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the usage environment)
- **Operating temperature range**: To be confirmed (usually -55°C to 150°C)
The threshold voltage of this MOSFET is -2.5V, which means it starts to conduct when the gate-source voltage is -2.5V, which is suitable for low-voltage drive circuit design. Its on-resistance (RDS(ON)) is very low (8mΩ) at a gate voltage of 10V, ensuring extremely low power loss and efficient current transmission.
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- **Package type**: TO263
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (VGS = 4.5V)
- 8mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the usage environment)
- **Operating temperature range**: To be confirmed (usually -55°C to 150°C)
The threshold voltage of this MOSFET is -2.5V, which means it starts to conduct when the gate-source voltage is -2.5V, which is suitable for low-voltage drive circuit design. Its on-resistance (RDS(ON)) is very low (8mΩ) at a gate voltage of 10V, ensuring extremely low power loss and efficient current transmission.
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Domain and module applications：
SQM75P03-07-GE3-VB MOSFET Applications and Module Examples
1. **Power Management System**
In high-efficiency power conversion systems, the SQM75P03-07-GE3-VB is suitable for DC-DC converters, power modules, and battery management systems. Its low RDS(ON) value and high current capability enable it to provide fast response and reduce power loss when the load changes. It can effectively reduce switching losses, improve power efficiency, and is widely used in situations that require high-efficiency current control and low heat dissipation.
2. **Electric Vehicle Charging System**
This MOSFET can play a role in the power conversion and control modules of electric vehicle charging stations. Due to its high current carrying capacity and low on-resistance, it is very suitable for battery charging management, and can work efficiently during high current charging, reduce charging time, and improve energy efficiency during charging.
3. **Motor drive control**
In the motor drive system, SQM75P03-07-GE3-VB can be used as the high-side switch of the H-bridge circuit to help achieve efficient motor control. By providing lower on-resistance, this MOSFET can effectively reduce power loss and provide fast current switching, improving the overall efficiency of the drive system, and is particularly suitable for high-power motor applications.
4. **LED drive circuit**
In the LED drive circuit, SQM75P03-07-GE3-VB can provide stable and efficient current regulation as a current switch. Due to its low on-resistance and fast switching characteristics, it can reduce power loss, maintain constant current output, ensure the stability and efficiency of the LED lighting system, and is suitable for high-performance lighting systems.
5. **Power factor correction (PFC) module**
This MOSFET can be used in power factor correction circuits, especially in AC-DC power conversion, which can effectively reduce losses and improve system stability. Its high efficiency and low heat loss characteristics make it suitable for power management modules that require precise power control and high efficiency, and are widely used in home appliances and industrial equipment.
6. **Intelligent Battery Management System (BMS)**
SQM75P03-07-GE3-VB is suitable for intelligent battery management systems, especially for applications such as overcharge, over-discharge and short-circuit protection of batteries. Its large current carrying capacity and low on-resistance ensure high efficiency during battery charging and discharging, and can effectively reduce the power consumption of the battery management system and extend the service life of the system.
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With its excellent current carrying capacity, low on-resistance and Trench technology, the SQM75P03-07-GE3-VB MOSFET is suitable for a variety of high-efficiency power conversion and current control applications, especially in the fields of electric vehicles, power management, LED drivers and battery management systems.
1. **Power Management System**
In high-efficiency power conversion systems, the SQM75P03-07-GE3-VB is suitable for DC-DC converters, power modules, and battery management systems. Its low RDS(ON) value and high current capability enable it to provide fast response and reduce power loss when the load changes. It can effectively reduce switching losses, improve power efficiency, and is widely used in situations that require high-efficiency current control and low heat dissipation.
2. **Electric Vehicle Charging System**
This MOSFET can play a role in the power conversion and control modules of electric vehicle charging stations. Due to its high current carrying capacity and low on-resistance, it is very suitable for battery charging management, and can work efficiently during high current charging, reduce charging time, and improve energy efficiency during charging.
3. **Motor drive control**
In the motor drive system, SQM75P03-07-GE3-VB can be used as the high-side switch of the H-bridge circuit to help achieve efficient motor control. By providing lower on-resistance, this MOSFET can effectively reduce power loss and provide fast current switching, improving the overall efficiency of the drive system, and is particularly suitable for high-power motor applications.
4. **LED drive circuit**
In the LED drive circuit, SQM75P03-07-GE3-VB can provide stable and efficient current regulation as a current switch. Due to its low on-resistance and fast switching characteristics, it can reduce power loss, maintain constant current output, ensure the stability and efficiency of the LED lighting system, and is suitable for high-performance lighting systems.
5. **Power factor correction (PFC) module**
This MOSFET can be used in power factor correction circuits, especially in AC-DC power conversion, which can effectively reduce losses and improve system stability. Its high efficiency and low heat loss characteristics make it suitable for power management modules that require precise power control and high efficiency, and are widely used in home appliances and industrial equipment.
6. **Intelligent Battery Management System (BMS)**
SQM75P03-07-GE3-VB is suitable for intelligent battery management systems, especially for applications such as overcharge, over-discharge and short-circuit protection of batteries. Its large current carrying capacity and low on-resistance ensure high efficiency during battery charging and discharging, and can effectively reduce the power consumption of the battery management system and extend the service life of the system.
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With its excellent current carrying capacity, low on-resistance and Trench technology, the SQM75P03-07-GE3-VB MOSFET is suitable for a variety of high-efficiency power conversion and current control applications, especially in the fields of electric vehicles, power management, LED drivers and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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