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SQM50P03-07-GE3-VB Product details
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SQM50P03-07-GE3-VB is a high-efficiency single P-Channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is -30V, maximum gate-source voltage (VGS) is ±20V, Vth (threshold voltage) is -2.5V, RDS(ON) is only 8mΩ at VGS=10V, 11mΩ at VGS=4.5V, and can provide a maximum continuous drain current of -75A. This MOSFET adopts advanced Trench technology, has low on-resistance and fast switching characteristics, can significantly reduce power loss, and is widely used in high-efficiency circuits such as power management, inverters and motor drives.
**
SQM50P03-07-GE3-VB is a high-efficiency single P-Channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is -30V, maximum gate-source voltage (VGS) is ±20V, Vth (threshold voltage) is -2.5V, RDS(ON) is only 8mΩ at VGS=10V, 11mΩ at VGS=4.5V, and can provide a maximum continuous drain current of -75A. This MOSFET adopts advanced Trench technology, has low on-resistance and fast switching characteristics, can significantly reduce power loss, and is widely used in high-efficiency circuits such as power management, inverters and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
**
- **Package type**: TO263
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (at VGS=4.5V)
- 8mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -75A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C (typical)
- **Thermal resistance (RθJC)**: 4.5°C/W (typical)
**Product
- **Package type**: TO263
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (at VGS=4.5V)
- 8mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -75A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C (typical)
- **Thermal resistance (RθJC)**: 4.5°C/W (typical)
**Product
Domain and module applications：
Examples:
1. Electric Vehicles (EV) and Battery Management Systems (BMS)
In the battery management system (BMS) of electric vehicles, the SQM50P03-07-GE3-VB MOSFET is used as a high-efficiency switching element, which is particularly suitable for battery charge and discharge control. Its low RDS(ON) characteristics ensure minimal loss during current flow, improve the overall efficiency of the battery pack and the response speed of the power system, and are suitable for high-load and fast-charging scenarios.
2. DC-DC Converter
This MOSFET has significant advantages in DC-DC converters, especially in low-voltage, high-current applications. Due to its low on-resistance, the SQM50P03-07-GE3-VB can reduce energy losses during current conversion and improve system efficiency. Its fast switching performance is particularly suitable for high-frequency DC-DC converters to achieve higher conversion efficiency and less heat loss.
3. **Power Electronic Drive and Inverter**
SQM50P03-07-GE3-VB MOSFET is suitable for inverter and motor drive systems, especially in power conversion and motor control modules. Its low RDS(ON) can reduce switching losses and heat generation, thereby improving the energy efficiency and reliability of the system, and is widely used in industrial automation and power drive systems.
4. **Power Factor Correction (PFC) Circuit**
In the power factor correction circuit, SQM50P03-07-GE3-VB MOSFET can effectively improve power efficiency and reduce switching losses. Its low on-resistance and high current carrying capacity make it an ideal choice for improving the performance of PFC circuits, especially for power systems that require high efficiency and miniaturization, such as home appliances and computer power supplies.
5. **Power Management and Switching Power Modules**
In various power management systems and switching power modules, the SQM50P03-07-GE3-VB MOSFET can be used for efficient current switching and control circuits. Due to its low RDS(ON) and high current handling capability, this MOSFET excels in voltage stability, current regulation, and thermal management, and is suitable for power modules such as battery chargers and LED drivers.
6. **Automation and Power Control**
SQM50P03-07-GE3-VB plays an important role in industrial automation and power control systems, especially in high-efficiency power systems. Its high current handling capability and low conduction loss make this MOSFET suitable for power conversion, switching control, and equipment that requires low temperature rise and high efficiency.
**Summary**
SQM50P03-07-GE3-VB MOSFET is a single P-Channel MOSFET designed for high-efficiency power management, inverters, motor drives and other applications. With its low on-resistance, fast switching performance and high current carrying capacity, it is widely used in electric vehicles, DC-DC converters, power electronic drives and switching power supply modules, providing excellent efficiency and reliability.
1. Electric Vehicles (EV) and Battery Management Systems (BMS)
In the battery management system (BMS) of electric vehicles, the SQM50P03-07-GE3-VB MOSFET is used as a high-efficiency switching element, which is particularly suitable for battery charge and discharge control. Its low RDS(ON) characteristics ensure minimal loss during current flow, improve the overall efficiency of the battery pack and the response speed of the power system, and are suitable for high-load and fast-charging scenarios.
2. DC-DC Converter
This MOSFET has significant advantages in DC-DC converters, especially in low-voltage, high-current applications. Due to its low on-resistance, the SQM50P03-07-GE3-VB can reduce energy losses during current conversion and improve system efficiency. Its fast switching performance is particularly suitable for high-frequency DC-DC converters to achieve higher conversion efficiency and less heat loss.
3. **Power Electronic Drive and Inverter**
SQM50P03-07-GE3-VB MOSFET is suitable for inverter and motor drive systems, especially in power conversion and motor control modules. Its low RDS(ON) can reduce switching losses and heat generation, thereby improving the energy efficiency and reliability of the system, and is widely used in industrial automation and power drive systems.
4. **Power Factor Correction (PFC) Circuit**
In the power factor correction circuit, SQM50P03-07-GE3-VB MOSFET can effectively improve power efficiency and reduce switching losses. Its low on-resistance and high current carrying capacity make it an ideal choice for improving the performance of PFC circuits, especially for power systems that require high efficiency and miniaturization, such as home appliances and computer power supplies.
5. **Power Management and Switching Power Modules**
In various power management systems and switching power modules, the SQM50P03-07-GE3-VB MOSFET can be used for efficient current switching and control circuits. Due to its low RDS(ON) and high current handling capability, this MOSFET excels in voltage stability, current regulation, and thermal management, and is suitable for power modules such as battery chargers and LED drivers.
6. **Automation and Power Control**
SQM50P03-07-GE3-VB plays an important role in industrial automation and power control systems, especially in high-efficiency power systems. Its high current handling capability and low conduction loss make this MOSFET suitable for power conversion, switching control, and equipment that requires low temperature rise and high efficiency.
**Summary**
SQM50P03-07-GE3-VB MOSFET is a single P-Channel MOSFET designed for high-efficiency power management, inverters, motor drives and other applications. With its low on-resistance, fast switching performance and high current carrying capacity, it is widely used in electric vehicles, DC-DC converters, power electronic drives and switching power supply modules, providing excellent efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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