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SQM47N10-24L-GE3-VB Product details
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Product Introduction:
SQM47N10-24L-GE3-VB is a unipolar N-channel MOSFET in TO263 package, suitable for high-power, high-frequency power management systems and industrial applications. This model has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of 20A, and an RDS(ON) as low as 20mΩ (at VGS = 10V). It uses Trench technology, which means it has lower on-resistance, higher switching efficiency, and stronger high-temperature resistance, especially suitable for high-current drive and high-efficiency converter design.
SQM47N10-24L-GE3-VB is a unipolar N-channel MOSFET in TO263 package, suitable for high-power, high-frequency power management systems and industrial applications. This model has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of 20A, and an RDS(ON) as low as 20mΩ (at VGS = 10V). It uses Trench technology, which means it has lower on-resistance, higher switching efficiency, and stronger high-temperature resistance, especially suitable for high-current drive and high-efficiency converter design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: SQM47N10-24L-GE3-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Maximum power loss**: Suitable for high-efficiency power conversion, can withstand high workloads and ambient temperatures.
- **Model**: SQM47N10-24L-GE3-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Maximum power loss**: Suitable for high-efficiency power conversion, can withstand high workloads and ambient temperatures.
Domain and module applications：
Application fields and modules:
1. **Power supply and conversion module**
SQM47N10-24L-GE3-VB is suitable for various high-efficiency power conversion applications, such as DC-DC converters, AC-DC power supplies, and inverters. Its low on-resistance and high current handling capability make it very suitable for use in areas where efficient current conversion is required.
2. **Electric vehicle (EV) battery management system**
In the battery management system of electric vehicles, this MOSFET can handle large current switching operations and maintain high efficiency and low power consumption during battery charging and discharging, ensuring system stability and extending battery life.
3. **Industrial power supply equipment**
As a high-performance switching element, SQM47N10-24L-GE3-VB can be widely used in industrial power systems, especially in power electronic equipment such as wind turbines, solar inverters, etc., for high current and high frequency current control.
4. **High-efficiency LED driver**
In LED driver, SQM47N10-24L-GE3-VB can be used as a switch tube to help achieve efficient current control and thermal management, reduce system power loss, and improve the overall efficiency of the driver module.
5. **Power amplifier module**
In power amplifier modules that require high power and high current, SQM47N10-24L-GE3-VB can provide high efficiency and high stability, and is an ideal choice for wireless communications, radar, and other RF applications.
Through these applications, SQM47N10-24L-GE3-VB can provide powerful power management capabilities, low-power operating performance, and efficient switch control for various electronic devices and systems, and is suitable for multiple high-performance demand scenarios in various industries.
1. **Power supply and conversion module**
SQM47N10-24L-GE3-VB is suitable for various high-efficiency power conversion applications, such as DC-DC converters, AC-DC power supplies, and inverters. Its low on-resistance and high current handling capability make it very suitable for use in areas where efficient current conversion is required.
2. **Electric vehicle (EV) battery management system**
In the battery management system of electric vehicles, this MOSFET can handle large current switching operations and maintain high efficiency and low power consumption during battery charging and discharging, ensuring system stability and extending battery life.
3. **Industrial power supply equipment**
As a high-performance switching element, SQM47N10-24L-GE3-VB can be widely used in industrial power systems, especially in power electronic equipment such as wind turbines, solar inverters, etc., for high current and high frequency current control.
4. **High-efficiency LED driver**
In LED driver, SQM47N10-24L-GE3-VB can be used as a switch tube to help achieve efficient current control and thermal management, reduce system power loss, and improve the overall efficiency of the driver module.
5. **Power amplifier module**
In power amplifier modules that require high power and high current, SQM47N10-24L-GE3-VB can provide high efficiency and high stability, and is an ideal choice for wireless communications, radar, and other RF applications.
Through these applications, SQM47N10-24L-GE3-VB can provide powerful power management capabilities, low-power operating performance, and efficient switch control for various electronic devices and systems, and is suitable for multiple high-performance demand scenarios in various industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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