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SQM40N10-30-GE3-VB Product details
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SQM40N10-30-GE3-VB MOSFET Detailed product introduction
**SQM40N10-30-GE3-VB** is a **single-tube-N-Channel MOSFET** in **TO263** package. This model is known for its excellent electrical characteristics and high performance, and is suitable for many fields such as high-efficiency switching power supplies, power management and current control. Based on **Trench technology**, the device provides excellent switching performance and low on-resistance, enabling it to perform well in applications that require high current handling and low power consumption. Its **VDS** (drain-source voltage) is 100V, which is suitable for high voltage and high current applications, while providing a maximum current output capability of 70A.
**SQM40N10-30-GE3-VB** is a **single-tube-N-Channel MOSFET** in **TO263** package. This model is known for its excellent electrical characteristics and high performance, and is suitable for many fields such as high-efficiency switching power supplies, power management and current control. Based on **Trench technology**, the device provides excellent switching performance and low on-resistance, enabling it to perform well in applications that require high current handling and low power consumption. Its **VDS** (drain-source voltage) is 100V, which is suitable for high voltage and high current applications, while providing a maximum current output capability of 70A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-tube-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ (VGS = 10V)
- **Maximum current (ID)**: 70A
- **Technology**: Trench
- **Maximum power loss**: Can be obtained through thermal resistance and actual application calculation.
- **Package**: TO263
- **Configuration**: Single-tube-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ (VGS = 10V)
- **Maximum current (ID)**: 70A
- **Technology**: Trench
- **Maximum power loss**: Can be obtained through thermal resistance and actual application calculation.
Domain and module applications：
Application fields and module examples
1. **Power supply system**
Due to its low on-resistance and high current carrying capacity, the SQM40N10-30-GE3-VB is particularly suitable for switching power supplies and battery management systems. These applications require efficient power conversion and low power design, especially in **high-efficiency DC-DC converters (DC-DC), **power factor correction (PFC), and **power amplifier** modules.
2. **Automotive electronics**
This MOSFET is also very suitable for automotive electrical systems, especially in battery management and motor drive modules for **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**. Its high voltage withstand characteristics and fast switching capabilities enable it to handle current regulation and power control needs at higher voltages.
3. **Battery Chargers and Uninterruptible Power Supplies (UPS)**
In battery charging and UPS systems, the SQM40N10-30-GE3-VB MOSFET provides efficient power conversion and is capable of handling high current loads. Low on-resistance means that the system can operate at higher efficiency, resulting in less energy waste and heat generation.
4. **Industrial Power Supplies and Power Modules**
This MOSFET is also ideal for high-power applications such as industrial automation, power tools, laser drives, and motor control. Its high current carrying capability and excellent thermal performance make it an ideal choice for applications that require efficient energy management.
With the SQM40N10-30-GE3-VB MOSFET, users can achieve efficient power conversion, reduce energy consumption, and improve system reliability, which is particularly suitable for high-demand fields such as power management, electric drives, and automation control.
1. **Power supply system**
Due to its low on-resistance and high current carrying capacity, the SQM40N10-30-GE3-VB is particularly suitable for switching power supplies and battery management systems. These applications require efficient power conversion and low power design, especially in **high-efficiency DC-DC converters (DC-DC), **power factor correction (PFC), and **power amplifier** modules.
2. **Automotive electronics**
This MOSFET is also very suitable for automotive electrical systems, especially in battery management and motor drive modules for **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**. Its high voltage withstand characteristics and fast switching capabilities enable it to handle current regulation and power control needs at higher voltages.
3. **Battery Chargers and Uninterruptible Power Supplies (UPS)**
In battery charging and UPS systems, the SQM40N10-30-GE3-VB MOSFET provides efficient power conversion and is capable of handling high current loads. Low on-resistance means that the system can operate at higher efficiency, resulting in less energy waste and heat generation.
4. **Industrial Power Supplies and Power Modules**
This MOSFET is also ideal for high-power applications such as industrial automation, power tools, laser drives, and motor control. Its high current carrying capability and excellent thermal performance make it an ideal choice for applications that require efficient energy management.
With the SQM40N10-30-GE3-VB MOSFET, users can achieve efficient power conversion, reduce energy consumption, and improve system reliability, which is particularly suitable for high-demand fields such as power management, electric drives, and automation control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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