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SQM120P06-07L-GE3-VB Product details
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Product Introduction: SQM120P06-07L-GE3-VB
SQM120P06-07L-GE3-VB is a unipolar P-channel MOSFET in TO263 package. It is designed for high current and high-efficiency switching applications, with excellent conduction performance and low switching losses. This MOSFET supports a maximum drain-to-source voltage (V_DS) of 60V and can carry a maximum drain current (I_D) of 120A. Manufactured using Trench technology, it can provide extremely low on-resistance (R_DS(ON)) - 5mΩ at V_GS=10V and 7mΩ at V_GS=4.5V, which makes it very suitable for high-efficiency, low-power switching power supply design, load switching, and circuits requiring high-speed switching.
SQM120P06-07L-GE3-VB is a unipolar P-channel MOSFET in TO263 package. It is designed for high current and high-efficiency switching applications, with excellent conduction performance and low switching losses. This MOSFET supports a maximum drain-to-source voltage (V_DS) of 60V and can carry a maximum drain current (I_D) of 120A. Manufactured using Trench technology, it can provide extremely low on-resistance (R_DS(ON)) - 5mΩ at V_GS=10V and 7mΩ at V_GS=4.5V, which makes it very suitable for high-efficiency, low-power switching power supply design, load switching, and circuits requiring high-speed switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Model**: SQM120P06-07L-GE3-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain to source voltage (V_DS)**: -60V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -3V
- **On-resistance (R_DS(ON))**:
- 7mΩ (V_GS = 4.5V)
- 5mΩ (V_GS = 10V)
- **Drain current (I_D)**: -120A
- **Technology**: Trench technology
- **Maximum power consumption (P_d)**: Depending on the specific application environment, please refer to the typical value provided by the manufacturer
- **Operating temperature range (T_j)**: -55°C to +150°C
- **Model**: SQM120P06-07L-GE3-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain to source voltage (V_DS)**: -60V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -3V
- **On-resistance (R_DS(ON))**:
- 7mΩ (V_GS = 4.5V)
- 5mΩ (V_GS = 10V)
- **Drain current (I_D)**: -120A
- **Technology**: Trench technology
- **Maximum power consumption (P_d)**: Depending on the specific application environment, please refer to the typical value provided by the manufacturer
- **Operating temperature range (T_j)**: -55°C to +150°C
Domain and module applications：
Application areas and modules:
1. **High-efficiency switching power supply**
In high-efficiency power management systems, the low R_DS(ON) value of the SQM120P06-07L-GE3-VB MOSFET makes it an ideal choice for power converters, DC-DC converters, and battery management systems. It can switch efficiently at high frequencies, significantly reducing power losses and improving overall system efficiency.
2. **Electric vehicle (EV) drive system**
The motor drive system of an electric vehicle requires fast switching and high current capabilities. The low on-resistance and high current carrying capacity of the SQM120P06-07L-GE3-VB make it suitable for battery management, inverters, and motor control systems in electric vehicles. It can effectively reduce power consumption and improve the efficiency and stability of the drive system.
3. **Industrial Automation and Power Modules**
In industrial automation and power conversion systems, the SQM120P06-07L-GE3-VB can be used as a load switch, providing faster response and lower switching losses. This MOSFET is suitable for various power modules such as inverters, rectifiers and inverter power supplies, especially in environments that require low heat generation and high reliability.
4. **Solar Inverter**
In solar inverter systems, the SQM120P06-07L-GE3-VB can be used as a switching element to efficiently manage DC to AC conversion. Low R_DS(ON) helps reduce the power loss of the system and enhances the overall performance of the inverter.
5. **Power Adapter and Battery Charger**
The low on-resistance and high current capability of SQM120P06-07L-GE3-VB make it suitable for high-performance power adapters and battery chargers, especially in devices that require fast and reliable charging, such as portable electronic devices, power tools, etc.
Through these applications, we can see that SQM120P06-07L-GE3-VB MOSFET plays an important role in high-performance, low-power, high-current applications, and is particularly suitable for power electronic systems with strict requirements on switching speed, efficiency and power consumption.
1. **High-efficiency switching power supply**
In high-efficiency power management systems, the low R_DS(ON) value of the SQM120P06-07L-GE3-VB MOSFET makes it an ideal choice for power converters, DC-DC converters, and battery management systems. It can switch efficiently at high frequencies, significantly reducing power losses and improving overall system efficiency.
2. **Electric vehicle (EV) drive system**
The motor drive system of an electric vehicle requires fast switching and high current capabilities. The low on-resistance and high current carrying capacity of the SQM120P06-07L-GE3-VB make it suitable for battery management, inverters, and motor control systems in electric vehicles. It can effectively reduce power consumption and improve the efficiency and stability of the drive system.
3. **Industrial Automation and Power Modules**
In industrial automation and power conversion systems, the SQM120P06-07L-GE3-VB can be used as a load switch, providing faster response and lower switching losses. This MOSFET is suitable for various power modules such as inverters, rectifiers and inverter power supplies, especially in environments that require low heat generation and high reliability.
4. **Solar Inverter**
In solar inverter systems, the SQM120P06-07L-GE3-VB can be used as a switching element to efficiently manage DC to AC conversion. Low R_DS(ON) helps reduce the power loss of the system and enhances the overall performance of the inverter.
5. **Power Adapter and Battery Charger**
The low on-resistance and high current capability of SQM120P06-07L-GE3-VB make it suitable for high-performance power adapters and battery chargers, especially in devices that require fast and reliable charging, such as portable electronic devices, power tools, etc.
Through these applications, we can see that SQM120P06-07L-GE3-VB MOSFET plays an important role in high-performance, low-power, high-current applications, and is particularly suitable for power electronic systems with strict requirements on switching speed, efficiency and power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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