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SQM120N04-2m1-GE3-VB Product details
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1. **SQM120N04-2m1-GE3 Product Introduction**
SQM120N04-2m1-GE3 is a high-performance single N-channel MOSFET in TO263 package, suitable for various high-power and high-efficiency power supply applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum drain current (ID) is 280A, and it has extremely low on-resistance (RDS(ON) is 1.68mΩ @ VGS = 4.5V and 1.4mΩ @ VGS = 10V). These features make it particularly suitable for high-current, high-voltage power management and load control applications, such as power converters, DC-DC converters, and high-efficiency power systems. SQM120N04-2m1-GE3 uses Trench technology, which has the characteristics of low loss and high efficiency, which can help the system reduce heat generation and improve work efficiency. Its low on-resistance, fast switching response and excellent current carrying capability make it very popular in high-power power supply applications and electric drive systems.
SQM120N04-2m1-GE3 is a high-performance single N-channel MOSFET in TO263 package, suitable for various high-power and high-efficiency power supply applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum drain current (ID) is 280A, and it has extremely low on-resistance (RDS(ON) is 1.68mΩ @ VGS = 4.5V and 1.4mΩ @ VGS = 10V). These features make it particularly suitable for high-current, high-voltage power management and load control applications, such as power converters, DC-DC converters, and high-efficiency power systems. SQM120N04-2m1-GE3 uses Trench technology, which has the characteristics of low loss and high efficiency, which can help the system reduce heat generation and improve work efficiency. Its low on-resistance, fast switching response and excellent current carrying capability make it very popular in high-power power supply applications and electric drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **SQM120N04-2m1-GE3 Detailed Parameters**
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 40V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 1.68mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 280A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**:
- Low on-resistance
- High current carrying capacity
- Fast switching response
- Low power consumption, suitable for high-performance applications
- **Applicable voltage range**: Suitable for high voltage power management, battery-driven systems and high-power load switching
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 40V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 1.68mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 280A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**:
- Low on-resistance
- High current carrying capacity
- Fast switching response
- Low power consumption, suitable for high-performance applications
- **Applicable voltage range**: Suitable for high voltage power management, battery-driven systems and high-power load switching
Domain and module applications：
3. **Application fields and module examples of SQM120N04-2m1-GE3**
- **Power Management**:
SQM120N04-2m1-GE3 performs well in high voltage power management applications, especially for DC-DC converters, DC power regulators and various power conditioning modules. Due to its ultra-low on-resistance and high current carrying capacity, SQM120N04-2m1-GE3 can significantly reduce energy loss and heat generation, improve power efficiency, and is suitable for efficient power management systems such as industrial power supplies, consumer appliances, communication equipment and data centers.
- **Electric Drive Systems**:
In electric drive systems (such as power tools, electric vehicles and robot control systems), SQM120N04-2m1-GE3 can be used as an efficient switching element to control the start, run and stop of the motor. The low on-resistance of this MOSFET enables it to provide higher current carrying capacity and lower energy loss, ensuring the stability and efficiency of the electric drive system under high power.
- **Battery Management Systems**:
In the battery management system, SQM120N04-2m1-GE3 can be used for battery charging and discharging control to ensure efficient operation of the battery under high load. This MOSFET can still maintain stable operation under high current and high voltage environments, which can improve the efficiency and safety of battery management systems and is suitable for electric vehicles (EV), energy storage systems and high-power equipment.
- **High Power Switching Applications**:
SQM120N04-2m1-GE3 is also suitable for applications that require fast switching and high power conversion, such as efficient power inverters, power conditioners, etc. Due to its low on-resistance and extremely high current handling capability, it can perform efficient switching operations under high load environments and is widely used in power conversion equipment and industrial automation.
- **LED Drivers and Lighting**:
This MOSFET is suitable for LED driver circuits and lighting control systems. Due to its low RDS(ON) value, it can regulate LED current with lower losses and higher efficiency, extend the service life of LED lamps and improve energy efficiency. Especially in smart lighting and high-efficiency lighting systems, the SQM120N04-2m1-GE3 can provide stable current control to ensure the stability and reliability of the light source.
- **Power Regulators**:
The SQM120N04-2m1-GE3 is suitable for various power regulators and converters, and can be seen in industrial power supplies, consumer electronics, and communication base stations. Its low on-resistance and high-speed switching capability enable it to effectively control current, thereby achieving precise voltage regulation and efficient power conversion, reducing system energy losses and improving overall performance.
- **Power Management**:
SQM120N04-2m1-GE3 performs well in high voltage power management applications, especially for DC-DC converters, DC power regulators and various power conditioning modules. Due to its ultra-low on-resistance and high current carrying capacity, SQM120N04-2m1-GE3 can significantly reduce energy loss and heat generation, improve power efficiency, and is suitable for efficient power management systems such as industrial power supplies, consumer appliances, communication equipment and data centers.
- **Electric Drive Systems**:
In electric drive systems (such as power tools, electric vehicles and robot control systems), SQM120N04-2m1-GE3 can be used as an efficient switching element to control the start, run and stop of the motor. The low on-resistance of this MOSFET enables it to provide higher current carrying capacity and lower energy loss, ensuring the stability and efficiency of the electric drive system under high power.
- **Battery Management Systems**:
In the battery management system, SQM120N04-2m1-GE3 can be used for battery charging and discharging control to ensure efficient operation of the battery under high load. This MOSFET can still maintain stable operation under high current and high voltage environments, which can improve the efficiency and safety of battery management systems and is suitable for electric vehicles (EV), energy storage systems and high-power equipment.
- **High Power Switching Applications**:
SQM120N04-2m1-GE3 is also suitable for applications that require fast switching and high power conversion, such as efficient power inverters, power conditioners, etc. Due to its low on-resistance and extremely high current handling capability, it can perform efficient switching operations under high load environments and is widely used in power conversion equipment and industrial automation.
- **LED Drivers and Lighting**:
This MOSFET is suitable for LED driver circuits and lighting control systems. Due to its low RDS(ON) value, it can regulate LED current with lower losses and higher efficiency, extend the service life of LED lamps and improve energy efficiency. Especially in smart lighting and high-efficiency lighting systems, the SQM120N04-2m1-GE3 can provide stable current control to ensure the stability and reliability of the light source.
- **Power Regulators**:
The SQM120N04-2m1-GE3 is suitable for various power regulators and converters, and can be seen in industrial power supplies, consumer electronics, and communication base stations. Its low on-resistance and high-speed switching capability enable it to effectively control current, thereby achieving precise voltage regulation and efficient power conversion, reducing system energy losses and improving overall performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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