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SQM50N04-4m0L-GE3-VB Product details
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SQM50N04-4m0L-GE3-VB MOSFET Product Introduction
SQM50N04-4m0L-GE3-VB is a high-efficiency **unipolar N-type MOSFET** in a **TO263** package, designed for high current and high frequency applications. This model has an extremely low **on-resistance (RDS(ON))**, which enables it to perform well in various power transmission and switching operations, especially in the fields of power management and power conversion. Its **VDS** is 40V, which can withstand higher drain-source voltages and supports **±20V** gate voltages to adapt to a variety of control conditions. The MOSFET uses advanced **Trench technology** to provide high-efficiency switching control and extremely low conduction losses, making it suitable for applications with high current, high-efficiency power conversion and fast switching.
SQM50N04-4m0L-GE3-VB is a high-efficiency **unipolar N-type MOSFET** in a **TO263** package, designed for high current and high frequency applications. This model has an extremely low **on-resistance (RDS(ON))**, which enables it to perform well in various power transmission and switching operations, especially in the fields of power management and power conversion. Its **VDS** is 40V, which can withstand higher drain-source voltages and supports **±20V** gate voltages to adapt to a variety of control conditions. The MOSFET uses advanced **Trench technology** to provide high-efficiency switching control and extremely low conduction losses, making it suitable for applications with high current, high-efficiency power conversion and fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SQM50N04-4m0L-GE3-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Through voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Through voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
SQM50N04-4m0L-GE3-VB MOSFET Applications and Module Examples
1. **Power Management and Voltage Conversion**:
- Due to its extremely low RDS(ON) value, this MOSFET is particularly suitable for **DC-DC converters**, whether in power distribution, voltage-stabilized power supplies or buck-boost converters, which can significantly reduce power losses and improve system efficiency.
2. **Electric Vehicles and Battery Management Systems**:
- In the **charging system** and **battery management system** of electric vehicles, SQM50N04-4m0L-GE3-VB provides efficient current switching control, which can support high-current battery charging and discharging processes and reduce heat loss during the switching process, thereby improving the overall efficiency and stability of the system.
3. **High-power switching power supply**:
- This MOSFET is particularly prominent in **high-power switching power supplies** (such as uninterruptible power supplies UPS, server power modules). Its high current carrying capacity (150A) and low on-resistance enable it to cope with high power demands and provide efficient conversion and stability.
4. **Power tool drive system**:
- In the power module of **power tools**, the SQM50N04-4m0L-GE3-VB is able to handle larger currents, reduce energy loss during high-frequency switching, and provide power tools with longer battery life and better work efficiency.
5. **Wireless power transmission and RF modules**:
- Due to the low on-resistance and high switching frequency response of this MOSFET, it can play an important role in **wireless power transmission** and **RF modules**. Its low loss characteristics are very suitable for these applications with strict requirements on frequency and energy efficiency.
1. **Power Management and Voltage Conversion**:
- Due to its extremely low RDS(ON) value, this MOSFET is particularly suitable for **DC-DC converters**, whether in power distribution, voltage-stabilized power supplies or buck-boost converters, which can significantly reduce power losses and improve system efficiency.
2. **Electric Vehicles and Battery Management Systems**:
- In the **charging system** and **battery management system** of electric vehicles, SQM50N04-4m0L-GE3-VB provides efficient current switching control, which can support high-current battery charging and discharging processes and reduce heat loss during the switching process, thereby improving the overall efficiency and stability of the system.
3. **High-power switching power supply**:
- This MOSFET is particularly prominent in **high-power switching power supplies** (such as uninterruptible power supplies UPS, server power modules). Its high current carrying capacity (150A) and low on-resistance enable it to cope with high power demands and provide efficient conversion and stability.
4. **Power tool drive system**:
- In the power module of **power tools**, the SQM50N04-4m0L-GE3-VB is able to handle larger currents, reduce energy loss during high-frequency switching, and provide power tools with longer battery life and better work efficiency.
5. **Wireless power transmission and RF modules**:
- Due to the low on-resistance and high switching frequency response of this MOSFET, it can play an important role in **wireless power transmission** and **RF modules**. Its low loss characteristics are very suitable for these applications with strict requirements on frequency and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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