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SQM200N04-1M8-GE3-VB Product details
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SQM200N04-1M8-GE3-VB MOSFET Product Introduction
SQM200N04-1M8-GE3-VB is a high-performance dual N-channel MOSFET in TO263-7L package with extremely low RDS(ON) value (1mΩ) and supports up to 200A continuous drain current. Its operating voltage (VDS) is 40V, suitable for applications requiring low voltage drive and high current load. The threshold voltage (Vth) of this MOSFET is 3V, which can effectively control the switch. Combined with Trench technology, it provides excellent conduction characteristics and thermal performance, and is widely used in power management systems that require high efficiency and high power density.
SQM200N04-1M8-GE3-VB is a high-performance dual N-channel MOSFET in TO263-7L package with extremely low RDS(ON) value (1mΩ) and supports up to 200A continuous drain current. Its operating voltage (VDS) is 40V, suitable for applications requiring low voltage drive and high current load. The threshold voltage (Vth) of this MOSFET is 3V, which can effectively control the switch. Combined with Trench technology, it provides excellent conduction characteristics and thermal performance, and is widely used in power management systems that require high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Drain current (ID)**: 200A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Application areas**: High power power management, automotive electric drive, battery management, motor control, solar cell management, etc.
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Drain current (ID)**: 200A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Application areas**: High power power management, automotive electric drive, battery management, motor control, solar cell management, etc.
Domain and module applications：
Applications and module examples
1. **Power management module**
SQM200N04-1M8-GE3-VB can be widely used in power supply systems, especially in high power density DC-DC converters, DC power management modules and voltage converters. Due to its extremely low on-resistance and high current handling capability, it can provide efficient power conversion, reduce losses and ensure efficient operation of the power supply.
2. **Electric vehicle battery management system (BMS)**
In the battery management system of electric vehicles, this MOSFET can provide low-loss and efficient switching during battery charging and discharging. Its drain current of up to 200A and drain-source voltage of up to 40V are suitable for controlling the charging and discharging path of the battery, supporting efficient management of the battery.
3. **Motor drive control**
In motor drive systems, SQM200N04-1M8-GE3-VB can be used as a high-power switching element in the drive circuit. It enables fast switching transitions in motor controllers, controls the current flow to the motor, and provides extremely low conduction losses, thereby improving the efficiency of the system.
4. **Solar power generation system**
In solar inverter systems, this MOSFET can be used as a key switching element to optimize power conversion efficiency. Due to its high-efficiency switching characteristics and low RDS(ON), it can be used to regulate the current flow from solar panels to batteries or the grid to ensure efficient operation of the system.
5. **High-frequency switching power supply applications**
In high-frequency switching power supplies, SQM200N04-1M8-GE3-VB has excellent high-frequency switching performance and can be applied to high-efficiency power supply designs such as power adapters, chargers, LED drivers, etc. Its fast response and low conduction losses help optimize the efficiency of switching power supplies.
Through these application scenarios, it can be seen that SQM200N04-1M8-GE3-VB has excellent performance in many fields, especially in high-power density and high-efficiency power management systems.
1. **Power management module**
SQM200N04-1M8-GE3-VB can be widely used in power supply systems, especially in high power density DC-DC converters, DC power management modules and voltage converters. Due to its extremely low on-resistance and high current handling capability, it can provide efficient power conversion, reduce losses and ensure efficient operation of the power supply.
2. **Electric vehicle battery management system (BMS)**
In the battery management system of electric vehicles, this MOSFET can provide low-loss and efficient switching during battery charging and discharging. Its drain current of up to 200A and drain-source voltage of up to 40V are suitable for controlling the charging and discharging path of the battery, supporting efficient management of the battery.
3. **Motor drive control**
In motor drive systems, SQM200N04-1M8-GE3-VB can be used as a high-power switching element in the drive circuit. It enables fast switching transitions in motor controllers, controls the current flow to the motor, and provides extremely low conduction losses, thereby improving the efficiency of the system.
4. **Solar power generation system**
In solar inverter systems, this MOSFET can be used as a key switching element to optimize power conversion efficiency. Due to its high-efficiency switching characteristics and low RDS(ON), it can be used to regulate the current flow from solar panels to batteries or the grid to ensure efficient operation of the system.
5. **High-frequency switching power supply applications**
In high-frequency switching power supplies, SQM200N04-1M8-GE3-VB has excellent high-frequency switching performance and can be applied to high-efficiency power supply designs such as power adapters, chargers, LED drivers, etc. Its fast response and low conduction losses help optimize the efficiency of switching power supplies.
Through these application scenarios, it can be seen that SQM200N04-1M8-GE3-VB has excellent performance in many fields, especially in high-power density and high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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