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SQM18N33-160H-GE3-VB Product details
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Product Introduction:
**SQM18N33-160H-GE3-VB** is a high-voltage single-tube N-channel MOSFET in TO263 package, suitable for high-power switching applications. This MOSFET has a drain-source voltage (VDS) tolerance of 500V, a maximum gate-source voltage of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate voltage of 10V, its on-resistance (RDS(ON)) is 140mΩ and its rated current is 30A. The use of **SJ_Multi-EPI** technology helps to improve switching efficiency and reduce switching losses, making it perform well in the field of power conversion. This model is particularly suitable for applications such as high-frequency switching power supplies, DC-DC converters, and electric vehicles (EVs).
**SQM18N33-160H-GE3-VB** is a high-voltage single-tube N-channel MOSFET in TO263 package, suitable for high-power switching applications. This MOSFET has a drain-source voltage (VDS) tolerance of 500V, a maximum gate-source voltage of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate voltage of 10V, its on-resistance (RDS(ON)) is 140mΩ and its rated current is 30A. The use of **SJ_Multi-EPI** technology helps to improve switching efficiency and reduce switching losses, making it perform well in the field of power conversion. This model is particularly suitable for applications such as high-frequency switching power supplies, DC-DC converters, and electric vehicles (EVs).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ (VGS=10V)
- **Maximum drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI (Super Junction Multi-EPI technology)
- **Maximum power consumption**: Depending on the specific use environment, the maximum power consumption is determined by VDS, ID and RDS(ON).
- **Switching speed**: Suitable for high-frequency switching applications, with low switching losses and fast response speed.
- **Operating temperature range**: -55°C to +150°C
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ (VGS=10V)
- **Maximum drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI (Super Junction Multi-EPI technology)
- **Maximum power consumption**: Depending on the specific use environment, the maximum power consumption is determined by VDS, ID and RDS(ON).
- **Switching speed**: Suitable for high-frequency switching applications, with low switching losses and fast response speed.
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples:
1. **High-frequency switching power supply (SMPS)**:
- SQM18N33-160H-GE3-VB is widely used in high-frequency switching power supplies, especially in DC-DC converters. Its high voltage resistance and low on-resistance enable it to perform well in situations where high conversion efficiency is required, supporting an operating voltage of up to 500V to meet high power conversion needs.
2. **Electric vehicle (EV) battery management system**:
- In the battery management system (BMS) of electric vehicles, SQM18N33-160H-GE3-VB can be used in DC-DC buck-boost converters to help achieve stable battery voltage regulation. Due to its high current carrying capacity and low RDS(ON), this MOSFET can provide efficient power transmission and reduce energy loss during battery charging and discharging.
3. **Photovoltaic inverter**:
- In photovoltaic inverters, this MOSFET can be used for efficient current switching and power conversion. Photovoltaic inverters require high-voltage, low-loss power switching devices. The characteristics of SQM18N33-160H-GE3-VB make it very suitable for use in the process of converting DC power into AC power, ensuring high efficiency and long-term stable operation of the system.
4. **Industrial control and automation**:
- SQM18N33-160H-GE3-VB is also suitable for various industrial control systems, especially those that require high current and high voltage, such as motor drives, industrial power supplies, and high-power switching power supply systems. In these applications, the low on-resistance of MOSFET can greatly improve the efficiency and reliability of the system.
5. **Switching power supply module (SMPS) and power management system**:
- This MOSFET is also suitable for power management systems in consumer electronic products, such as battery chargers, adapters and other applications. It can effectively handle high current and high power switching processes to ensure that the product works efficiently and stably.
From these application examples, we can see that SQM18N33-160H-GE3-VB is a MOSFET that is very suitable for high power and high efficiency requirements, and provides excellent performance in a variety of fields.
1. **High-frequency switching power supply (SMPS)**:
- SQM18N33-160H-GE3-VB is widely used in high-frequency switching power supplies, especially in DC-DC converters. Its high voltage resistance and low on-resistance enable it to perform well in situations where high conversion efficiency is required, supporting an operating voltage of up to 500V to meet high power conversion needs.
2. **Electric vehicle (EV) battery management system**:
- In the battery management system (BMS) of electric vehicles, SQM18N33-160H-GE3-VB can be used in DC-DC buck-boost converters to help achieve stable battery voltage regulation. Due to its high current carrying capacity and low RDS(ON), this MOSFET can provide efficient power transmission and reduce energy loss during battery charging and discharging.
3. **Photovoltaic inverter**:
- In photovoltaic inverters, this MOSFET can be used for efficient current switching and power conversion. Photovoltaic inverters require high-voltage, low-loss power switching devices. The characteristics of SQM18N33-160H-GE3-VB make it very suitable for use in the process of converting DC power into AC power, ensuring high efficiency and long-term stable operation of the system.
4. **Industrial control and automation**:
- SQM18N33-160H-GE3-VB is also suitable for various industrial control systems, especially those that require high current and high voltage, such as motor drives, industrial power supplies, and high-power switching power supply systems. In these applications, the low on-resistance of MOSFET can greatly improve the efficiency and reliability of the system.
5. **Switching power supply module (SMPS) and power management system**:
- This MOSFET is also suitable for power management systems in consumer electronic products, such as battery chargers, adapters and other applications. It can effectively handle high current and high power switching processes to ensure that the product works efficiently and stably.
From these application examples, we can see that SQM18N33-160H-GE3-VB is a MOSFET that is very suitable for high power and high efficiency requirements, and provides excellent performance in a variety of fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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