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SQM50P06-15L-GE3-VB Product details
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Product Introduction
SQM50P06-15L-GE3-VB is a high-performance P-channel MOSFET in TO263 package, designed for high-efficiency power switching applications. With a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for high current and high efficiency applications. Its gate voltage threshold (Vth) is -3V, and it has a low on-resistance (RDS(ON)), which is 8.5mΩ (VGS=4.5V) and 6.5mΩ (VGS=10V), respectively. Its maximum drain current (ID) is -110A, which is suitable for high current applications, and can withstand high power density, and is widely used in power management and power control systems.
SQM50P06-15L-GE3-VB is a high-performance P-channel MOSFET in TO263 package, designed for high-efficiency power switching applications. With a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for high current and high efficiency applications. Its gate voltage threshold (Vth) is -3V, and it has a low on-resistance (RDS(ON)), which is 8.5mΩ (VGS=4.5V) and 6.5mΩ (VGS=10V), respectively. Its maximum drain current (ID) is -110A, which is suitable for high current applications, and can withstand high power density, and is widely used in power management and power control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -110A | 6.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -3V
- **RDS(ON)**:
- 8.5mΩ (VGS=4.5V）
- 6.5mΩ (VGS=10V）
- **ID (maximum drain current)**: -110A
- **Technology**: Trench technology, optimized on-resistance and switching speed
- **Operating temperature range**: Typically between -55°C and +150°C
- **Package**: TO263
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -3V
- **RDS(ON)**:
- 8.5mΩ (VGS=4.5V）
- 6.5mΩ (VGS=10V）
- **ID (maximum drain current)**: -110A
- **Technology**: Trench technology, optimized on-resistance and switching speed
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applicable fields and modules
The high current capability and low on-resistance of the SQM50P06-15L-GE3-VB make it an important application in many fields. First, it performs well in **DC-DC converters**, especially when the load current is large, it can effectively reduce conduction losses and improve efficiency. Secondly, this MOSFET is very suitable for **inverter** applications, especially in power conversion in solar systems and electric vehicles, and can provide high-efficiency power switching.
In addition, the SQM50P06-15L-GE3-VB is also suitable for **electric vehicle charging piles**, especially the important role of P-channel MOSFET in power reverse protection, which can efficiently manage voltage reverse switching. Other typical applications include **high-efficiency power supply systems (such as UPS systems)**, and **high-current power amplifiers**, which have high requirements for MOSFET current control and efficient switching.
The high current capability and low on-resistance of the SQM50P06-15L-GE3-VB make it an important application in many fields. First, it performs well in **DC-DC converters**, especially when the load current is large, it can effectively reduce conduction losses and improve efficiency. Secondly, this MOSFET is very suitable for **inverter** applications, especially in power conversion in solar systems and electric vehicles, and can provide high-efficiency power switching.
In addition, the SQM50P06-15L-GE3-VB is also suitable for **electric vehicle charging piles**, especially the important role of P-channel MOSFET in power reverse protection, which can efficiently manage voltage reverse switching. Other typical applications include **high-efficiency power supply systems (such as UPS systems)**, and **high-current power amplifiers**, which have high requirements for MOSFET current control and efficient switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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