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SQM50N04-4M1-GE3-VB Product details
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Product Introduction: SQM50N04-4M1-GE3-VB
SQM50N04-4M1-GE3-VB is a single N-channel MOSFET in a TO263 package, designed for high-power, high-efficiency power conversion and load switching applications. This MOSFET has an extremely low on-resistance (R_DS(ON)), which enables it to perform well in high-current applications. Its V_DS is up to 40V, V_GS can operate in the range of ±20V, and can withstand a maximum drain current of 150A. Manufactured using Trench technology, the SQM50N04-4M1-GE3-VB helps reduce heat generation and power loss in the overall system while providing excellent performance. This MOSFET can play an important role in various high-frequency switching power supplies, vehicle power management systems and other high-efficiency applications.
SQM50N04-4M1-GE3-VB is a single N-channel MOSFET in a TO263 package, designed for high-power, high-efficiency power conversion and load switching applications. This MOSFET has an extremely low on-resistance (R_DS(ON)), which enables it to perform well in high-current applications. Its V_DS is up to 40V, V_GS can operate in the range of ±20V, and can withstand a maximum drain current of 150A. Manufactured using Trench technology, the SQM50N04-4M1-GE3-VB helps reduce heat generation and power loss in the overall system while providing excellent performance. This MOSFET can play an important role in various high-frequency switching power supplies, vehicle power management systems and other high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: SQM50N04-4M1-GE3-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain to source voltage (V_DS)**: 40V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 2.5mΩ (V_GS = 4.5V)
- 2mΩ (V_GS = 10V)
- **Drain current (I_D)**: 150A
- **Technology**: Trench technology
- **Maximum power consumption (P_d)**: Depends on the application scenario, usually provided in the manufacturer's data sheet
- **Operating temperature range (T_j)**: -55°C to +150°C
- **Package**: TO263 package, suitable for heat dissipation and high current applications
- **Model**: SQM50N04-4M1-GE3-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain to source voltage (V_DS)**: 40V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 2.5mΩ (V_GS = 4.5V)
- 2mΩ (V_GS = 10V)
- **Drain current (I_D)**: 150A
- **Technology**: Trench technology
- **Maximum power consumption (P_d)**: Depends on the application scenario, usually provided in the manufacturer's data sheet
- **Operating temperature range (T_j)**: -55°C to +150°C
- **Package**: TO263 package, suitable for heat dissipation and high current applications
Domain and module applications：
Applications and modules:
1. **High-efficiency DC-DC converters**
The SQM50N04-4M1-GE3-VB MOSFET is very suitable for high-efficiency DC-DC converters due to its extremely low on-resistance, especially in situations where high-efficiency conversion and minimal power loss are required. This type of MOSFET can be used in intelligent power management, switch mode power supplies (SMPS), and various voltage regulation modules.
2. **Electric vehicle battery management system**
In electric vehicles (EVs), the low R_DS(ON) characteristics of the SQM50N04-4M1-GE3-VB make it an ideal choice for battery management systems and electric drive systems. The MOSFET provides high-speed switching and high current handling capabilities in battery voltage control, inverters, and motor drive modules, ensuring efficient use of battery energy and reducing power losses.
3. **Power Adapters and Battery Chargers**
The ultra-low on-resistance and high current handling capability of this MOSFET make it ideal for use in battery chargers and power adapters, especially in products that require fast and efficient power conversion. The SQM50N04-4M1-GE3-VB is widely used in charging systems such as portable devices and power tools.
4. **Industrial Automation and Power Modules**
In the field of industrial automation, the SQM50N04-4M1-GE3-VB can provide efficient power switching solutions for PLC control systems, motor control, automation equipment, and power inverters. Its low power consumption characteristics help improve the energy efficiency of industrial equipment and reduce heat dissipation issues.
5. **Renewable Energy Systems (such as Solar Inverters)**
The SQM50N04-4M1-GE3-VB can be used in solar inverters to convert and regulate DC current. With its extremely low on-resistance and high current carrying capacity, it can effectively reduce system losses and improve the efficiency of solar power generation systems, especially in high-efficiency switching applications under high-frequency and high-current conditions.
6. **High-performance computing and server power management**
SQM50N04-4M1-GE3-VB also has broad application prospects in power management modules of data centers and high-performance computers. Its low on-resistance helps to reduce power losses under high-frequency and high-load conditions and optimize the efficiency of the overall power system.
Overall, the SQM50N04-4M1-GE3-VB MOSFET, with its low on-resistance, ultra-high current carrying capacity and Trench technology, is very suitable for high-efficiency switching power supplies, on-board power management, battery charging systems, industrial automation and renewable energy applications, meeting the needs of modern power electronics systems for efficient, reliable and high-power processing.
1. **High-efficiency DC-DC converters**
The SQM50N04-4M1-GE3-VB MOSFET is very suitable for high-efficiency DC-DC converters due to its extremely low on-resistance, especially in situations where high-efficiency conversion and minimal power loss are required. This type of MOSFET can be used in intelligent power management, switch mode power supplies (SMPS), and various voltage regulation modules.
2. **Electric vehicle battery management system**
In electric vehicles (EVs), the low R_DS(ON) characteristics of the SQM50N04-4M1-GE3-VB make it an ideal choice for battery management systems and electric drive systems. The MOSFET provides high-speed switching and high current handling capabilities in battery voltage control, inverters, and motor drive modules, ensuring efficient use of battery energy and reducing power losses.
3. **Power Adapters and Battery Chargers**
The ultra-low on-resistance and high current handling capability of this MOSFET make it ideal for use in battery chargers and power adapters, especially in products that require fast and efficient power conversion. The SQM50N04-4M1-GE3-VB is widely used in charging systems such as portable devices and power tools.
4. **Industrial Automation and Power Modules**
In the field of industrial automation, the SQM50N04-4M1-GE3-VB can provide efficient power switching solutions for PLC control systems, motor control, automation equipment, and power inverters. Its low power consumption characteristics help improve the energy efficiency of industrial equipment and reduce heat dissipation issues.
5. **Renewable Energy Systems (such as Solar Inverters)**
The SQM50N04-4M1-GE3-VB can be used in solar inverters to convert and regulate DC current. With its extremely low on-resistance and high current carrying capacity, it can effectively reduce system losses and improve the efficiency of solar power generation systems, especially in high-efficiency switching applications under high-frequency and high-current conditions.
6. **High-performance computing and server power management**
SQM50N04-4M1-GE3-VB also has broad application prospects in power management modules of data centers and high-performance computers. Its low on-resistance helps to reduce power losses under high-frequency and high-load conditions and optimize the efficiency of the overall power system.
Overall, the SQM50N04-4M1-GE3-VB MOSFET, with its low on-resistance, ultra-high current carrying capacity and Trench technology, is very suitable for high-efficiency switching power supplies, on-board power management, battery charging systems, industrial automation and renewable energy applications, meeting the needs of modern power electronics systems for efficient, reliable and high-power processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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