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SQM25N15-52-GE3-VB Product details
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Product Introduction
SQM25N15-52-GE3-VB is a high-performance N-channel MOSFET in TO263 package, suitable for a variety of power electronics applications requiring high current and high voltage. The MOSFET has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. Its gate voltage threshold (Vth) is 3V, with excellent switching performance, which can effectively reduce energy loss. Its RDS(ON) is 35mΩ (VGS=10V), which makes it still have low conduction loss at high current (ID=45A), suitable for high-efficiency power management and power switching applications.
SQM25N15-52-GE3-VB is a high-performance N-channel MOSFET in TO263 package, suitable for a variety of power electronics applications requiring high current and high voltage. The MOSFET has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. Its gate voltage threshold (Vth) is 3V, with excellent switching performance, which can effectively reduce energy loss. Its RDS(ON) is 35mΩ (VGS=10V), which makes it still have low conduction loss at high current (ID=45A), suitable for high-efficiency power management and power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 150V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 3V
- **RDS(ON)**: 35mΩ（VGS=10V）
- **ID (maximum drain current)**: 45A
- **Technology**: Trench technology, optimized on-resistance and switching speed
- **Operating temperature range**: Typically between -55°C and +150°C
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 150V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 3V
- **RDS(ON)**: 35mΩ（VGS=10V）
- **ID (maximum drain current)**: 45A
- **Technology**: Trench technology, optimized on-resistance and switching speed
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applications and modules
The high voltage and low on-resistance characteristics of the SQM25N15-52-GE3-VB make it suitable for multiple applications. First, in **power management modules**, as a switching device in DC-DC converters, it can improve conversion efficiency and reduce heat loss. Secondly, in **electric vehicle charging systems**, the MOSFET can efficiently handle the high current load during charging. In addition, this MOSFET is also suitable for **industrial power control systems**, **high-efficiency inverters**, **UPS systems** and other fields, especially in high-current applications that require precise control and high efficiency.
The high voltage and low on-resistance characteristics of the SQM25N15-52-GE3-VB make it suitable for multiple applications. First, in **power management modules**, as a switching device in DC-DC converters, it can improve conversion efficiency and reduce heat loss. Secondly, in **electric vehicle charging systems**, the MOSFET can efficiently handle the high current load during charging. In addition, this MOSFET is also suitable for **industrial power control systems**, **high-efficiency inverters**, **UPS systems** and other fields, especially in high-current applications that require precise control and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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