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SQM120P04-04L-GE3-VB Product details
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SQM120P04-04L-GE3-VB MOSFET Product Introduction
SQM120P04-04L-GE3-VB is a high-performance **unipolar P-type MOSFET**, which adopts **TO263** package and is designed for high-efficiency switching applications. This model has a low **on-resistance (RDS(ON))** and a high **current carrying capacity**, making it an ideal choice for high-efficiency power conversion and power management applications. Its **VDS** is -40V, and it can operate stably at relatively high voltages. Its **VGS** can withstand ±20V, which is suitable for a variety of voltage control applications. This MOSFET adopts **Trench** technology, has excellent conduction performance and low conduction loss, and can effectively improve power efficiency, especially in high current and high-frequency switching environments.
SQM120P04-04L-GE3-VB is a high-performance **unipolar P-type MOSFET**, which adopts **TO263** package and is designed for high-efficiency switching applications. This model has a low **on-resistance (RDS(ON))** and a high **current carrying capacity**, making it an ideal choice for high-efficiency power conversion and power management applications. Its **VDS** is -40V, and it can operate stably at relatively high voltages. Its **VGS** can withstand ±20V, which is suitable for a variety of voltage control applications. This MOSFET adopts **Trench** technology, has excellent conduction performance and low conduction loss, and can effectively improve power efficiency, especially in high current and high-frequency switching environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
SQM120P04-04L-GE3-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS = 4.5V
- 4.1mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -110A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS = 4.5V
- 4.1mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -110A
- **Technology**: Trench technology
Domain and module applications：
SQM120P04-04L-GE3-VB MOSFET Applications and Module Examples
1. **Power Management**:
- **Power Converter**: Due to its very low RDS(ON) value, this MOSFET can be used as a switching element in power converters to provide efficient current control and reduce power consumption. It is particularly suitable for DC-DC converters, especially under high loads, and can effectively reduce switching losses.
2. **Electric Vehicle Charging System**:
- In the battery management system (BMS) and charging module of electric vehicles, this MOSFET can be used for charging current control. Its low RDS(ON) makes the charging process less loss, thereby improving the overall efficiency.
3. **Battery Management and Load Switching**:
- In intelligent battery management systems, this MOSFET can be used for load switching and battery isolation. Due to its low on-resistance, it can ensure efficient operation of the battery during charging and discharging.
4. **High-efficiency motor drive**:
- In industrial and consumer electronics, in high-efficiency motor drive applications, the SQM120P04-04L-GE3-VB can handle higher currents and provide low-loss switching control, which is suitable for motor drive power modules.
5. **High-frequency switching power supply**:
- This MOSFET is also widely used in high-frequency switching power supplies. Due to its lower RDS(ON) and higher ID capability, it can work stably at high frequencies, especially suitable for fast switching power modules.
1. **Power Management**:
- **Power Converter**: Due to its very low RDS(ON) value, this MOSFET can be used as a switching element in power converters to provide efficient current control and reduce power consumption. It is particularly suitable for DC-DC converters, especially under high loads, and can effectively reduce switching losses.
2. **Electric Vehicle Charging System**:
- In the battery management system (BMS) and charging module of electric vehicles, this MOSFET can be used for charging current control. Its low RDS(ON) makes the charging process less loss, thereby improving the overall efficiency.
3. **Battery Management and Load Switching**:
- In intelligent battery management systems, this MOSFET can be used for load switching and battery isolation. Due to its low on-resistance, it can ensure efficient operation of the battery during charging and discharging.
4. **High-efficiency motor drive**:
- In industrial and consumer electronics, in high-efficiency motor drive applications, the SQM120P04-04L-GE3-VB can handle higher currents and provide low-loss switching control, which is suitable for motor drive power modules.
5. **High-frequency switching power supply**:
- This MOSFET is also widely used in high-frequency switching power supplies. Due to its lower RDS(ON) and higher ID capability, it can work stably at high frequencies, especially suitable for fast switching power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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