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SQM200N04-1M1L-GE3-VB Product details
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SQM200N04-1M1L-GE3-VB MOSFET Product Introduction
SQM200N04-1M1L-GE3-VB is a high-performance dual N-channel MOSFET packaged in TO263-7L. It uses innovative Trench technology and has excellent switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 40V and has a gate-source voltage (VGS) range of ±20V, which is suitable for high-current, high-efficiency power management systems. The threshold voltage (Vth) of this MOSFET is 3V, and the on-resistance (RDS(ON)) is 1mΩ at VGS=10V, which can provide a current carrying capacity of up to 200A. The low RDS(ON) characteristics of this device make it suitable for high-efficiency power management, inverters, and other applications requiring low-loss, high-frequency switching.
SQM200N04-1M1L-GE3-VB is a high-performance dual N-channel MOSFET packaged in TO263-7L. It uses innovative Trench technology and has excellent switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 40V and has a gate-source voltage (VGS) range of ±20V, which is suitable for high-current, high-efficiency power management systems. The threshold voltage (Vth) of this MOSFET is 3V, and the on-resistance (RDS(ON)) is 1mΩ at VGS=10V, which can provide a current carrying capacity of up to 200A. The low RDS(ON) characteristics of this device make it suitable for high-efficiency power management, inverters, and other applications requiring low-loss, high-frequency switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
SQM200N04-1M1L-GE3-VB MOSFET Detailed parameter description
- **Package form**: TO263-7L
- **Channel configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench technology
- **Application scope**: High-power power management, DC-DC converters, electric vehicle battery management, power inverters and other fields
- **Package form**: TO263-7L
- **Channel configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench technology
- **Application scope**: High-power power management, DC-DC converters, electric vehicle battery management, power inverters and other fields
Domain and module applications：
Application fields and module description
1. **High-power power management**: The SQM200N04-1M1L-GE3-VB MOSFET has a very low on-resistance, which can provide extremely low energy loss in power management applications. This makes it an ideal choice for efficient power conversion and energy recovery systems, especially in areas with strict requirements on power loss, such as high-efficiency power supply and server power systems.
2. **DC-DC converter**: Due to the high current carrying capacity (200A) and low on-resistance of this MOSFET, it is very suitable for use in high-efficiency DC-DC converters. The device can maintain low heat loss under high-speed switching conditions, greatly improving the conversion efficiency, and is suitable for power equipment, power tools and other industrial applications.
3. **Electric vehicle battery management system (BMS)**: In the battery management system of electric vehicles, this MOSFET can provide the necessary current support while ensuring low internal resistance and efficient power conversion, ensuring that the battery can operate efficiently during charging and discharging, and extending battery life.
4. **Power inverter**: SQM200N04-1M1L-GE3-VB is also widely used in power inverters, especially in the field of renewable energy (such as solar power generation systems). The high current handling capability and low loss characteristics of this MOSFET make it very suitable for use as the main switching element in the inverter, and it can maintain stable performance under high-frequency switching.
5. **High-efficiency electric drive system**: In electric drive systems, this MOSFET can withstand high load currents and is particularly suitable for electric vehicles, industrial robots and other fields. These applications have extremely stringent requirements for high efficiency and low losses. The SQM200N04-1M1L-GE3-VB MOSFET provides an ideal solution through its low RDS(ON) characteristics.
In summary, the SQM200N04-1M1L-GE3-VB performs well in various high-efficiency power management and high-current demand applications with its excellent switching characteristics and extremely low on-resistance. It is widely used in power conversion, battery management, and electric drive systems.
1. **High-power power management**: The SQM200N04-1M1L-GE3-VB MOSFET has a very low on-resistance, which can provide extremely low energy loss in power management applications. This makes it an ideal choice for efficient power conversion and energy recovery systems, especially in areas with strict requirements on power loss, such as high-efficiency power supply and server power systems.
2. **DC-DC converter**: Due to the high current carrying capacity (200A) and low on-resistance of this MOSFET, it is very suitable for use in high-efficiency DC-DC converters. The device can maintain low heat loss under high-speed switching conditions, greatly improving the conversion efficiency, and is suitable for power equipment, power tools and other industrial applications.
3. **Electric vehicle battery management system (BMS)**: In the battery management system of electric vehicles, this MOSFET can provide the necessary current support while ensuring low internal resistance and efficient power conversion, ensuring that the battery can operate efficiently during charging and discharging, and extending battery life.
4. **Power inverter**: SQM200N04-1M1L-GE3-VB is also widely used in power inverters, especially in the field of renewable energy (such as solar power generation systems). The high current handling capability and low loss characteristics of this MOSFET make it very suitable for use as the main switching element in the inverter, and it can maintain stable performance under high-frequency switching.
5. **High-efficiency electric drive system**: In electric drive systems, this MOSFET can withstand high load currents and is particularly suitable for electric vehicles, industrial robots and other fields. These applications have extremely stringent requirements for high efficiency and low losses. The SQM200N04-1M1L-GE3-VB MOSFET provides an ideal solution through its low RDS(ON) characteristics.
In summary, the SQM200N04-1M1L-GE3-VB performs well in various high-efficiency power management and high-current demand applications with its excellent switching characteristics and extremely low on-resistance. It is widely used in power conversion, battery management, and electric drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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