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SQM40P10-40L-GE3-VB Product details
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SQM40P10-40L-GE3-VB MOSFET Product Introduction
SQM40P10-40L-GE3-VB is a unipolar P-channel power MOSFET in TO263 package with a drain-source voltage (VDS) of 100V. It is widely used in applications requiring high efficiency, high current carrying capacity and low on-resistance. This MOSFET has excellent on-performance, RDS(ON) is 40mΩ at VGS = 10V and 50mΩ at VGS = 4.5V, which can provide low switching loss and heat loss. Its large current carrying capacity (maximum drain current is -37A) makes it suitable for driving applications with high current loads. Using Trench technology, it provides better switching speed and reliability, and is suitable for various power management systems that require efficient power conversion and current control.
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SQM40P10-40L-GE3-VB is a unipolar P-channel power MOSFET in TO263 package with a drain-source voltage (VDS) of 100V. It is widely used in applications requiring high efficiency, high current carrying capacity and low on-resistance. This MOSFET has excellent on-performance, RDS(ON) is 40mΩ at VGS = 10V and 50mΩ at VGS = 4.5V, which can provide low switching loss and heat loss. Its large current carrying capacity (maximum drain current is -37A) makes it suitable for driving applications with high current loads. Using Trench technology, it provides better switching speed and reliability, and is suitable for various power management systems that require efficient power conversion and current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
SQM40P10-40L-GE3-VB MOSFET parameter description
- **Package type**: TO263
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ (VGS = 4.5V)
- 40mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -37A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the usage environment)
- **Operating temperature range**: To be confirmed (usually -55°C to 150°C)
The threshold voltage (Vth) of this MOSFET is -2V, which means it starts to conduct when the gate-source voltage is 2V, which is suitable for control logic with low gate voltage. The on-resistance (RDS(ON)) is relatively low at a gate voltage of 10V, making it highly efficient and particularly suitable for power conversion and current control applications.
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- **Package type**: TO263
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ (VGS = 4.5V)
- 40mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -37A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the usage environment)
- **Operating temperature range**: To be confirmed (usually -55°C to 150°C)
The threshold voltage (Vth) of this MOSFET is -2V, which means it starts to conduct when the gate-source voltage is 2V, which is suitable for control logic with low gate voltage. The on-resistance (RDS(ON)) is relatively low at a gate voltage of 10V, making it highly efficient and particularly suitable for power conversion and current control applications.
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Domain and module applications：
SQM40P10-40L-GE3-VB MOSFET Applications and Module Examples
1. **Power Management System**
This MOSFET can be used in efficient power switch designs such as DC-DC converters, battery chargers, and power management modules. Its low RDS(ON) value and high current carrying capacity enable it to effectively reduce power losses and improve system efficiency. By adopting Trench technology, it can provide stable performance under frequent switching conditions, which is particularly suitable for scenarios requiring fast response and high reliability.
2. **Inverter Application**
In solar inverters or other high power conversion systems, the SQM40P10-40L-GE3-VB can be used in current reverse control situations. Its P-channel configuration is ideal for high-side switches in bridge inverters to help achieve efficient power conversion.
3. **Electric Vehicle (EV) Charging System**
This MOSFET can be widely used in power conversion modules for electric vehicle charging stations. Due to its high current capability and low conduction loss, it is very suitable for battery charging processes that require fast and efficient current transmission, which can effectively improve charging efficiency and reduce heat loss.
4. **High-efficiency motor drive module**
In motor control and drive systems, SQM40P10-40L-GE3-VB can be used as a high-side switch in an H-bridge circuit. With its low RDS(ON) and high current handling capability, it can ensure that the motor drive system can still maintain efficient operation under high power loads, reduce thermal effects, and extend system life.
5. **LED drive circuit**
In LED drive circuits, this MOSFET can be used as a switching element to regulate current. With its low switching loss and high current carrying capacity, it can improve the overall efficiency of LED lighting systems and reduce energy consumption, especially for applications requiring precise current control.
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SQM40P10-40L-GE3-VB, with its excellent performance and stability, is very suitable for high-efficiency power conversion and current control systems in the fields of power management, electric vehicles, LED driving, etc.
1. **Power Management System**
This MOSFET can be used in efficient power switch designs such as DC-DC converters, battery chargers, and power management modules. Its low RDS(ON) value and high current carrying capacity enable it to effectively reduce power losses and improve system efficiency. By adopting Trench technology, it can provide stable performance under frequent switching conditions, which is particularly suitable for scenarios requiring fast response and high reliability.
2. **Inverter Application**
In solar inverters or other high power conversion systems, the SQM40P10-40L-GE3-VB can be used in current reverse control situations. Its P-channel configuration is ideal for high-side switches in bridge inverters to help achieve efficient power conversion.
3. **Electric Vehicle (EV) Charging System**
This MOSFET can be widely used in power conversion modules for electric vehicle charging stations. Due to its high current capability and low conduction loss, it is very suitable for battery charging processes that require fast and efficient current transmission, which can effectively improve charging efficiency and reduce heat loss.
4. **High-efficiency motor drive module**
In motor control and drive systems, SQM40P10-40L-GE3-VB can be used as a high-side switch in an H-bridge circuit. With its low RDS(ON) and high current handling capability, it can ensure that the motor drive system can still maintain efficient operation under high power loads, reduce thermal effects, and extend system life.
5. **LED drive circuit**
In LED drive circuits, this MOSFET can be used as a switching element to regulate current. With its low switching loss and high current carrying capacity, it can improve the overall efficiency of LED lighting systems and reduce energy consumption, especially for applications requiring precise current control.
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SQM40P10-40L-GE3-VB, with its excellent performance and stability, is very suitable for high-efficiency power conversion and current control systems in the fields of power management, electric vehicles, LED driving, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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