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SQM200N04-1M7L-GE3-VB Product details
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SQM200N04-1M7L-GE3-VB is a high-performance dual N-Channel MOSFET in TO263-7L package, designed for high current applications, with low on-resistance (RDS(ON)) and high current carrying capacity. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum gate-source voltage (VGS) is ±20V, the Vth (threshold voltage) is 3V, the RDS(ON) is 1mΩ at VGS=10V, and it can provide a continuous drain current of up to 200A. The application of its Trench technology ensures low switching loss, high efficiency, fast response and low temperature rise, making it have broad application prospects in various high power density fields such as power management, electric vehicles, switching power supplies, etc.
**
SQM200N04-1M7L-GE3-VB is a high-performance dual N-Channel MOSFET in TO263-7L package, designed for high current applications, with low on-resistance (RDS(ON)) and high current carrying capacity. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum gate-source voltage (VGS) is ±20V, the Vth (threshold voltage) is 3V, the RDS(ON) is 1mΩ at VGS=10V, and it can provide a continuous drain current of up to 200A. The application of its Trench technology ensures low switching loss, high efficiency, fast response and low temperature rise, making it have broad application prospects in various high power density fields such as power management, electric vehicles, switching power supplies, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
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- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 200A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C (usually determined based on specific application or environment)
- **Thermal resistance (RθJC)**: 3.0°C/W (typical)
**Product
- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 200A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C (usually determined based on specific application or environment)
- **Thermal resistance (RθJC)**: 3.0°C/W (typical)
**Product
Domain and module applications：
Examples:
1. Electric Vehicles (EV) and Battery Management Systems (BMS)
SQM200N04-1M7L-GE3-VB MOSFET is suitable for battery management systems (BMS) in electric vehicles, especially in the charge and discharge management of high-power battery packs. Its low RDS(ON) characteristics ensure high-efficiency current conduction and reduce heat loss, thereby improving the efficiency of the overall battery system. It can handle large currents during battery charging and discharging, ensuring safe operation of the battery.
2. DC-DC Converter
In high-efficiency DC-DC converters, SQM200N04-1M7L-GE3-VB MOSFET can significantly improve conversion efficiency as a switching element. Due to its low on-resistance (RDS(ON)) characteristics, it can reduce power losses, especially under high current load conditions, reducing the need for heat dissipation, and is suitable for power conversion and voltage regulation modules in 12V or 24V systems.
3. **Industrial Power and Power Management**
In the power management of industrial equipment, SQM200N04-1M7L-GE3-VB MOSFET is often used as a switching element in high-power power management modules. Due to its high current carrying capacity and low conduction loss, it is suitable for uninterruptible power supply (UPS) and high-power power supply systems, and can effectively support high-load work while ensuring system stability and reliability.
4. **Server and Data Center Power**
In the power management system of servers and data centers, SQM200N04-1M7L-GE3-VB MOSFET can be used in power modules as a switching element, especially in the process of efficient power conversion and power supply. Through its high current handling capability and fast switching characteristics, it can effectively improve energy efficiency and reduce unnecessary energy loss, especially in high-density, high-power working environments.
5. **Switching power supply module**
SQM200N04-1M7L-GE3-VB MOSFET can be used in the switching power supply module of AC-DC converter to provide efficient current conversion in high-frequency switching operation. Its Trench technology can effectively reduce switching losses and heat generation, and is suitable for power conversion in computers, home appliances and other consumer electronic products.
6. **Protection circuit in power supply equipment**
This MOSFET is also widely used in the protection circuit of high-power power supply equipment. Especially when the current is too large or the voltage is abnormal, the MOSFET can respond quickly to ensure the safe operation of the circuit.
**Summary**
SQM200N04-1M7L-GE3-VB MOSFET is a high-performance dual N-Channel MOSFET. With its low on-resistance, excellent current carrying capacity and efficient Trench technology, it is widely used in electric vehicles, power management, switching power supplies, industrial power supplies and other fields. Its stability and high efficiency characteristics make it ideal for high power applications.
1. Electric Vehicles (EV) and Battery Management Systems (BMS)
SQM200N04-1M7L-GE3-VB MOSFET is suitable for battery management systems (BMS) in electric vehicles, especially in the charge and discharge management of high-power battery packs. Its low RDS(ON) characteristics ensure high-efficiency current conduction and reduce heat loss, thereby improving the efficiency of the overall battery system. It can handle large currents during battery charging and discharging, ensuring safe operation of the battery.
2. DC-DC Converter
In high-efficiency DC-DC converters, SQM200N04-1M7L-GE3-VB MOSFET can significantly improve conversion efficiency as a switching element. Due to its low on-resistance (RDS(ON)) characteristics, it can reduce power losses, especially under high current load conditions, reducing the need for heat dissipation, and is suitable for power conversion and voltage regulation modules in 12V or 24V systems.
3. **Industrial Power and Power Management**
In the power management of industrial equipment, SQM200N04-1M7L-GE3-VB MOSFET is often used as a switching element in high-power power management modules. Due to its high current carrying capacity and low conduction loss, it is suitable for uninterruptible power supply (UPS) and high-power power supply systems, and can effectively support high-load work while ensuring system stability and reliability.
4. **Server and Data Center Power**
In the power management system of servers and data centers, SQM200N04-1M7L-GE3-VB MOSFET can be used in power modules as a switching element, especially in the process of efficient power conversion and power supply. Through its high current handling capability and fast switching characteristics, it can effectively improve energy efficiency and reduce unnecessary energy loss, especially in high-density, high-power working environments.
5. **Switching power supply module**
SQM200N04-1M7L-GE3-VB MOSFET can be used in the switching power supply module of AC-DC converter to provide efficient current conversion in high-frequency switching operation. Its Trench technology can effectively reduce switching losses and heat generation, and is suitable for power conversion in computers, home appliances and other consumer electronic products.
6. **Protection circuit in power supply equipment**
This MOSFET is also widely used in the protection circuit of high-power power supply equipment. Especially when the current is too large or the voltage is abnormal, the MOSFET can respond quickly to ensure the safe operation of the circuit.
**Summary**
SQM200N04-1M7L-GE3-VB MOSFET is a high-performance dual N-Channel MOSFET. With its low on-resistance, excellent current carrying capacity and efficient Trench technology, it is widely used in electric vehicles, power management, switching power supplies, industrial power supplies and other fields. Its stability and high efficiency characteristics make it ideal for high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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